Inventor · disambiguated record
Da Li
Also filed as: LI DA · LI DA-LAI
12 granted patents·10 pending applications·68 citations·filing 2012–2025
90Inventor score
Top patents by PatentIndex Score
22 records- 0197US12105422B2Photoresist development with halide chemistriesLAM RES CORP·Filed 2020·Granted Oct 1, 2024·13 cites·12 claims
- 0295US12510825B2Photoresist development with halide chemistriesLAM RES CORP·Filed 2024·Granted Dec 30, 2025·2 cites·33 claims
- 0395US12510826B2Photoresist development with halide chemistriesLAM RES CORP·Filed 2024·Granted Dec 30, 2025·2 cites·12 claims
- 0495US12504692B2Cyclic development of metal oxide based photoresist for etch stop deterrenceLAM RES CORP·Filed 2023·Granted Dec 23, 2025·2 cites·28 claims
- 0595US11988965B2Underlayer for photoresist adhesion and dose reductionLAM RES CORP·Filed 2021·Granted May 21, 2024·13 cites·42 claims
- 0695US11314168B2Underlayer for photoresist adhesion and dose reductionLAM RES CORP·Filed 2021·Granted Apr 26, 2022·24 cites·79 claims
- 0794US12474638B2Underlayer for photoresist adhesion and dose reductionLAM RES CORP·Filed 2024·Granted Nov 18, 2025·2 cites·63 claims
- 0893US12474640B2Integration of dry development and etch processes for EUV patterning in a single process chamberLAM RES CORP·Filed 2024·Granted Nov 18, 2025·4 cites·20 claims
- 0993US12062538B2Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvementLAM RES CORP·Filed 2020·Granted Aug 13, 2024·3 cites·32 claims
- 1084US2025328076A1Underlayer for photoresist adhesion and dose reductionLAM RES CORP·Filed 2025·Application pending·0 cites
- 1178US12027375B2Selective etch using a sacrificial maskLAM RES CORP·Filed 2020·Granted Jul 2, 2024·1 cites·21 claims
- 1273US2024429045A1Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvementLAM RES CORP·Filed 2024·Application pending·0 cites
- 1362US9559295B2Nano multilayer film, field effect tube, sensor, random accessory memory and preparation methodINST PHYSICS CAS·Filed 2012·Granted Jan 31, 2017·2 cites·13 claims
- 1458US2024329539A1Multi-step post-exposure treatment to improve dry development performance of metal-containing resistLAM RES CORP·Filed 2022·Application pending·0 cites
- 1553US12487236B2Polypeptide magnetic nanoparticle, preparation method therefor and use thereofBEIJING NANOPEP BIOTECH CORP·Filed 2020·Granted Dec 2, 2025·0 cites·8 claims
- 1651US2025244677A1All-in-one dry development for metal-containing photoresistLAM RES CORP·Filed 2025·Application pending·0 cites
- 1751US2025093781A1Rework of metal-containing photoresistLAM RES CORP·Filed 2022·Application pending·0 cites
- 1849US2024036474A1Control of metallic contamination from metal-containing photoresistLAM RES CORP·Filed 2022·Application pending·0 cites
- 1947US2023314954A1Dry backside and bevel edge clean of photoresistLAM RES CORP·Filed 2021·Application pending·0 cites
- 2047US2024192590A1Apparatus and process for euv dry resist sensitization by gas phase infusion of a sensitizerLAM RES CORP·Filed 2021·Application pending·0 cites
- 2146US2023031955A1Post application/exposure treatments to improve dry development performance of metal-containing euv resistLAM RES CORP·Filed 2021·Application pending·0 cites
- 2244US2022344136A1Dry chamber clean of photoresist filmsLAM RES CORP·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →