Inventor · disambiguated record
David J. Howard
Also filed as: HOWARD DAVID · HOWARD DAVID J · HOWARD DAVID JOHN
135 granted patents·4 pending applications·849 citations·filing 1978–2024
99Inventor score
Top patents by PatentIndex Score
139 records- 0199US10529922B1Substrates and heat spreaders for heat management and RF isolation in integrated semiconductor devices having phase-change material (PCM) radio frequency (RF) switchesNEWPORT FAB LLC·Filed 2019·Granted Jan 7, 2020·45 cites·19 claims
- 0299US9917104B1Hybrid MOS-PCM CMOS SOI switchTOWER SEMICONDUCTOR LTD·Filed 2017·Granted Mar 13, 2018·89 cites·19 claims
- 0398US10461253B1High reliability RF switch based on phase-change materialNEWPORT FAB LLC·Filed 2018·Granted Oct 29, 2019·36 cites·15 claims
- 0495US11031555B2Power handling improvements for phase-change material (PCM) radio frequency (RF) switch circuitsNEWPORT FAB LLC·Filed 2020·Granted Jun 8, 2021·3 cites·20 claims
- 0592US10454027B1Phase-change material (PCM) radio frequency (RF) switches with stressor layers and contact adhesion layersNEWPORT FAB LLC·Filed 2019·Granted Oct 22, 2019·6 cites·20 claims
- 0692US7589009B1Method for fabricating a top conductive layer in a semiconductor die and related structureNEWPORT FAB LLC·Filed 2006·Granted Sep 15, 2009·21 cites·20 claims
- 0790US9154219B2Communication for implantable medical devicesGREATBATCH LTD·Filed 2015·Granted Oct 6, 2015·12 cites·20 claims
- 0889US11276682B1Nickel silicide in bipolar complementary-metal-oxide-semiconductor (BiCMOS) device and method of manufacturingNEWPORT FAB LLC·Filed 2020·Granted Mar 15, 2022·2 cites·20 claims
- 0988US9887123B2Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related methodNEWPORT FAB LLC·Filed 2015·Granted Feb 6, 2018·5 cites·13 claims
- 1088US6680521B1High density composite MIM capacitor with reduced voltage dependence in semiconductor diesNEWPORT FAB LLC·Filed 2003·Granted Jan 20, 2004·46 cites·13 claims
- 1187US6417755B1Method for fabrication of high inductance inductors and related structureCONEXANT SYSTEMS INC·Filed 2000·Granted Jul 9, 2002·33 cites·20 claims
- 1285US10916540B2Device including PCM RF switch integrated with group III-V semiconductorsNEWPORT FAB LLC·Filed 2018·Granted Feb 9, 2021·4 cites·26 claims
- 1385US10476001B1Manufacturing RF switch based on phase-change materialNEWPORT FAB LLC·Filed 2018·Granted Nov 12, 2019·3 cites·19 claims
- 1485US9782587B2Digital control for pulse generatorsNUVECTRA CORP·Filed 2013·Granted Oct 10, 2017·21 cites·17 claims
- 1585US7897484B2Fabricating a top conductive layer in a semiconductor dieNEWPORT FAB LLC·Filed 2009·Granted Mar 1, 2011·9 cites·19 claims
- 1685US6459352B1On-chip transformersSKYWORKS SOLUTIONS INC·Filed 2001·Granted Oct 1, 2002·30 cites·19 claims
- 1784US7772673B1Deep trench isolation and method for forming sameNEWPORT FAB LLC·Filed 2007·Granted Aug 10, 2010·12 cites·17 claims
- 1883US10062644B2Copper interconnect for improving radio frequency (RF) silicon-on-insulator (SOI) switch field effect transistor (FET) stacksNEWPORT FAB LLC·Filed 2016·Granted Aug 28, 2018·4 cites·17 claims
- 1983US7704874B1Method for fabricating a frontside through-wafer via in a processed wafer and related structureNEWPORT FAB LLC·Filed 2006·Granted Apr 27, 2010·9 cites·19 claims
- 2083US7093247B2Installation of a data processing solutionIBM·Filed 2001·Granted Aug 15, 2006·52 cites·14 claims
- 2183US6885056B1High-k dielectric stack in a MIM capacitor and method for its fabricationNEWPORT FAB LLC·Filed 2003·Granted Apr 26, 2005·34 cites·20 claims
- 2282US10062636B2Integration of thermally conductive but electrically isolating layers with semiconductor devicesNEWPORT FAB LLC·Filed 2016·Granted Aug 28, 2018·3 cites·12 claims
- 2382US9984269B1Fingerprint sensor with direct recording to non-volatile memoryTOWER SEMICONDUCTOR LTD·Filed 2017·Granted May 29, 2018·5 cites·21 claims
- 2482US8598713B2Deep silicon via for grounding of circuits and devices, emitter ballasting and isolationBLASCHKE VOLKER·Filed 2010·Granted Dec 3, 2013·7 cites·20 claims
- 2582US6143578AMethod and apparatus for wash, resuspension, recollection and localization of magnetizable particles in assays using magnetic separation technologyBAYER AG·Filed 1998·Granted Nov 7, 2000·110 cites·5 claims
- 2681US10937960B2Concurrent fabrication of and structure for capacitive terminals and ohmic terminals in a phase-change material (PCM) radio frequency (RF) switchNEWPORT FAB LLC·Filed 2019·Granted Mar 2, 2021·2 cites·19 claims
- 2781US9755063B1RF SOI switches including low dielectric constant features between metal line structuresNEWPORT FAB LLC·Filed 2016·Granted Sep 5, 2017·4 cites·13 claims
- 2881US8212331B1Method for fabricating a backside through-wafer via in a processed wafer and related structureKAR-ROY ARJUN·Filed 2007·Granted Jul 3, 2012·8 cites·18 claims
- 2981US6396122B1Method for fabricating on-chip inductors and related structureNEWPORT FAB LLC·Filed 2000·Granted May 28, 2002·32 cites·24 claims
- 3080US10833261B2Phase-change material (PCM) RF switch with top metal contact to heating elementNEWPORT FAB LLC·Filed 2019·Granted Nov 10, 2020·1 cites·20 claims
- 3180US10566321B1Wafer-to-wafer and die-to-wafer bonding of phase-change material (PCM) switches with integrated circuits and bonded two-die devicesNEWPORT FAB LLC·Filed 2019·Granted Feb 18, 2020·2 cites·24 claims
- 3280US9966301B2Reduced substrate effects in monolithically integrated RF circuitsNEWPORT FAB LLC·Filed 2016·Granted May 8, 2018·3 cites·19 claims
- 3379US10475993B1PCM RF switch fabrication with subtractively formed heaterNEWPORT FAB LLC·Filed 2018·Granted Nov 12, 2019·2 cites·20 claims
- 3479US9346669B2Robust MEMS structure with via cap and related methodNEWPORT FAB·Filed 2015·Granted May 24, 2016·3 cites·20 claims
- 3578US10566528B1Heating element designs for phase-change material (PCM) radio frequency (RF) switchesNEWPORT FAB LLC·Filed 2018·Granted Feb 18, 2020·2 cites·20 claims
- 3678US7041569B1Method for fabricating a high density composite MIM capacitor with reduced voltage dependence in semiconductor diesNEWPORT FAB LLC·Filed 2003·Granted May 9, 2006·22 cites·9 claims
- 3776US8212351B1Structure for encapsulating microelectronic devicesDEBAR MICHAEL J·Filed 2006·Granted Jul 3, 2012·8 cites·13 claims
- 3873US11164740B2Semiconductor structure having porous semiconductor layer for RF devicesNEWPORT FAB LLC·Filed 2019·Granted Nov 2, 2021·1 cites·20 claims
- 3973US10991631B2High performance SiGe heterojunction bipolar transistors built on thin-film silicon-on-insulator substrates for radio frequency applicationsNEWPORT FAB LLC·Filed 2018·Granted Apr 27, 2021·1 cites·18 claims
- 4073US10862032B2Phase-change material (PCM) radio frequency (RF) switchNEWPORT FAB LLC·Filed 2019·Granted Dec 8, 2020·1 cites·20 claims
- 4173US10741758B2Width-wise segmented slot contacts for improving performance in phase-change material (PCM) radio frequency (RF) switchesNEWPORT FAB LLC·Filed 2020·Granted Aug 11, 2020·0 cites·20 claims
- 4272US12324226B2Method of manufacturing bipolar complementary-metal-oxide-semiconductor (BiCMOS) devices using nickel silicideNEWPORT FAB LLC·Filed 2021·Granted Jun 3, 2025·0 cites·16 claims
- 4372US12199090B2Method of manufacturing nickel silicide in bipolar complementary-metal-oxide-semiconductor (BiCMOS)NEWPORT FAB LLC·Filed 2021·Granted Jan 14, 2025·0 cites·15 claims
- 4472US10707414B2Uniform plate slot contacts for improving performance in phase-change material (PCM) radio frequency (RF) switchesNEWPORT FAB LLC·Filed 2019·Granted Jul 7, 2020·0 cites·20 claims
- 4572US10622560B2Semiconductor chips and systems having phase-change material (PCM) switches integrated with micro-electrical-mechanical systems (MEMS) and/or resonatorsNEWPORT FAB LLC·Filed 2019·Granted Apr 14, 2020·1 cites·17 claims
- 4671US11088322B2Capacitive and ohmic terminals in a phase-change material (PCM) radio frequency (RF) switchNEWPORT FAB LLC·Filed 2020·Granted Aug 10, 2021·0 cites·20 claims
- 4771US11050022B2Radio frequency (RF) switches having phase-change material (PCM) and heat management for increased manufacturability and performanceNEWPORT FAB LLC·Filed 2019·Granted Jun 29, 2021·1 cites·20 claims
- 4871US10644235B2Phase-change material (PCM) radio frequency (RF) switch with reduced parasitic capacitanceNEWPORT FAB LLC·Filed 2018·Granted May 5, 2020·1 cites·20 claims
- 4971US10615071B2Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related methodNEWPORT FAB LLC·Filed 2017·Granted Apr 7, 2020·1 cites·12 claims
- 5070US10916585B2Stacked phase-change material (PCM) radio frequency (RF) switches with improved RF power handlingNEWPORT FAB LLC·Filed 2018·Granted Feb 9, 2021·1 cites·24 claims
Showing the top 50 of 139 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →