Inventor · disambiguated record
David Y. Kao
Also filed as: KAO DAVID · KAO DAVID T · KAO DAVID Y
48 granted patents·6 pending applications·1,031 citations·filing 1995–2021
99Inventor score
Top patents by PatentIndex Score
54 records- 0193US6011307AAnisotropic conductive interconnect material for electronic devices, method of use and resulting productMICRON TECHNOLOGY INC·Filed 1997·Granted Jan 4, 2000·155 cites·38 claims
- 0292US9106222B2On-die system and method for controlling termination impedance of memory device data bus terminalsMICRON TECHNOLOGY INC·Filed 2013·Granted Aug 11, 2015·12 cites·23 claims
- 0392US5714786ATransistors having controlled conductive spacers, uses of such transistors and methods of making such transistorsMICRON TECHNOLOGY INC·Filed 1996·Granted Feb 3, 1998·74 cites·14 claims
- 0491US6090693ATransistors having controlled conductive spacers, uses of such transistors and methods of making such transistorsMICRON TECHNOLOGY INC·Filed 1999·Granted Jul 18, 2000·64 cites·14 claims
- 0589US7852112B2On-die system and method for controlling termination impedance of memory device data bus terminalsMICRON TECHNOLOGY INC·Filed 2009·Granted Dec 14, 2010·13 cites·19 claims
- 0689US7646213B2On-die system and method for controlling termination impedance of memory device data bus terminalsMICRON TECHNOLOGY INC·Filed 2007·Granted Jan 12, 2010·15 cites·17 claims
- 0788US8446167B2On-die system and method for controlling termination impedance of memory device data bus terminalsKAO DAVID·Filed 2010·Granted May 21, 2013·13 cites·17 claims
- 0888US5854501AFloating gate semiconductor device having a portion formed with a recessMICRON TECHNOLOGY INC·Filed 1995·Granted Dec 29, 1998·69 cites·12 claims
- 0987US6740821B1Selectively configurable circuit boardMICRON TECHNOLOGY INC·Filed 2002·Granted May 25, 2004·29 cites·10 claims
- 1087US6005273ATransistors having controlled conductive spacers, uses of such transistors and methods of making such transistorsMICRON TECHNOLOGY INC·Filed 1997·Granted Dec 21, 1999·49 cites·12 claims
- 1184US5688700AMethod of forming a field effect transistorMICRON TECHNOLOGY INC·Filed 1995·Granted Nov 18, 1997·54 cites·22 claims
- 1283US7005710B1Transistors having controlled conductive spacers, uses of such transistors and methods of making such transistorsMICRON TECHNOLOGY INC·Filed 1999·Granted Feb 28, 2006·39 cites·7 claims
- 1381US6184086B1Method for forming a floating gate semiconductor device having a portion within a recessMICRON TECHNOLOGY INC·Filed 1998·Granted Feb 6, 2001·43 cites·10 claims
- 1481US5912840AMemory cell architecture utilizing a transistor having a dual access gateMICRON TECHNOLOGY INC·Filed 1997·Granted Jun 15, 1999·44 cites·38 claims
- 1579US5811338AMethod of making an asymmetric transistorMICRON TECHNOLOGY INC·Filed 1996·Granted Sep 22, 1998·31 cites·1 claims
- 1678US6602750B2Container structure for floating gate memory device and method for forming sameMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 5, 2003·20 cites·20 claims
- 1777US5905280ACapacitor structures, DRAM cell structures, methods of forming capacitors, methods of forming DRAM cells, and integrated circuits incorporating capacitor structures and DRAM cell structuresMICRON TECHNOLOGY INC·Filed 1997·Granted May 18, 1999·38 cites·12 claims
- 1873US7151659B2Gapped-plate capacitorMICRON TECHNOLOGY INC·Filed 2005·Granted Dec 19, 2006·3 cites·3 claims
- 1973US6781212B1Selectively doped trench device isolationMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 24, 2004·33 cites·34 claims
- 2073US6175129B1Capacitor structures, DRAM cell structures, methods of forming capacitors, methods of forming DRAM cells, and integrated circuits incorporating capacitor structures and DRAM cell structuresMICRON TECHNOLOGY INC·Filed 1999·Granted Jan 16, 2001·31 cites·12 claims
- 2172US5763916AStructure and method for improved storage node isolationMICRON TECHNOLOGY INC·Filed 1996·Granted Jun 9, 1998·20 cites·23 claims
- 2270US6144068ATransistor device structures, and methods for forming such structuresMICRON TECHNOLOGY INC·Filed 1999·Granted Nov 7, 2000·20 cites·18 claims
- 2369US6323514B1Container structure for floating gate memory device and method for forming sameMICRON TECHNOLOGY INC·Filed 1999·Granted Nov 27, 2001·23 cites·5 claims
- 2466US6936775B2Selectively configurable circuit boardMICRON TECHNOLOGY INC·Filed 2004·Granted Aug 30, 2005·8 cites·25 claims
- 2563US6414869B1Quad in-line memory moduleMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 2, 2002·8 cites·11 claims
- 2661US6124167AMethod for forming an etch mask during the manufacture of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1999·Granted Sep 26, 2000·19 cites·19 claims
- 2759US6713348B2Method for forming an etch mask during the manufacture of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 30, 2004·5 cites·14 claims
- 2856US6774421B2Gapped-plate capacitorMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 10, 2004·4 cites·2 claims
- 2954US6465314B1Semiconductor processing methodsMICRON TECHNOLOGY INC·Filed 2000·Granted Oct 15, 2002·3 cites·12 claims
- 3052US6498363B1Gapped-plate capacitorMICRON TECHNOLOGY INC·Filed 2000·Granted Dec 24, 2002·3 cites·1 claims
- 3152US6288885B1Method and apparatus for electrostatic discharge protection for printed circuit boardsMICRON TECHNOLOGY INC·Filed 1999·Granted Sep 11, 2001·14 cites·27 claims
- 3251US7259442B2Selectively doped trench device isolationMICRON TECHNOLOGY INC·Filed 2004·Granted Aug 21, 2007·3 cites·9 claims
- 3351US2005258535A1Selectively configurable circuit boardMICRON TECHNOLOGY INC·Filed 2005·Application pending·0 cites
- 3449US2007058325A1Gapped-plate capacitorMICRON TECHNOLOGY INC·Filed 2006·Application pending·0 cites
- 3549US2006220109A1Selectively doped trench device isolationKAO DAVID Y·Filed 2006·Application pending·0 cites
- 3648US6479861B1Method for forming an etch mask during the manufacture of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 12, 2002·1 cites·8 claims
- 3748US2023145114A1Memory system directed memory address management techniquesMICRON TECHNOLOGY INC·Filed 2021·Application pending·0 cites
- 3847US6177328B1Methods of forming capacitors methods of forming DRAM cells, and integrated circuits incorporating structures and DRAM cell structuresMICRON TECHNOLOGY INC·Filed 1998·Granted Jan 23, 2001·9 cites·26 claims
- 3947US6124173AMethod for improved storage node isolationMICRON TECHNOLOGY INC·Filed 1997·Granted Sep 26, 2000·6 cites·22 claims
- 4047US6018175AGapped-plate capacitorMICRON TECHNOLOGY INC·Filed 1998·Granted Jan 25, 2000·6 cites·3 claims
- 4145US6958901B2Gapped-plate capacitorMICRON TECHNOLOGY INC·Filed 2004·Granted Oct 25, 2005·1 cites·9 claims
- 4245US6063673ATransistor device structures, and methods for forming such structuresMICRON TECHNOLOGY INC·Filed 1998·Granted May 16, 2000·6 cites·12 claims
- 4345US5955760ATransistor device structuresMICRON TECHNOLOGY INC·Filed 1997·Granted Sep 21, 1999·6 cites·11 claims
- 4444US5933738AMethod of forming a field effect transistorMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 3, 1999·7 cites·8 claims
- 4543US6580640B2Non-volatile memory device with tunnel oxideMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 17, 2003·3 cites·40 claims
- 4643US6504211B1Circuit for device isolationMICRON TECHNOLOGY INC·Filed 1998·Granted Jan 7, 2003·4 cites·30 claims
- 4742US6108228AQuad in-line memory moduleMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 22, 2000·7 cites·37 claims
- 4840US6316312B2Capacitor structures, DRAM cell structures, methods of forming capacitors, methods of forming DRAM cells, and integrated circuits incorporating capacitor structures and DRAM cell structuresMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 13, 2001·0 cites·24 claims
- 4938US6316326B1Gapped-plate capacitorMICRON TECHNOLOGY INC·Filed 1999·Granted Nov 13, 2001·3 cites·27 claims
- 5038US6232190B1Method of forming junction diodesMICRON TECHNOLOGY INC·Filed 2000·Granted May 15, 2001·0 cites·25 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →