Inventor · disambiguated record
Darrell Larue Mcreynolds
Also filed as: MCREYNOLDS DARRELL · MCREYNOLDS DARRELL L · MCREYNOLDS DARRELL LARUE
4 granted patents·7 pending applications·37 citations·filing 1999–2010
74Inventor score
Top patents by PatentIndex Score
11 records- 0185US7837887B2Method of forming an ink supply channelSILVERBROOK RES PTY LTD·Filed 2009·Granted Nov 23, 2010·9 cites·10 claims
- 0271US7481943B2Method suitable for etching hydrophillic trenches in a substrateSILVERBROOK RES PTY LTD·Filed 2005·Granted Jan 27, 2009·3 cites·23 claims
- 0359US6191043B1Mechanism for etching a silicon layer in a plasma processing chamber to form deep openingsLAM RES CORP·Filed 1999·Granted Feb 20, 2001·25 cites·5 claims
- 0453US2009095709A1Method of etching ink supply channel with hydrophilic sidewallsSILVERBROOK RES PTY LTD·Filed 2008·Application pending·0 cites
- 0550US7588693B2Method of modifying an etched trenchSILVERBROOK RES PTY LTD·Filed 2005·Granted Sep 15, 2009·0 cites·17 claims
- 0647US2011024389A1Method of etching backside ink supply channels for an inkjet printheadSILVERBROOK RES PTY LTD·Filed 2010·Application pending·0 cites
- 0744US2009078675A1Method of removing photoresistSILVERBROOK RES PTY LTD·Filed 2007·Application pending·0 cites
- 0840US2009078674A1Reactive Ion Etching Process for Etching MetalsSILVERBROOK RES PTY LTD·Filed 2007·Application pending·0 cites
- 0940US2011049091A1Method of removing photoresist and etch-residues from viasSILVERBROOK RES PTY LTD·Filed 2009·Application pending·0 cites
- 1032US2001001743A1Mechanism for etching a silicon layer in a plasma processing chamber to form deep openingsFiled 2000·Application pending·0 cites
- 1128US2005280674A1Process for modifying the surface profile of an ink supply channel in a printheadMCREYNOLDS DARRELL L·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →