Inventor · disambiguated record
Darren Thomson
Also filed as: THOMSON DARREN · THOMSON DARREN B · THOMSON DARREN BRENT
15 granted patents·5 pending applications·1,544 citations·filing 1998–2010
95Inventor score
Files withUNIV NORTH CAROLINA STATE10NORTHROP GRUMMAN SYSTEMS CORP3NORTHROP GRUMMAN CORP2SINGH NARSINGH B1SINGH NARSINGH BAHADUR1
Top patents by PatentIndex Score
20 records- 0198US6177688B1Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substratesUNIV NORTH CAROLINA STATE·Filed 1998·Granted Jan 23, 2001·652 cites·22 claims
- 0297US6265289B1Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated therebyUNIV NORTH CAROLINA STATE·Filed 1999·Granted Jul 24, 2001·217 cites·80 claims
- 0397US6255198B1Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed therebyUNIV NORTH CAROLINA STATE·Filed 1999·Granted Jul 3, 2001·275 cites·53 claims
- 0495US7195993B2Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenchesUNIV NORTH CAROLINA STATE·Filed 2004·Granted Mar 27, 2007·82 cites·10 claims
- 0595US6489221B2High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substratesUNIV NORTH CAROLINA STATE·Filed 2001·Granted Dec 3, 2002·73 cites·32 claims
- 0695US6376339B2Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, and gallium nitride semiconductor structures fabricated therebyUNIV NORTH CAROLINA STATE·Filed 2001·Granted Apr 23, 2002·68 cites·39 claims
- 0794US6602764B2Methods of fabricating gallium nitride microelectronic layers on silicon layersUNIV NORTH CAROLINA STATE·Filed 2001·Granted Aug 5, 2003·68 cites·26 claims
- 0894US6462355B1Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substratesUNIV NORTH CAROLINA STATE·Filed 2000·Granted Oct 8, 2002·58 cites·5 claims
- 0987US6897483B2Second gallium nitride layers that extend into trenches in first gallium nitride layersUNIV NORTH CAROLINA STATE·Filed 2003·Granted May 24, 2005·27 cites·6 claims
- 1081US7371282B2Solid solution wide bandgap semiconductor materialsNORTHROP GRUMMAN CORP·Filed 2006·Granted May 13, 2008·4 cites·17 claims
- 1167US7855108B2Semiconductor heterojunction devices based on SiCNORTHROP GRUMMAN SYSTEMS CORP·Filed 2010·Granted Dec 21, 2010·2 cites·8 claims
- 1263US7378684B2Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substratesUNIV NORTH CAROLINA STATE·Filed 2002·Granted May 27, 2008·6 cites·18 claims
- 1358US7217947B2Semiconductor light source and method of makingNORTHROP GRUMMAN CORP·Filed 2004·Granted May 15, 2007·12 cites·8 claims
- 1453US2008206121A1Solid solution wide bandgap semiconductor materialsSINGH NARSINGH BAHADUR·Filed 2008·Application pending·0 cites
- 1547US7683400B1Semiconductor heterojunction devices based on SiCNORTHROP GRUMMAN SYSTEMS CORP·Filed 2006·Granted Mar 23, 2010·0 cites·18 claims
- 1643US2008157090A1Transplanted epitaxial regrowth for fabricating large area substrates for electronic devicesTHOMSON DARREN BRENT·Filed 2006·Application pending·0 cites
- 1742US7525099B2Nuclear radiation detection systemNORTHROP GRUMMAN SYSTEMS CORP·Filed 2007·Granted Apr 28, 2009·0 cites·19 claims
- 1841US2001039102A1Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated therebyFiled 2001·Application pending·0 cites
- 1937US2004029365A1Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed therebyFiled 2003·Application pending·0 cites
- 2035US2006081856A1Novel wide bandgap material and method of makingSINGH NARSINGH B·Filed 2004·Application pending·0 cites
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