Inventor · disambiguated record
Daewon Yang
Also filed as: YANG DAEWON
20 granted patents·10 pending applications·115 citations·filing 2003–2015
94Inventor score
Top patents by PatentIndex Score
30 records- 0189US7615432B2HDP/PECVD methods of fabricating stress nitride structures for field effect transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 10, 2009·20 cites·16 claims
- 0288US7521307B2CMOS structures and methods using self-aligned dual stressed layersIBM·Filed 2006·Granted Apr 21, 2009·10 cites·6 claims
- 0388US7462527B2Method of forming nitride films with high compressive stress for improved PFET device performanceIBM·Filed 2005·Granted Dec 9, 2008·14 cites·16 claims
- 0487US8030707B2Semiconductor structureIBM·Filed 2009·Granted Oct 4, 2011·13 cites·8 claims
- 0584US7563704B2Method of forming an interconnect including a dielectric cap having a tensile stressIBM·Filed 2005·Granted Jul 21, 2009·12 cites·14 claims
- 0679US9080239B2Method and apparatus for angular high density plasma chemical vapor depositionYANG DAEWON·Filed 2012·Granted Jul 14, 2015·4 cites·11 claims
- 0779US7514370B2Compressive nitride film and method of manufacturing thereofIBM·Filed 2006·Granted Apr 7, 2009·6 cites·5 claims
- 0874US8557649B2Method for controlling structure heightVENIGALLA RAJASEKHAR·Filed 2011·Granted Oct 15, 2013·4 cites·5 claims
- 0970US7750414B2Structure and method for reducing threshold voltage variationIBM·Filed 2008·Granted Jul 6, 2010·4 cites·2 claims
- 1069US7521308B2Dual layer stress liner for MOSFETSIBM·Filed 2006·Granted Apr 21, 2009·3 cites·3 claims
- 1169US6914015B2HDP process for high aspect ratio gap fillingIBM·Filed 2003·Granted Jul 5, 2005·14 cites·23 claims
- 1265US8679938B2Shallow trench isolation for device including deep trench capacitorsFANG SUNFEI·Filed 2012·Granted Mar 25, 2014·2 cites·20 claims
- 1361US9318344B2CMOS structures and methods for improving yieldIBM·Filed 2014·Granted Apr 19, 2016·0 cites·13 claims
- 1461US9016236B2Method and apparatus for angular high density plasma chemical vapor depositionYANG DAEWON·Filed 2008·Granted Apr 28, 2015·1 cites·2 claims
- 1561US7179760B2Bilayer cap structure including HDP/bHDP films for conductive metallization and method of making sameIBM·Filed 2005·Granted Feb 20, 2007·1 cites·15 claims
- 1658US7943467B2Structure and method to fabricate MOSFET with short gateIBM·Filed 2008·Granted May 17, 2011·1 cites·15 claims
- 1758US2009194819A1Cmos structures and methods using self-aligned dual stressed layersIBM·Filed 2009·Application pending·0 cites
- 1855US7851376B2Compressive nitride film and method of manufacturing thereofIBM·Filed 2009·Granted Dec 14, 2010·0 cites·18 claims
- 1955US6911378B2Stabilization of fluorine-containing dielectric materials in a metal insulator wiring structureIBM·Filed 2003·Granted Jun 28, 2005·6 cites·21 claims
- 2054US2014302685A1Dieletric cap having material with optical band gap to substantially block uv radiation during curing treatment, and related methodsIBM·Filed 2014·Application pending·0 cites
- 2153US7804136B2Method of forming nitride films with high compressive stress for improved PFET device performanceIBM·Filed 2007·Granted Sep 28, 2010·0 cites·5 claims
- 2253US7491660B2Method of forming nitride films with high compressive stress for improved PFET device performanceIBM·Filed 2007·Granted Feb 17, 2009·0 cites·12 claims
- 2351US2008173985A1Dielectric cap having material with optical band gap to substantially block uv radiation during curing treatment, and related methodsIBM·Filed 2007·Application pending·0 cites
- 2449US2009311855A1Method of fabricating a gate structureBRUFF RICHARD A·Filed 2009·Application pending·0 cites
- 2549US2008146039A1Method to reduce plasma charge damage from high density plasma chemical vapor deposition (hdp-cvd) processYANG DAEWON·Filed 2006·Application pending·0 cites
- 2647US2009101980A1Method of fabricating a gate structure and the structure thereofIBM·Filed 2007·Application pending·0 cites
- 2747US2009236676A1Structure and method to make high performance mosfet with fully silicided gateIBM·Filed 2008·Application pending·0 cites
- 2842US2008142897A1Integrated circuit system having strained transistorCHARTERED SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 2939US2012027956A1Modification of nitride top layerYANG DAEWON·Filed 2010·Application pending·0 cites
- 3031US2017170048A1Wafer handler for infrared laser releaseGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
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