Inventor · disambiguated record
Dai Iwata
Also filed as: IWATA DAI
10 granted patents·4 pending applications·61 citations·filing 2015–2024
84Inventor score
Top patents by PatentIndex Score
14 records- 0196US9991280B2Multi-tier three-dimensional memory devices containing annular dielectric spacers within memory openings and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jun 5, 2018·40 cites·15 claims
- 0295US10770459B2CMOS devices containing asymmetric contact via structuresSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Sep 8, 2020·14 cites·13 claims
- 0393US11322597B2Gate material-based capacitor and resistor structures and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 3, 2022·3 cites·20 claims
- 0486US12027520B2Transistor circuits including fringeless transistors and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jul 2, 2024·2 cites·12 claims
- 0574US9443862B1Select gates with select gate dielectric firstSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 13, 2016·2 cites·20 claims
- 0661US2024258317A1Transistor circuits including fringeless transistors and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 0759US10748919B2Multi-tier three-dimensional memory devices containing annular dielectric spacers within memory openings and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 18, 2020·0 cites·19 claims
- 0858US2024147730A1Transistor circuits including fringeless transistors and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 0956US2024063278A1Transistor circuits including fringeless transistors and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 1055US2025040239A1High voltage field effect transistors with different sidewall spacer configurations and method of making the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 1149US12094944B2Transistor circuits including fringeless transistors and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Sep 17, 2024·0 cites·10 claims
- 1248US11837601B2Transistor circuits including fringeless transistors and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Dec 5, 2023·0 cites·12 claims
- 1348US11626397B2Gate material-based capacitor and resistor structures and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 11, 2023·0 cites·20 claims
- 1443US9613971B2Select gates with central open areasSANDISK TECHNOLOGIES LLC·Filed 2015·Granted Apr 4, 2017·0 cites·16 claims
Join the waitlist — get patent alerts
Get an alert when Dai Iwata files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →