Inventor · disambiguated record

Dethard Peters

Also filed as: PETERS DETHARD

65 granted patents·18 pending applications·567 citations·filing 1994–2025

98Inventor score

Technology areasH10D H10P H10W H01L G01L

Files withINFINEON TECHNOLOGIES AG66 SICED ELECT DEV GMBH & CO KG6 INFINEON TECHNOLOGIES AUSTRIA2 INFINEON TECHNOLOGIES AUSTRIA AG2 SIEMENS AG2

Top patents by PatentIndex Score

83 records

0198US9478655B2Semiconductor device having a lower diode region arranged below a trenchINFINEON TECHNOLOGIES AG·Filed 2015·Granted Oct 25, 2016·28 cites·30 claims
0297US9837527B2Semiconductor device with a trench electrodeINFINEON TECHNOLOGIES AG·Filed 2015·Granted Dec 5, 2017·22 cites·28 claims
0397US9293558B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2012·Granted Mar 22, 2016·31 cites·10 claims
0496US10304953B2Semiconductor device with stripe-shaped trench gate structures, transistor mesas and diode mesasINFINEON TECHNOLOGIES AG·Filed 2015·Granted May 28, 2019·15 cites·19 claims
0596US9577073B2Method of forming a silicon-carbide device with a shielded gateINFINEON TECHNOLOGIES AG·Filed 2014·Granted Feb 21, 2017·19 cites·18 claims
0695US8637922B1Semiconductor deviceSIEMIENIEC RALF·Filed 2012·Granted Jan 28, 2014·28 cites·27 claims
0794US10700192B2Semiconductor device having a source electrode contact trenchINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jun 30, 2020·7 cites·20 claims
0894US10211306B2Semiconductor device with diode region and trench gate structureINFINEON TECHNOLOGIES AG·Filed 2018·Granted Feb 19, 2019·15 cites·21 claims
0994US10074741B2Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode regionINFINEON TECHNOLOGIES AG·Filed 2016·Granted Sep 11, 2018·10 cites·23 claims
1094US9741712B2Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal latticeINFINEON TECHNOLOGIES AG·Filed 2016·Granted Aug 22, 2017·8 cites·21 claims
1193US10714609B2Semiconductor device with stripe-shaped trench gate structures, transistor mesas and diode mesasINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jul 14, 2020·7 cites·8 claims
1293US10586845B1SiC trench transistor device and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2018·Granted Mar 10, 2020·9 cites·25 claims
1393US6936850B2Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum materialSICED ELECT DEV GMBH & CO KG·Filed 2002·Granted Aug 30, 2005·95 cites·7 claims
1492US9997515B2Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal latticeINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jun 12, 2018·6 cites·24 claims
1592US6316791B1Semiconductor structure having a predetermined alpha-silicon carbide region, and use of this semiconductor structureSICED ELECT DEV GMBH & CO KG·Filed 2000·Granted Nov 13, 2001·78 cites·18 claims
1692US6204135B1Method for patterning semiconductors with high precision, good homogeneity and reproducibilitySICED ELECT DEV GMBH & CO KG·Filed 2000·Granted Mar 20, 2001·76 cites·19 claims
1791US10038087B2Semiconductor device and transistor cell having a diode regionINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 31, 2018·4 cites·20 claims
1890US11552173B2Silicon carbide device with trench gateINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 10, 2023·2 cites·26 claims
1990US10818749B2Semiconductor devices and a circuit for controlling a field effect transistor of a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Oct 27, 2020·6 cites·11 claims
2090US9818818B2Power semiconductor device including trench gate structures with longitudinal axes tilted to a main crystal directionINFINEON TECHNOLOGIES AG·Filed 2016·Granted Nov 14, 2017·6 cites·15 claims
2187US10727330B2Semiconductor device with diode regionINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jul 28, 2020·2 cites·20 claims
2284US9876103B2Semiconductor device and transistor cell having a diode regionINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jan 23, 2018·2 cites·20 claims
2383US10957768B1Silicon carbide device with an implantation tail compensation regionINFINEON TECHNOLOGIES AG·Filed 2019·Granted Mar 23, 2021·3 cites·20 claims
2482US12266694B2Silicon carbide device with a stripe-shaped trench gate structureINFINEON TECHNOLOGIES AG·Filed 2023·Granted Apr 1, 2025·0 cites·27 claims
2581US10615254B2Semiconductor device including a super junction structure in a SiC semiconductor bodyINFINEON TECHNOLOGIES AG·Filed 2018·Granted Apr 7, 2020·2 cites·15 claims
2680US10679983B2Method of producing a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Jun 9, 2020·2 cites·7 claims
2779US10700182B2Semiconductor device with transistor cells and a drift structure and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jun 30, 2020·2 cites·26 claims
2879US8854087B2Electronic circuit with a reverse conducting transistor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2012·Granted Oct 7, 2014·5 cites·22 claims
2979US7646026B2SiC-PN power diodeSICED ELECT DEV GMBH & CO KG·Filed 2006·Granted Jan 12, 2010·8 cites·20 claims
3078US11799026B2SiC device having a dual mode sense terminal, electronic systems for current and temperature sensing, and methods of current and temperature sensingINFINEON TECHNOLOGIES AG·Filed 2021·Granted Oct 24, 2023·1 cites·20 claims
3178US10217636B2Method of manufacturing a silicon carbide semiconductor device by removing amorphized portionsINFINEON TECHNOLOGIES AG·Filed 2018·Granted Feb 26, 2019·2 cites·17 claims
3277US2025203986A1Silicon carbide device with a stripe-shaped trench gate structureINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
3376US11888032B2Method of producing a silicon carbide device with a trench gateINFINEON TECHNOLOGIES AG·Filed 2022·Granted Jan 30, 2024·0 cites·20 claims
3473US9960230B2Silicon-carbide transistor device with a shielded gateINFINEON TECHNOLOGIES AG·Filed 2017·Granted May 1, 2018·1 cites·20 claims
3572US6097039ASilicon carbide semiconductor configuration with a high degree of channel mobilitySIEMENS AG·Filed 1999·Granted Aug 1, 2000·33 cites·21 claims
3671US11869840B2Silicon carbide device and method for forming a silicon carbide deviceINFINEON TECHNOLOGIES AG·Filed 2022·Granted Jan 9, 2024·0 cites·24 claims
3769US12132104B2Dual mode current and temperature sensing for SiC devicesINFINEON TECHNOLOGIES AG·Filed 2023·Granted Oct 29, 2024·0 cites·24 claims
3869US11462611B2SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2020·Granted Oct 4, 2022·0 cites·15 claims
3968US12294018B2Vertical power semiconductor device including silicon carbide (sic) semiconductor bodyINFINEON TECHNOLOGIES AG·Filed 2024·Granted May 6, 2025·0 cites·18 claims
4068US11626477B2Silicon carbide field-effect transistor including shielding areasINFINEON TECHNOLOGIES AG·Filed 2021·Granted Apr 11, 2023·0 cites·23 claims
4167US11444155B2Silicon carbide semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2021·Granted Sep 13, 2022·0 cites·12 claims
4266US10896952B2SiC device and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 19, 2021·0 cites·16 claims
4365US6667495B2Semiconductor configuration with ohmic contact-connection and method for contact-connecting a semiconductor configurationSCICED ELECTRONICS DEV GMBH &·Filed 2000·Granted Dec 23, 2003·15 cites·21 claims
4464US11211303B2Semiconductor device including a passivation structure and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2019·Granted Dec 28, 2021·1 cites·25 claims
4564US8102012B2Transistor component having a shielding structurePETERS DETHARD·Filed 2009·Granted Jan 24, 2012·4 cites·36 claims
4663US2018315845A1Semiconductor Device and Transistor Cell Having a Diode RegionINFINEON TECHNOLOGIES AG·Filed 2018·Application pending·0 cites
4762US2025130270A1Transistor arrangement and method for measuring an on- resistance of a transistor arrangementINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
4860US11101343B2Silicon carbide field-effect transistor including shielding areasINFINEON TECHNOLOGIES AG·Filed 2019·Granted Aug 24, 2021·0 cites·20 claims
4960US10361192B2Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal latticeINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jul 23, 2019·0 cites·25 claims
5060US2024371772A1Vertical power semiconductor device having an interlayer dielectric structureINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites

Showing the top 50 of 83 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →