Inventor · disambiguated record
Dipanjan Basu
Also filed as: BASU DIPANJAN
13 granted patents·6 pending applications·34 citations·filing 2012–2025
84Inventor score
Top patents by PatentIndex Score
19 records- 0196US8785909B2Non-planar semiconductor device having channel region with low band-gap cladding layerRADOSAVLJEVIC MARKO·Filed 2012·Granted Jul 22, 2014·28 cites·31 claims
- 0290US11094716B2Source contact and channel interface to reduce body charging from band-to-band tunnelingINTEL CORP·Filed 2018·Granted Aug 17, 2021·6 cites·20 claims
- 0378US2025349342A1Staggered read recovery for improved read window budget in a three dimensional (3d) nand memory arrayIntel NDTM US LLC·Filed 2025·Application pending·0 cites
- 0472US2024258427A1Source or drain structures for germanium n-channel devicesINTEL CORP·Filed 2024·Application pending·0 cites
- 0564US2022109072A1Reducing band-to-band tunneling in semiconductor devicesINTEL CORP·Filed 2021·Application pending·0 cites
- 0663US12484225B2Metal hybrid charge storage structure for memoryIntel NDTM US LLC·Filed 2021·Granted Nov 25, 2025·0 cites·20 claims
- 0757US12362002B2Staggered read recovery for improved read window budget in a three dimensional (3D) NAND memory arrayIntel NDTM US LLC·Filed 2021·Granted Jul 15, 2025·0 cites·16 claims
- 0855US11973143B2Source or drain structures for germanium N-channel devicesINTEL CORP·Filed 2019·Granted Apr 30, 2024·0 cites·15 claims
- 0955US11233148B2Reducing band-to-band tunneling in semiconductor devicesINTEL CORP·Filed 2017·Granted Jan 25, 2022·0 cites·25 claims
- 1053US2024184964A1Parameter calibration for simulation of a transistor designSYNOPSYS INC·Filed 2023·Application pending·0 cites
- 1149US2023033086A1Varying channel width in three-dimensional memory arrayINTEL CORP·Filed 2020·Application pending·0 cites
- 1248US11362188B2Field effect transistors with reduced electric field by thickening dielectric on the drain sideINTEL CORP·Filed 2017·Granted Jun 14, 2022·0 cites·10 claims
- 1346US10985263B2Thin film cap to lower leakage in low band gap material devicesINTEL CORP·Filed 2016·Granted Apr 20, 2021·0 cites·19 claims
- 1445US10930738B2Sub-fin leakage control in semicondcutor devicesINTEL CORP·Filed 2017·Granted Feb 23, 2021·0 cites·20 claims
- 1544US11575005B2Asymmetrical semiconductor nanowire field-effect transistorINTEL CORP·Filed 2018·Granted Feb 7, 2023·0 cites·17 claims
- 1644US11024713B2Gradient doping to lower leakage in low band gap material devicesINTEL CORP·Filed 2016·Granted Jun 1, 2021·0 cites·16 claims
- 1743US11424335B2Group III-V semiconductor devices having dual workfunction gate electrodesINTEL CORP·Filed 2017·Granted Aug 23, 2022·0 cites·21 claims
- 1842US12191349B2Reducing off-state leakage in semiconductor devicesINTEL CORP·Filed 2017·Granted Jan 7, 2025·0 cites·25 claims
- 1940US2020144374A1Transistor with wide bandgap channel and narrow bandgap source/drainINTEL CORP·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →