Inventor · disambiguated record
Dennis Garbis
Also filed as: GARBIS DENNIS · GARBIS DENNIS J · HELLER ROBERT
17 granted patents·911 citations·filing 1979–1998
95Inventor score
Top patents by PatentIndex Score
17 records- 0195US4499354ASusceptor for radiant absorption heater systemGEN INSTRUMENT CORP·Filed 1982·Granted Feb 12, 1985·571 cites·17 claims
- 0293US4522149AReactor and susceptor for chemical vapor deposition processGEN INSTRUMENT CORP·Filed 1983·Granted Jun 11, 1985·80 cites·15 claims
- 0381US4293755AMethod of cooling induction-heated vapor deposition apparatus and cooling apparatus thereforGEN INSTRUMENT CORP·Filed 1980·Granted Oct 6, 1981·25 cites·2 claims
- 0480US4394828AShielded/jacketed ribbon-cable sheathing stripping toolGARBIS DENNIS J·Filed 1981·Granted Jul 26, 1983·39 cites·3 claims
- 0574US5882986ASemiconductor chips having a mesa structure provided by sawingGEN SEMICONDUCTOR INC·Filed 1998·Granted Mar 16, 1999·48 cites·9 claims
- 0670US4284867AChemical vapor deposition reactor with infrared reflectorGEN INSTRUMENT CORP·Filed 1979·Granted Aug 18, 1981·19 cites·1 claims
- 0756US5432121AMethod for fabricating a multilayer epitaxial structureGI CORP·Filed 1994·Granted Jul 11, 1995·27 cites·18 claims
- 0854US5360509ALow cost method of fabricating epitaxial semiconductor devicesGI CORP·Filed 1993·Granted Nov 1, 1994·25 cites·25 claims
- 0953US4238436AMethod of obtaining polycrystalline siliconGEN INSTRUMENT CORP·Filed 1979·Granted Dec 9, 1980·11 cites·17 claims
- 1048US5298457AMethod of making semiconductor devices using epitaxial techniques to form Si/Si-Ge interfaces and inverting the materialG I CORP·Filed 1993·Granted Mar 29, 1994·22 cites·16 claims
- 1144US5640043AHigh voltage silicon diode with optimum placement of silicon-germanium layersGEN INSTRUMENT CORP·Filed 1995·Granted Jun 17, 1997·10 cites·15 claims
- 1238US5571329AGas flow system for CVD reactorGI CORP·Filed 1995·Granted Nov 5, 1996·10 cites·4 claims
- 1332US5342805AMethod of growing a semiconductor material by epilaxyG I CORP·Filed 1993·Granted Aug 30, 1994·10 cites·11 claims
- 1431US6248651B1Low cost method of fabricating transient voltage suppressor semiconductor devices or the likeGEN SEMICONDUCTOR INC·Filed 1998·Granted Jun 19, 2001·3 cites·16 claims
- 1531US4271235AMethod of obtaining polycrystalline silicon and workpiece useful thereinHILL LAWRENCE·Filed 1979·Granted Jun 2, 1981·4 cites·8 claims
- 1627US5635414ALow cost method of fabricating shallow junction, Schottky semiconductor devicesFiled 1995·Granted Jun 3, 1997·0 cites·19 claims
- 1727US5324685AMethod for fabricating a multilayer epitaxial structureHIRTZ REINHOLD·Filed 1993·Granted Jun 28, 1994·7 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →