Schottky barrier source/drain N-MOSFET using ytterbium silicide

Abstract

An N-type Schottky barrier Source/Drain Transistor (N-SSDT) that uses ytterbium silicide (YbSi 2-x ) for the source and drain is described. The structure includes a suitable capping layer stack.

1 . A Schottky barrier source/drain MOSFET structure, comprising:
 on a layer of P-type silicon, a gate structure having a gate electrode on a layer of gate insulation; and   source and drain regions, that comprise ytterbium silicide, on opposing sides of said gate electrode.   
   
   
       2 . The structure described in  claim 1  wherein said layer of gate insulation is hafnium oxide. 
   
   
       3 . The structure described in  claim 2  wherein said layer of gate insulation is between about 3 and 10 nm thick. 
   
   
       4 . The structure described in  claim 1  wherein said gate electrode is hafnium nitride. 
   
   
       5 . The structure described in  claim 4  wherein said gate electrode is between about 20 and 400 nm thick. 
   
   
       6 . The structure described in  claim 1  wherein said layer of P-type silicon has a resistivity between about 0.1 and 50 ohm-cm.