Inventor · disambiguated record
Derick J. Wristers
Also filed as: WRISTERS DERICK · WRISTERS DERICK J
152 granted patents·3 pending applications·5,612 citations·filing 1993–2006
99Inventor score
Top patents by PatentIndex Score
155 records- 0199US6111260AMethod and apparatus for in situ anneal during ion implantADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 29, 2000·305 cites·19 claims
- 0298US5939763AUltrathin oxynitride structure and process for VLSI applicationsADVANCED MICRO DEVICES INC·Filed 1996·Granted Aug 17, 1999·263 cites·27 claims
- 0397US6689671B1Low temperature solid-phase epitaxy fabrication process for MOS devices built on strained semiconductor substrateADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 10, 2004·145 cites·12 claims
- 0497US6093611AOxide liner for high reliability with reduced encroachment of the source/drain regionADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 25, 2000·294 cites·25 claims
- 0596US6346426B1Method and apparatus for characterizing semiconductor device performance variations based on independent critical dimension measurementsADVANCED MICRO DEVICES INC·Filed 2000·Granted Feb 12, 2002·110 cites·41 claims
- 0695US6707106B1Semiconductor device with tensile strain silicon introduced by compressive material in a buried oxide layerADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 16, 2004·91 cites·20 claims
- 0793US6245689B1Process for reliable ultrathin oxynitride formationADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 12, 2001·107 cites·27 claims
- 0893US6060345AMethod of making NMOS and PMOS devices with reduced masking stepsADVANCED MICRO DEVICES INC·Filed 1997·Granted May 9, 2000·114 cites·22 claims
- 0992US6316302B1Isotropically etching sidewall spacers to be used for both an NMOS source/drain implant and a PMOS LDD implantADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 13, 2001·57 cites·21 claims
- 1092US5885877AComposite gate electrode incorporating dopant diffusion-retarding barrier layer adjacent to underlying gate dielectricADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 23, 1999·107 cites·27 claims
- 1190US6103559AMethod of making disposable channel masking for both source/drain and LDD implant and subsequent gate fabricationAMD INC ADVANCED MICRO DEVICES·Filed 1999·Granted Aug 15, 2000·108 cites·20 claims
- 1290US5918129AMethod of channel doping using diffusion from implanted polysiliconADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 29, 1999·110 cites·18 claims
- 1390US5847428AIntegrated circuit gate conductor which uses layered spacers to produce a graded junctionADVANCED MICRO DEVICES INC·Filed 1996·Granted Dec 8, 1998·76 cites·8 claims
- 1489US6764908B1Narrow width CMOS devices fabricated on strained lattice semiconductor substrates with maximized NMOS and PMOS drive currentsADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 20, 2004·50 cites·20 claims
- 1589US6589847B1Tilted counter-doped implant to sharpen halo profileADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 8, 2003·47 cites·80 claims
- 1689US6162688AMethod of fabricating a transistor with a dielectric underlayer and device incorporating sameADVANCED MICRO DEVICES INC·Filed 1999·Granted Dec 19, 2000·80 cites·20 claims
- 1789US5930642ATransistor with buried insulative layer beneath the channel regionADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 27, 1999·104 cites·20 claims
- 1889US5888675AReticle that compensates for radiation-induced lens error in a photolithographic systemADVANCED MICRO DEVICES INC·Filed 1996·Granted Mar 30, 1999·68 cites·26 claims
- 1988US6258680B1Integrated circuit gate conductor which uses layered spacers to produce a graded junctionADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 10, 2001·67 cites·13 claims
- 2088US5710054AMethod of forming a shallow junction by diffusion from a silicon-based spacerADVANCED MICRO DEVICES INC·Filed 1996·Granted Jan 20, 1998·92 cites·57 claims
- 2187US6372587B1Angled halo implant tailoring using implant maskADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 16, 2002·39 cites·20 claims
- 2287US6323519B1Ultrathin, nitrogen-containing MOSFET sidewall spacers using low-temperature semiconductor fabrication processADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 27, 2001·90 cites·4 claims
- 2387US6259142B1Multiple split gate semiconductor device and fabrication methodADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 10, 2001·67 cites·9 claims
- 2487US5840451AIndividually controllable radiation sources for providing an image pattern in a photolithographic systemADVANCED MICRO DEVICES INC·Filed 1996·Granted Nov 24, 1998·61 cites·48 claims
- 2586US6833307B1Method for manufacturing a semiconductor component having an early halo implantADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 21, 2004·38 cites·10 claims
- 2686US5899732AMethod of implanting silicon through a polysilicon gate for punchthrough control of a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted May 4, 1999·83 cites·8 claims
- 2785US6187620B1Integrated circuit having sacrificial spacers for producing graded NMOS source/drain junctions possibly dissimilar from PMOS source/drain junctionsADVANCED MICRO DEVICES INC·Filed 1998·Granted Feb 13, 2001·54 cites·20 claims
- 2885US6114211ASemiconductor device with vertical halo region and methods of manufactureADVANCED MICRO DEVICES INC·Filed 1998·Granted Sep 5, 2000·62 cites·21 claims
- 2985US5943550AMethod of processing a semiconductor wafer for controlling drive currentADVANCED MICRO DEVICES INC·Filed 1996·Granted Aug 24, 1999·71 cites·20 claims
- 3085US5930634AMethod of making an IGFET with a multilevel gateADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 27, 1999·63 cites·48 claims
- 3184US6936506B1Strained-silicon devices with different silicon thicknessesADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 30, 2005·28 cites·14 claims
- 3284US6225151B1Nitrogen liner beneath transistor source/drain regions to retard dopant diffusionADVANCED MICRO DEVICES INC·Filed 1997·Granted May 1, 2001·68 cites·37 claims
- 3384US6201278B1Trench transistor with insulative spacersADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 13, 2001·48 cites·40 claims
- 3484US5445975ASemiconductor wafer with enhanced pre-process denudation and process-induced getteringADVANCED MICRO DEVICES INC·Filed 1994·Granted Aug 29, 1995·88 cites·1 claims
- 3583US6737332B1Semiconductor device formed over a multiple thickness buried oxide layer, and methods of making sameADVANCED MICRO DEVICES INC·Filed 2002·Granted May 18, 2004·30 cites·6 claims
- 3683US6300205B1Method of making a semiconductor device with self-aligned active, lightly-doped drain, and halo regionsADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 9, 2001·67 cites·23 claims
- 3783US6080629AIon implantation into a gate electrode layer using an implant profile displacement layerADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 27, 2000·51 cites·38 claims
- 3882US5766969AMultiple spacer formation/removal technique for forming a graded junctionADVANCED MICRO DEVICES INC·Filed 1996·Granted Jun 16, 1998·48 cites·16 claims
- 3981US6051865ATransistor having a barrier layer below a high permittivity gate dielectricADVANCED MICRO DEVICES INC·Filed 1998·Granted Apr 18, 2000·57 cites·15 claims
- 4081US5851891AIGFET method of forming with silicide contact on ultra-thin gateADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 22, 1998·42 cites·40 claims
- 4180US6166354ASystem and apparatus for in situ monitoring and control of annealing in semiconductor fabricationADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 26, 2000·37 cites·22 claims
- 4279US6197645B1Method of making an IGFET with elevated source/drain regions in close proximity to gate with sloped sidewallsADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 6, 2001·44 cites·18 claims
- 4379US6124610AIsotropically etching sidewall spacers to be used for both an NMOS source/drain implant and a PMOS LDD implantADVANCED MICRO DEVICES INC·Filed 1998·Granted Sep 26, 2000·37 cites·16 claims
- 4479US6104063AMultiple spacer formation/removal technique for forming a graded junctionADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 15, 2000·39 cites·19 claims
- 4579US5937299AMethod for forming an IGFET with silicide source/drain contacts in close proximity to a gate with sloped sidewallsADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 10, 1999·44 cites·20 claims
- 4679US5891787ASemiconductor fabrication employing implantation of excess atoms at the edges of a trench isolation structureADVANCED MICRO DEVICES INC·Filed 1997·Granted Apr 6, 1999·51 cites·17 claims
- 4779US5648286AMethod of making asymmetrical transistor with lightly doped drain region, heavily doped source and drain regions, and ultra-heavily doped source regionADVANCED MICRO DEVICES INC·Filed 1996·Granted Jul 15, 1997·38 cites·18 claims
- 4877US6949436B2Composite spacer liner for improved transistor performanceADVANCED MICRO DEVICES INC·Filed 2004·Granted Sep 27, 2005·19 cites·8 claims
- 4977US6884702B2Method of making an SOI semiconductor device having enhanced, self-aligned dielectric regions in the bulk silicon substrateADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 26, 2005·16 cites·23 claims
- 5077US5831306AAsymmetrical transistor with lightly doped drain region, heavily doped source and drain regions, and ultra-heavily doped source regionADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 3, 1998·35 cites·15 claims
Showing the top 50 of 155 patent records by PatentIndex Score.
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