Inventor · disambiguated record
Dexin Kong
Also filed as: KONG DEXIN
54 granted patents·1 pending application·53 citations·filing 2018–2024
97Inventor score
Files withIBM52BIOTECHNOLOGY RES INSTITUTE OF CHINESE ACADEMY OF AGRICULTURAL SCIENCES1NOVA LTD1UNIV SOUTH CHINA AGRICULT1
Top patents by PatentIndex Score
55 records- 0196US10714569B1Producing strained nanosheet field effect transistors using a phase change materialIBM·Filed 2019·Granted Jul 14, 2020·12 cites·20 claims
- 0294US11011704B2Forming RRAM cell structure with filament confinementIBM·Filed 2020·Granted May 18, 2021·3 cites·20 claims
- 0394US10658583B1Forming RRAM cell structure with filament confinementIBM·Filed 2019·Granted May 19, 2020·8 cites·20 claims
- 0493US10615288B1Integration scheme for non-volatile memory on gate-all-around structureIBM·Filed 2018·Granted Apr 7, 2020·7 cites·10 claims
- 0590US11195755B2Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistorsIBM·Filed 2020·Granted Dec 7, 2021·2 cites·20 claims
- 0687US10749040B2Integration scheme for non-volatile memory on gate-all-around structureIBM·Filed 2019·Granted Aug 18, 2020·3 cites·10 claims
- 0785US10686014B2Semiconductor memory device having a vertical active regionIBM·Filed 2018·Granted Jun 16, 2020·2 cites·14 claims
- 0883US10903421B2Controlling filament formation and location in a resistive random-access memory deviceIBM·Filed 2018·Granted Jan 26, 2021·3 cites·13 claims
- 0983US10559625B1RRAM cells in crossbar array architectureIBM·Filed 2018·Granted Feb 11, 2020·3 cites·15 claims
- 1081US11430513B1Non-volatile memory structure and method for low programming voltage for cross bar arrayIBM·Filed 2021·Granted Aug 30, 2022·1 cites·20 claims
- 1179US11101323B2RRAM cells in crossbar array architectureIBM·Filed 2019·Granted Aug 24, 2021·2 cites·17 claims
- 1278US10692203B2Measuring defectivity by equipping model-less scatterometry with cognitive machine learningIBM·Filed 2018·Granted Jun 23, 2020·3 cites·20 claims
- 1377US12225833B2Oxide-based resistive memory having a plasma-exposed bottom electrodeIBM·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 1476US11199505B2Machine learning enhanced optical-based screening for in-line wafer testingIBM·Filed 2018·Granted Dec 14, 2021·2 cites·18 claims
- 1575US11121318B2Tunable forming voltage for RRAM deviceIBM·Filed 2020·Granted Sep 14, 2021·1 cites·20 claims
- 1674US11682582B2Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistorsIBM·Filed 2021·Granted Jun 20, 2023·0 cites·20 claims
- 1773US10998229B2Transistor with improved self-aligned contactIBM·Filed 2018·Granted May 4, 2021·1 cites·7 claims
- 1870US11937522B2Confining filament at pillar center for memory devicesIBM·Filed 2021·Granted Mar 19, 2024·0 cites·17 claims
- 1966US11647680B2Oxide-based resistive memory having a plasma-exposed bottom electrodeIBM·Filed 2020·Granted May 9, 2023·0 cites·13 claims
- 2066US11362093B2Co-integration of non-volatile memory on gate-all-around field effect transistorIBM·Filed 2020·Granted Jun 14, 2022·0 cites·10 claims
- 2165US11812675B2Filament confinement in resistive random access memoryIBM·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
- 2264US11751492B2Embedded memory pillarIBM·Filed 2021·Granted Sep 5, 2023·0 cites·20 claims
- 2364US10784380B2Gate-all-around transistor based non-volatile memory devicesIBM·Filed 2019·Granted Sep 22, 2020·0 cites·20 claims
- 2463US12453293B2Redundant bottom pad and sacrificial via contact for process induced RRAM formingIBM·Filed 2021·Granted Oct 21, 2025·0 cites·16 claims
- 2562US12033061B2Capacitor-based synapse network structure with metal shielding between outputsIBM·Filed 2020·Granted Jul 9, 2024·0 cites·13 claims
- 2662US11183636B2Techniques for forming RRAM cellsIBM·Filed 2020·Granted Nov 23, 2021·0 cites·20 claims
- 2762US11101322B2RRAM cells in crossbar array architectureIBM·Filed 2019·Granted Aug 24, 2021·0 cites·18 claims
- 2861US12256653B2PCM cell with nanoheater surrounded with airgapsIBM·Filed 2021·Granted Mar 18, 2025·0 cites·20 claims
- 2961US11075200B2Integrated device with vertical field-effect transistors and hybrid channelsIBM·Filed 2019·Granted Jul 27, 2021·0 cites·20 claims
- 3060US12310262B2Phase change memory with encapsulated phase change elementIBM·Filed 2021·Granted May 20, 2025·0 cites·9 claims
- 3160US11856878B2High-density resistive random-access memory array with self-aligned bottom electrode contactIBM·Filed 2021·Granted Dec 26, 2023·0 cites·19 claims
- 3260US11043634B2Confining filament at pillar center for memory devicesIBM·Filed 2019·Granted Jun 22, 2021·0 cites·8 claims
- 3360US10707127B2Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistorsIBM·Filed 2018·Granted Jul 7, 2020·0 cites·15 claims
- 3460US2025034585A1Genes for regulating root growth angle and loging resistance in maize and applications thereofBIOTECHNOLOGY RES INSTITUTE OF CHINESE ACADEMY OF AGRICULTURAL SCIENCES·Filed 2024·Application pending·0 cites
- 3559US12310267B2ReRAM module with intermediate electrodeIBM·Filed 2021·Granted May 20, 2025·0 cites·5 claims
- 3659US11877524B2Nanotip filament confinementIBM·Filed 2021·Granted Jan 16, 2024·0 cites·20 claims
- 3759US10971549B2Semiconductor memory device having a vertical active regionIBM·Filed 2019·Granted Apr 6, 2021·0 cites·17 claims
- 3859US10586875B2Gate-all-around transistor based non-volatile memory devicesIBM·Filed 2018·Granted Mar 10, 2020·0 cites·9 claims
- 3958US10804274B2Co-integration of non-volatile memory on gate-all-around field effect transistorIBM·Filed 2019·Granted Oct 13, 2020·0 cites·10 claims
- 4058US10679992B1Integrated device with vertical field-effect transistors and hybrid channelsIBM·Filed 2018·Granted Jun 9, 2020·0 cites·12 claims
- 4157US10658590B2Techniques for forming RRAM cellsIBM·Filed 2018·Granted May 19, 2020·0 cites·15 claims
- 4256US11956975B2BEOL fat wire level ground rule compatible embedded artificial intelligence integrationIBM·Filed 2021·Granted Apr 9, 2024·0 cites·20 claims
- 4354US10763118B2Cyclic selective deposition for tight pitch patterningIBM·Filed 2018·Granted Sep 1, 2020·0 cites·17 claims
- 4453US12107008B2Maskless alignment scheme for BEOL memory array manufacturingIBM·Filed 2021·Granted Oct 1, 2024·0 cites·20 claims
- 4552US11665987B2Integrated switch using stacked phase change materialsIBM·Filed 2021·Granted May 30, 2023·0 cites·19 claims
- 4652US11270768B2Failure prevention of chip power networkIBM·Filed 2020·Granted Mar 8, 2022·0 cites·20 claims
- 4751US11004751B2Vertical transistor having reduced edge fin variationIBM·Filed 2019·Granted May 11, 2021·0 cites·6 claims
- 4848US11221359B2Determining device operability via metal-induced layer exchangeIBM·Filed 2019·Granted Jan 11, 2022·0 cites·8 claims
- 4947US11189724B2Method of forming a top epitaxy source/drain structure for a vertical transistorIBM·Filed 2018·Granted Nov 30, 2021·0 cites·12 claims
- 5047US11177319B2RRAM device with spacer for electrode isolationIBM·Filed 2019·Granted Nov 16, 2021·0 cites·10 claims
Showing the top 50 of 55 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →