Inventor · disambiguated record
Dim-Lee Kwong
Also filed as: KWONG DIM-LEE
27 granted patents·5 pending applications·1,508 citations·filing 1988–2009
98Inventor score
Top patents by PatentIndex Score
32 records- 0198US6225168B1Semiconductor device having metal gate electrode and titanium or tantalum nitride gate dielectric barrier layer and process of fabrication thereofADVANCED MICRO DEVICES INC·Filed 1998·Granted May 1, 2001·239 cites·20 claims
- 0296US6015739AMethod of making gate dielectric for sub-half micron MOS transistors including a graded dielectric constantADVANCED MICRO DEVICES INC·Filed 1997·Granted Jan 18, 2000·166 cites·17 claims
- 0392US5578848AUltra thin dielectric for electronic devices and method of making sameUNIV TEXAS·Filed 1995·Granted Nov 26, 1996·124 cites·2 claims
- 0491US5674788AMethod of forming high pressure silicon oxynitride gate dielectricsADVANCED MICRO DEVICES INC·Filed 1995·Granted Oct 7, 1997·151 cites·18 claims
- 0590US6245652B1Method of forming ultra thin gate dielectric for high performance semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 12, 2001·57 cites·32 claims
- 0690US6115233AIntegrated circuit device having a capacitor with the dielectric peripheral region being greater than the dielectric central regionLSI LOGIC CORP·Filed 1996·Granted Sep 5, 2000·78 cites·25 claims
- 0790US5397720AMethod of making MOS transistor having improved oxynitride dielectricUNIV TEXAS·Filed 1994·Granted Mar 14, 1995·79 cites·18 claims
- 0888US6211096B1Tunable dielectric constant oxide and method of manufactureLSI LOGIC CORP·Filed 1997·Granted Apr 3, 2001·93 cites·3 claims
- 0987US5591681AMethod for achieving a highly reliable oxide filmADVANCED MICRO DEVICES INC·Filed 1994·Granted Jan 7, 1997·71 cites·32 claims
- 1081US6228779B1Ultra thin oxynitride and nitride/oxide stacked gate dielectrics fabricated by high pressure technologyNOVELLUS SYSTEMS INC·Filed 1998·Granted May 8, 2001·68 cites·11 claims
- 1179US7504329B2Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFETIMEC INTER UNI MICRO ELECTR·Filed 2006·Granted Mar 17, 2009·11 cites·28 claims
- 1278US6252283B1CMOS transistor design for shared N+/P+ electrode with enhanced device performanceADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 26, 2001·40 cites·10 claims
- 1376US6207995B1High K integration of gate dielectric with integrated spacer formation for high speed CMOSADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 27, 2001·36 cites·23 claims
- 1475US5679585AMethod for forming metal silicide on a semiconductor surface with minimal effect on pre-existing implantsADVANCED MICRO DEVICES INC·Filed 1996·Granted Oct 21, 1997·37 cites·24 claims
- 1574US6284586B1Integrated circuit device and method of making the same using chemical mechanical polishing to remove material in two layers following maskingLSI LOGIC CORP·Filed 1999·Granted Sep 4, 2001·29 cites·12 claims
- 1674US5541436AMOS transistor having improved oxynitride dielectricUNIV TEXAS·Filed 1994·Granted Jul 30, 1996·32 cites·5 claims
- 1773US4910165AMethod for forming epitaxial silicon on insulator structures using oxidized porous siliconNCR CO·Filed 1988·Granted Mar 20, 1990·39 cites·14 claims
- 1870US5478765AMethod of making an ultra thin dielectric for electronic devicesUNIV TEXAS·Filed 1994·Granted Dec 26, 1995·39 cites·9 claims
- 1966US5340770AMethod of making a shallow junction by using first and second SOG layersNCR CO·Filed 1992·Granted Aug 23, 1994·37 cites·20 claims
- 2064US7504328B2Schottky barrier source/drain n-mosfet using ytterbium silicideUNIV SINGAPORE·Filed 2005·Granted Mar 17, 2009·3 cites·7 claims
- 2162US6911707B2Ultrathin high-K gate dielectric with favorable interface properties for improved semiconductor device performanceADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 28, 2005·25 cites·33 claims
- 2261US6303520B1Silicon oxynitride filmMATTSON TECH INC·Filed 1998·Granted Oct 16, 2001·28 cites·10 claims
- 2358US6218720B1Semiconductor topography employing a nitrogenated shallow trench isolation structureADVANCED MICRO DEVICES INC·Filed 1998·Granted Apr 17, 2001·21 cites·16 claims
- 2452US6468856B2High charge storage density integrated circuit capacitorTEXAS INSTRUMENTS INC·Filed 2001·Granted Oct 22, 2002·3 cites·15 claims
- 2547US8319302B2Wafer arrangement and a method for manufacturing the wafer arrangementZHANG QINGXIN·Filed 2007·Granted Nov 27, 2012·0 cites·20 claims
- 2647US2009163005A1Schottky barrier source/drain N-MOSFET using ytterbium silicideUNIV SINGAPORE·Filed 2009·Application pending·0 cites
- 2746US2009179281A1Schottky barrier source/drain N-MOSFET using ytterbium silicideZHU SHIYANG·Filed 2009·Application pending·0 cites
- 2845US2006260676A1PhotodetectorGAO FEI·Filed 2006·Application pending·0 cites
- 2945US2008224236A1Metal gate electrode for semiconductor devicesUNIV SINGAPORE·Filed 2008·Application pending·0 cites
- 3043US2005285208A1Metal gate electrode for semiconductor devicesREN CHI·Filed 2005·Application pending·0 cites
- 3131US5340752AMethod for forming a bipolar transistor using doped SOGNCR CO·Filed 1992·Granted Aug 23, 1994·2 cites·15 claims
- 3224US7514360B2Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereofYU HONG YU·Filed 2004·Granted Apr 7, 2009·0 cites·24 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →