Inventor · disambiguated record
Dechao Guo
Also filed as: GUO DECHAO
232 granted patents·40 pending applications·1,411 citations·filing 2009–2023
99Inventor score
Top patents by PatentIndex Score
272 records- 0199US11665877B1Stacked FET SRAM designIBM·Filed 2021·Granted May 30, 2023·5 cites·18 claims
- 0299US11201153B2Stacked field effect transistor with wrap-around contactsIBM·Filed 2020·Granted Dec 14, 2021·9 cites·15 claims
- 0399US11069684B1Stacked field effect transistors with reduced coupling effectIBM·Filed 2020·Granted Jul 20, 2021·49 cites·20 claims
- 0499US9318581B1Forming wrap-around silicide contact on finFETIBM·Filed 2015·Granted Apr 19, 2016·82 cites·11 claims
- 0598US11984401B2Stacked FET integration with BSPDNIBM·Filed 2021·Granted May 14, 2024·5 cites·8 claims
- 0698US9721848B1Cutting fins and gates in CMOS devicesIBM·Filed 2016·Granted Aug 1, 2017·32 cites·20 claims
- 0798US9397197B1Forming wrap-around silicide contact on finFETIBM·Filed 2015·Granted Jul 19, 2016·28 cites·9 claims
- 0898US8900935B2Deposition on a nanowire using atomic layer depositionGUO DECHAO·Filed 2011·Granted Dec 2, 2014·347 cites·20 claims
- 0997US10797163B1Leakage control for gate-all-around field-effect transistor devicesIBM·Filed 2019·Granted Oct 6, 2020·26 cites·19 claims
- 1097US9773893B1Forming a sacrificial liner for dual channel devicesIBM·Filed 2016·Granted Sep 26, 2017·11 cites·20 claims
- 1196US11869893B2Stacked field effect transistor with wrap-around contactsIBM·Filed 2021·Granted Jan 9, 2024·2 cites·8 claims
- 1296US9978750B1Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devicesIBM·Filed 2017·Granted May 22, 2018·11 cites·17 claims
- 1396US9922984B1Threshold voltage modulation through channel length adjustmentIBM·Filed 2017·Granted Mar 20, 2018·10 cites·20 claims
- 1496US9704754B1Self-aligned spacer for cut-last transistor fabricationIBM·Filed 2016·Granted Jul 11, 2017·13 cites·20 claims
- 1596US8513131B2Fin field effect transistor with variable channel thickness for threshold voltage tuningCAI MING·Filed 2011·Granted Aug 20, 2013·39 cites·14 claims
- 1696US8481415B2Self-aligned contact combined with a replacement metal gate/high-K gate dielectricYUAN JUN·Filed 2010·Granted Jul 9, 2013·28 cites·15 claims
- 1796US8084346B1Replacement metal gate methodGUO DECHAO·Filed 2010·Granted Dec 27, 2011·26 cites·20 claims
- 1895US12176348B2Self-aligned hybrid substrate stacked gate-all-around transistorsIBM·Filed 2021·Granted Dec 24, 2024·2 cites·24 claims
- 1995US9922983B1Threshold voltage modulation through channel length adjustmentIBM·Filed 2016·Granted Mar 20, 2018·10 cites·14 claims
- 2095US9157887B2Graphene sensorIBM·Filed 2013·Granted Oct 13, 2015·19 cites·4 claims
- 2195US8928086B2Strained finFET with an electrically isolated channelIBM·Filed 2013·Granted Jan 6, 2015·19 cites·15 claims
- 2295US8735947B1Non-volatile graphene nanomechanical switchIBM·Filed 2012·Granted May 27, 2014·12 cites·15 claims
- 2395US8697523B2Integration of SMT in replacement gate FINFET process flowCAI MING·Filed 2012·Granted Apr 15, 2014·25 cites·18 claims
- 2494US12272648B2Semiconductor device having a backside power railIBM·Filed 2022·Granted Apr 8, 2025·2 cites·19 claims
- 2594US10096713B1FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formationIBM·Filed 2017·Granted Oct 9, 2018·7 cites·10 claims
- 2694US9960254B1Replacement metal gate scheme with self-alignment gate for vertical field effect transistorsIBM·Filed 2017·Granted May 1, 2018·22 cites·10 claims
- 2794US9412641B1FinFET having controlled dielectric region heightIBM·Filed 2015·Granted Aug 9, 2016·10 cites·18 claims
- 2894US9190520B2Strained finFET with an electrically isolated channelIBM·Filed 2014·Granted Nov 17, 2015·15 cites·18 claims
- 2994US9142660B2Method to fabricate a vertical transistor having an asymmetric gate with two conductive layers having different work functionsGUO DECHAO·Filed 2012·Granted Sep 22, 2015·17 cites·19 claims
- 3094US8648438B2Structure and method to form passive devices in ETSOI process flowCAI MING·Filed 2011·Granted Feb 11, 2014·19 cites·19 claims
- 3193US12268031B2Backside power rails and power distribution network for density scalingIBM·Filed 2021·Granted Apr 1, 2025·2 cites·12 claims
- 3293US9390976B2Method of forming epitaxial buffer layer for finFET source and drain junction leakage reductionIBM·Filed 2015·Granted Jul 12, 2016·8 cites·12 claims
- 3393US8610172B2FETs with hybrid channel materialsGUO DECHAO·Filed 2011·Granted Dec 17, 2013·17 cites·21 claims
- 3493US8513081B2Carbon implant for workfunction adjustment in replacement gate transistorGUO DECHAO·Filed 2011·Granted Aug 20, 2013·12 cites·19 claims
- 3593US8288296B2Integrated circuit with replacement metal gates and dual dielectricsWONG KEITH KWONG HON·Filed 2010·Granted Oct 16, 2012·21 cites·15 claims
- 3692US11894462B2Forming a sacrificial liner for dual channel devicesADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2021·Granted Feb 6, 2024·1 cites·20 claims
- 3792US9171954B2FinFET structure and method to adjust threshold voltage in a FinFET structureIBM·Filed 2014·Granted Oct 27, 2015·9 cites·14 claims
- 3892US9068936B2Graphene sensorGUO DECHAO·Filed 2012·Granted Jun 30, 2015·11 cites·10 claims
- 3992US8866214B2Vertical transistor having an asymmetric gateGUO DECHAO·Filed 2011·Granted Oct 21, 2014·13 cites·11 claims
- 4092US8420474B1Controlling threshold voltage in carbon based field effect transistorsFRANK MARTIN M·Filed 2012·Granted Apr 16, 2013·15 cites·23 claims
- 4191US11658116B2Interconnects on multiple sides of a semiconductor structureIBM·Filed 2021·Granted May 23, 2023·2 cites·8 claims
- 4291US11289573B2Contact resistance reduction in nanosheet device structureIBM·Filed 2019·Granted Mar 29, 2022·5 cites·20 claims
- 4391US11282838B2Stacked gate structuresIBM·Filed 2020·Granted Mar 22, 2022·2 cites·16 claims
- 4491US8772782B2Transistor employing vertically stacked self-aligned carbon nanotubesCAO QING·Filed 2011·Granted Jul 8, 2014·26 cites·25 claims
- 4591US8741700B1Non-volatile graphene nanomechanical switchIBM·Filed 2013·Granted Jun 3, 2014·8 cites·5 claims
- 4690US10692778B2Gate-all-around FETs having uniform threshold voltageIBM·Filed 2018·Granted Jun 23, 2020·4 cites·15 claims
- 4790US8753964B2FinFET structure having fully silicided finBRYANT ANDRES·Filed 2011·Granted Jun 17, 2014·12 cites·12 claims
- 4890US8569135B2Replacement gate electrode with planar work function material layersGUO DECHAO·Filed 2011·Granted Oct 29, 2013·10 cites·12 claims
- 4990US8455365B2Self-aligned carbon electronics with embedded gate electrodeGUO DECHAO·Filed 2011·Granted Jun 4, 2013·9 cites·18 claims
- 5089US10510892B2Forming a sacrificial liner for dual channel devicesIBM·Filed 2016·Granted Dec 17, 2019·3 cites·16 claims
Showing the top 50 of 272 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →