Inventor · disambiguated record
David L. Kencke
Also filed as: KENCKE DAVID · KENCKE DAVID L
53 granted patents·7 pending applications·730 citations·filing 2000–2023
98Inventor score
Top patents by PatentIndex Score
60 records- 0198US6462984B1Biasing scheme of floating unselected wordlines and bitlines of a diode-based memory arrayINTEL CORP·Filed 2001·Granted Oct 8, 2002·216 cites·20 claims
- 0297US10121792B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2017·Granted Nov 6, 2018·9 cites·1 claims
- 0397US9786667B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2017·Granted Oct 10, 2017·9 cites·20 claims
- 0497US9646970B2Floating body memory cell having gates favoring different conductivity type regionsCHANG PETER L D·Filed 2016·Granted May 9, 2017·9 cites·20 claims
- 0597US9520399B2Floating body memory cell having gates favoring different conductivity type regionsCHANG PETER L D·Filed 2016·Granted Dec 13, 2016·11 cites·16 claims
- 0697US9418997B2Floating body memory cell having gates favoring different conductivity type regionsCHANG PETER L D·Filed 2016·Granted Aug 16, 2016·11 cites·16 claims
- 0797US9275999B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2015·Granted Mar 1, 2016·13 cites·18 claims
- 0897US8980707B2Floating body memory cell having gates favoring different conductivity type regionsCHANG PETER L D·Filed 2013·Granted Mar 17, 2015·19 cites·17 claims
- 0997US8569812B2Floating body memory cell having gates favoring different conductivity type regionsCHANG PETER L D·Filed 2012·Granted Oct 29, 2013·25 cites·4 claims
- 1097US8217435B2Floating body memory cell having gates favoring different conductivity type regionsCHANG PETER L D·Filed 2006·Granted Jul 10, 2012·44 cites·11 claims
- 1197US6313486B1Floating gate transistor having buried strained silicon germanium channel layerUNIV TEXAS·Filed 2000·Granted Nov 6, 2001·145 cites·14 claims
- 1294US10381350B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2018·Granted Aug 13, 2019·4 cites·20 claims
- 1394US8836056B2Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layerOGUZ KAAN·Filed 2012·Granted Sep 16, 2014·18 cites·15 claims
- 1492US10916547B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2020·Granted Feb 9, 2021·2 cites·20 claims
- 1592US9882121B2Techniques for forming spin-transfer torque memory having a dot-contacted free magnetic layerINTEL CORP·Filed 2014·Granted Jan 30, 2018·7 cites·22 claims
- 1692US8786040B2Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form sameDOYLE BRIAN S·Filed 2012·Granted Jul 22, 2014·12 cites·28 claims
- 1792US6313487B1Vertical channel floating gate transistor having silicon germanium channel layerUNIV TEXAS·Filed 2000·Granted Nov 6, 2001·69 cites·20 claims
- 1891US9825095B2Hybrid phase field effect transistorINTEL CORP·Filed 2016·Granted Nov 21, 2017·6 cites·24 claims
- 1990US9455343B2Hybrid phase field effect transistorINTEL CORP·Filed 2013·Granted Sep 27, 2016·9 cites·13 claims
- 2089US10720434B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2019·Granted Jul 21, 2020·2 cites·20 claims
- 2187US9166150B2Electric field enhanced spin transfer torque memory (STTM) deviceDOYLE BRIAN S·Filed 2012·Granted Oct 20, 2015·9 cites·24 claims
- 2286US9735348B2High stability spintronic memoryINTEL CORP·Filed 2015·Granted Aug 15, 2017·2 cites·19 claims
- 2386US7646071B2Asymmetric channel doping for improved memory operation for floating body cell (FBC) memoryINTEL CORP·Filed 2006·Granted Jan 12, 2010·15 cites·17 claims
- 2484US9548441B2Perpendicular MTJ stacks with magnetic anisotrophy enhancing layer and crystallization barrier layerINTEL CORP·Filed 2015·Granted Jan 17, 2017·2 cites·11 claims
- 2584US8980650B2Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layerOGUZ KAAN·Filed 2014·Granted Mar 17, 2015·5 cites·5 claims
- 2683US11785759B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2022·Granted Oct 10, 2023·0 cites·25 claims
- 2783US10158065B2Spin-transfer torque memory (STTM) devices having magnetic contactsINTEL CORP·Filed 2014·Granted Dec 18, 2018·6 cites·24 claims
- 2882US9437808B2Electric field enhanced spin transfer torque memory (STTM) deviceINTEL CORP·Filed 2015·Granted Sep 6, 2016·5 cites·17 claims
- 2981US10832847B2Low stray field magnetic memoryINTEL CORP·Filed 2015·Granted Nov 10, 2020·2 cites·25 claims
- 3080US9496486B2Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form sameINTEL CORP·Filed 2015·Granted Nov 15, 2016·4 cites·18 claims
- 3180US9231194B2High stability spintronic memoryINTEL CORP·Filed 2013·Granted Jan 5, 2016·3 cites·20 claims
- 3279US8841644B2Thermal isolation in memory cellsKARPOV ELIJAH V·Filed 2012·Granted Sep 23, 2014·5 cites·27 claims
- 3378US9455011B2Methods and systems to read a magnetic tunnel junction (MTJ) based memory cell based on a pulsed read currentRAYCHOWDHURY ARIJIT·Filed 2012·Granted Sep 27, 2016·6 cites·20 claims
- 3478US7944003B2Asymmetric channel doping for improved memory operation for floating body cell (FBC) memoryINTEL CORP·Filed 2009·Granted May 17, 2011·7 cites·20 claims
- 3577US11462540B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2021·Granted Oct 4, 2022·0 cites·25 claims
- 3677US9779794B2Techniques for forming spin-transfer torque memory (STTM) elements having annular contactsINTEL CORP·Filed 2014·Granted Oct 3, 2017·5 cites·25 claims
- 3772US10580973B2Spin-transfer torque memory (STTM) devices having magnetic contactsINTEL CORP·Filed 2018·Granted Mar 3, 2020·2 cites·20 claims
- 3871US8796794B2Write current reduction in spin transfer torque memory devicesDOYLE BRIAN S·Filed 2010·Granted Aug 5, 2014·3 cites·9 claims
- 3967US7598560B2Hetero-bimos injection process for non-volatile flash memoryKAVALIEROS JACK T·Filed 2007·Granted Oct 6, 2009·3 cites·6 claims
- 4066US10522739B2Perpendicular magnetic memory with reduced switching currentINTEL CORP·Filed 2015·Granted Dec 31, 2019·1 cites·18 claims
- 4166US9543507B2Selector for low voltage embedded memoryKUO CHARLES·Filed 2012·Granted Jan 10, 2017·3 cites·21 claims
- 4265US10340443B2Perpendicular magnetic memory with filament conduction pathINTEL CORP·Filed 2015·Granted Jul 2, 2019·1 cites·26 claims
- 4357US9754996B2Write current reduction in spin transfer torque memory devicesINTEL CORP·Filed 2014·Granted Sep 5, 2017·0 cites·3 claims
- 4457US8913422B2Decreased switching current in spin-transfer torque memoryKARPOV ELIJAH V·Filed 2012·Granted Dec 16, 2014·1 cites·20 claims
- 4556US9214215B2Decreased switching current in spin-transfer torque memoryKARPOV ELIJAH V·Filed 2013·Granted Dec 15, 2015·0 cites·20 claims
- 4656US2025112122A1Backside power gatingINTEL CORP·Filed 2023·Application pending·0 cites
- 4750US10878871B2Spin transfer torque memory (STTM) devices with decreased critical current and computing device comprising the sameINTEL CORP·Filed 2017·Granted Dec 29, 2020·0 cites·22 claims
- 4849US9105839B2Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form sameDOYLE BRIAN S·Filed 2014·Granted Aug 11, 2015·0 cites·5 claims
- 4947US7719057B2Multiple oxide thickness for a semiconductor deviceINTEL CORP·Filed 2007·Granted May 18, 2010·0 cites·20 claims
- 5047US2007235877A1Integration scheme for semiconductor photodetectors on an integrated circuit chipRESHOTKO MIRIAM·Filed 2006·Application pending·0 cites
Showing the top 50 of 60 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →