Inventor · disambiguated record
Damien Saint-Patrice
Also filed as: SAINT-PATRICE DAMIEN
14 granted patents·6 pending applications·26 citations·filing 2009–2022
87Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE14SAINT-PATRICE DAMIEN2BOLIS SEBASTIEN1EPCOS AG1JACQUET FABRICE1
Top patents by PatentIndex Score
20 records- 0186US10644067B2RF/DC decoupling system for RF switches based on phase change materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted May 5, 2020·5 cites·15 claims
- 0283US12162748B2Electromechanical microsystemCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Dec 10, 2024·1 cites·13 claims
- 0382US10529515B2Switch including a phase change materials based structure where only one part is activatableCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Jan 7, 2020·4 cites·19 claims
- 0476US9934922B2Commutator structure comprising several channels of phase change material and interdigitated control electrodesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Apr 3, 2018·3 cites·17 claims
- 0573US8674489B2Interconnect structure with cavity having one or several contact rises on the wall of the cavity and method for producing sameBOLIS SEBASTIEN·Filed 2010·Granted Mar 18, 2014·4 cites·18 claims
- 0672US9908773B2Method for packaging a microelectronic device in a hermetically sealed cavity and managing the atmosphere of the cavity with a dedicated holeCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Mar 6, 2018·3 cites·14 claims
- 0769US8898896B2Method of making a connection component with hollow insertsMARION FRANCOIS·Filed 2009·Granted Dec 2, 2014·4 cites·12 claims
- 0863US8470184B2Method for making a cavity in the thickness of a substrate which may form a site for receiving a componentSAINT-PATRICE DAMIEN·Filed 2010·Granted Jun 25, 2013·2 cites·15 claims
- 0957US11999613B2Electromechanical microsystemCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Jun 4, 2024·0 cites·22 claims
- 1052US2022380206A1Electromechanical microsystemCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Application pending·0 cites
- 1150US2022197014A1Electromechanical microsystemCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Application pending·0 cites
- 1250US2022197013A1Electromechanical microsystemCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Application pending·0 cites
- 1350US2024034616A1Electromechanical microsystemCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Application pending·0 cites
- 1446US2011041332A1Connection component provided with inserts comprising compensating blocksCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2009·Application pending·0 cites
- 1544US9199839B2Method of hermetically sealing a hole with a fuse materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Dec 1, 2015·0 cites·19 claims
- 1641US10532924B2Packaging structure of a microelectronic device having a hermeticity improved by a diffusion barrier layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Jan 14, 2020·0 cites·9 claims
- 1741US2017144883A1Microelectronic package and method of manufacturing a microelectronic packageEPCOS AG·Filed 2014·Application pending·0 cites
- 1837US10414648B2Method of making a closed cavity comprising a flap protecting the cavity when it is closedCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Sep 17, 2019·0 cites·19 claims
- 1936US8482130B2Interconnect structure comprising blind vias intended to be metalizedSAINT-PATRICE DAMIEN·Filed 2011·Granted Jul 9, 2013·0 cites·11 claims
- 2033US9003654B2Method for metalizing blind viasJACQUET FABRICE·Filed 2011·Granted Apr 14, 2015·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →