Inventor · disambiguated record
Deyuan Xiao
Also filed as: XIAO DEYUAN
172 granted patents·61 pending applications·202 citations·filing 2006–2024
99Inventor score
Files withCHANGXIN MEMORY TECH INC102ZING SEMICONDUCTOR CORP39SEMICONDUCTOR MFG INT SHANGHAI CORP29XIAO DEYUAN18SIEN QINGDAO INTEGRATED CIRCUITS CO LTD12
Top patents by PatentIndex Score
233 records- 0196US12349332B2Manufacturing method of semiconductor structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 1, 2025·2 cites·12 claims
- 0296US12310005B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted May 20, 2025·2 cites·20 claims
- 0396US12137550B2Semiconductor structure with a first lower electrode layer and a second lower electrode layer and method for manufacturing sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted Nov 5, 2024·4 cites·16 claims
- 0495US9029211B2Nano field-effect vacuum tube and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted May 12, 2015·17 cites·14 claims
- 0594US12342524B2Method for fabricating semiconductor device and semiconductor deviceCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jun 24, 2025·2 cites·10 claims
- 0694US11637189B1Semiconductor structure and forming method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Apr 25, 2023·2 cites·15 claims
- 0793US8350298B2Hybrid material inversion mode GAA CMOSFETSHANGHAI INST MICROSYS & INF·Filed 2010·Granted Jan 8, 2013·26 cites·18 claims
- 0892US9834861B2Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereofZING SEMICONDUCTOR CORP·Filed 2016·Granted Dec 5, 2017·3 cites·10 claims
- 0991US9972637B2Metal-ono-vacuum tube charge trap flash (VTCTF) nonvolatile memory and the method for making the sameZING SEMICONDUCTOR CORP·Filed 2017·Granted May 15, 2018·5 cites·5 claims
- 1090US12396161B2Semiconductor structure including bit line compose of a metal layer and a metal silicide layer and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Aug 19, 2025·1 cites·13 claims
- 1190US11398490B2Stacked neural device structure and manufacturing method thereofSIEN QINGDAO INTEGRATED CIRCUITS CO LTD·Filed 2020·Granted Jul 26, 2022·2 cites·9 claims
- 1290US10916544B2Gate-all-around quantum well complementary inverter and method of making the sameSIEN QINGDAO INTEGRATED CIRCUITS CO LTD·Filed 2019·Granted Feb 9, 2021·6 cites·16 claims
- 1390US9093508B1Nano field-effect vacuum tubeSEMICONDUCTOR MFG INT SHANGHAI·Filed 2015·Granted Jul 28, 2015·6 cites·10 claims
- 1488US11854862B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Dec 26, 2023·1 cites·7 claims
- 1588US9715987B2Semiconductor device and related manufacturing methodSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2014·Granted Jul 25, 2017·6 cites·12 claims
- 1687US9647067B1FinFET and fabrication method thereofZING SEMICONDUCTOR CORP·Filed 2016·Granted May 9, 2017·5 cites·16 claims
- 1787US9577063B2Bipolar transistor, band-gap reference circuit and virtual ground reference circuit and methods of fabricating thereofSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2016·Granted Feb 21, 2017·5 cites·16 claims
- 1884US10100431B2Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereofZING SEMICONDUCTOR CORP·Filed 2016·Granted Oct 16, 2018·2 cites·9 claims
- 1983US10026850B2Transistor and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted Jul 17, 2018·2 cites·8 claims
- 2083US9153585B2Tunneling field effect transistor device and related manufacturing methodSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Oct 6, 2015·4 cites·9 claims
- 2182US8912545B2Nanowires, nanowire fielde-effect transistors and fabrication methodSEMICONDUCTOR MFG INT CORP·Filed 2013·Granted Dec 16, 2014·5 cites·14 claims
- 2282US8274118B2Hybrid material accumulation mode GAA CMOSFETXIAO DEYUAN·Filed 2010·Granted Sep 25, 2012·7 cites·18 claims
- 2381US9773891B1FinFET and fabrication method thereofZING SEMICONDUCTOR CORP·Filed 2016·Granted Sep 26, 2017·3 cites·18 claims
- 2481US9530977B2Tunneling nanotube field effect transistor and manufacturing method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2014·Granted Dec 27, 2016·3 cites·11 claims
- 2580US9837517B2Method for making III-V nanowire quantum well transistorZING SEMICONDUCTOR CORP·Filed 2017·Granted Dec 5, 2017·2 cites·8 claims
- 2680US9608115B2FinFET having buffer layer between channel and substrateSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Mar 28, 2017·2 cites·20 claims
- 2779US9779999B2Complementary nanowire semiconductor device and fabrication method thereofZING SEMICONDUCTOR CORP·Filed 2016·Granted Oct 3, 2017·2 cites·8 claims
- 2879US9673322B2Vertical junctionless transistor device and manufacturing methodsSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Jun 6, 2017·2 cites·11 claims
- 2979US8233312B2DRAM cell utilizing floating body effect and manufacturing method thereofXIAO DEYUAN·Filed 2010·Granted Jul 31, 2012·6 cites·9 claims
- 3078US10373880B2Semiconductor device and related manufacturing methodSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted Aug 6, 2019·2 cites·7 claims
- 3178US9640615B1Method for making III-V nanowire quantum well transistorZING SEMICONDUCTOR CORP·Filed 2016·Granted May 2, 2017·2 cites·11 claims
- 3277US10083879B2Semiconductor nanowire device and fabrication method thereofSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2016·Granted Sep 25, 2018·2 cites·20 claims
- 3377US9202762B2Hybrid integrated semiconductor tri-gate and split dual-gate FinFET devices and method for manufacturingXIAO DEYUAN·Filed 2011·Granted Dec 1, 2015·5 cites·18 claims
- 3477US8409962B2Manufacturing method of copper interconnection structure with MIM capacitorXIAO DEYUAN·Filed 2010·Granted Apr 2, 2013·5 cites·12 claims
- 3574US10923399B2Hybrid integrated semiconductor tri-gate and split dual-gate FinFET devices and method for manufacturingSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2018·Granted Feb 16, 2021·1 cites·20 claims
- 3674US10720332B2Transistor and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2018·Granted Jul 21, 2020·1 cites·19 claims
- 3774US9425101B2FinFET fabrication method using buffer layers between channel and semiconductor substrateSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2014·Granted Aug 23, 2016·2 cites·20 claims
- 3874US8354721B2Gate-all-around CMOSFET devicesSHANGHAI INST MICROSYS & INF·Filed 2010·Granted Jan 15, 2013·4 cites·20 claims
- 3973US8274119B2Hybrid material accumulation mode GAA CMOSFETXIAO DEYUAN·Filed 2010·Granted Sep 25, 2012·4 cites·18 claims
- 4072US8451646B2Resistive random access memory and the method of operating the sameCHI MIN-HWA·Filed 2010·Granted May 28, 2013·5 cites·10 claims
- 4172US7582517B2Method for making split dual gate field effect transistorSEMICONDUCTOR MFG INT SHANGHAI·Filed 2006·Granted Sep 1, 2009·5 cites·23 claims
- 4271US11049949B2Gate-all-around gradient-doped nano-sheet complementary inverter and method of making the sameSIEN QINGDAO INTEGRATED CIRCUITS CO LTD·Filed 2019·Granted Jun 29, 2021·1 cites·8 claims
- 4371US11049857B2Nanosheet CMOS semiconductor device and the method of manufacturing the sameSIEN QINGDAO INTEGRATED CIRCUITS CO LTD·Filed 2019·Granted Jun 29, 2021·1 cites·24 claims
- 4471US8093114B2Method for making split dual gate field effect transistorXIAO DEYUAN·Filed 2009·Granted Jan 10, 2012·4 cites·3 claims
- 4570US10043671B2Transistor and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Aug 7, 2018·1 cites·11 claims
- 4670US9721846B1Hybrid integration fabrication of nanowire gate-all-around GE PFET and polygonal III-V PFET CMOS deviceZING SEMICONDUCTOR CORP·Filed 2016·Granted Aug 1, 2017·1 cites·5 claims
- 4770US9590031B2Fin-type field effect transistor and manufacturing method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Mar 7, 2017·2 cites·18 claims
- 4868US9716178B2Fin field effect transistor and fabricating method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Jul 25, 2017·1 cites·20 claims
- 4968US8833431B2Aluminum alloy material and method of manufacturing aluminum alloy backboardXIAO DEYUAN·Filed 2010·Granted Sep 16, 2014·3 cites·4 claims
- 5067US9634133B1Method of forming fin structure on patterned substrate that includes depositing quantum well layer over fin structureZING SEMICONDUCTOR CORP·Filed 2016·Granted Apr 25, 2017·1 cites·25 claims
Showing the top 50 of 233 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →