Inventor · disambiguated record
Ming Li
Also filed as: LI MING · LI MING FU
21 granted patents·8 pending applications·604 citations·filing 2004–2022
95Inventor score
Files withSAMSUNG ELECTRONICS CO LTD13UNIV SINGAPORE3AGENCY SCIENCE TECH & RES2LAM RES CORP1LI MING1
Top patents by PatentIndex Score
29 records- 0198US7427788B2Multi bridge channel field effect transistors with nano-wire channels and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 23, 2008·145 cites·19 claims
- 0297US7332386B2Methods of fabricating fin field transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 19, 2008·56 cites·16 claims
- 0395US7374986B2Method of fabricating field effect transistor (FET) having wire channelsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 20, 2008·107 cites·20 claims
- 0495US7361545B2Field effect transistor with buried gate patternSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 22, 2008·26 cites·12 claims
- 0594US8815702B2Methods of manufacturing semiconductor devices having a support structure for an active layer patternSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 26, 2014·13 cites·23 claims
- 0694US7002175B1Method of making resonant tunneling diodes and CMOS backend-process-compatible three dimensional (3-D) integrationAGENCY SCIENCE TECH & RES·Filed 2004·Granted Feb 21, 2006·108 cites·40 claims
- 0793US7274051B2Field effect transistor (FET) having wire channels and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 25, 2007·51 cites·41 claims
- 0890US7396730B2Integrated circuit devices including an L-shaped depletion barrier layer adjacent opposite sides of a gate pattern and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 8, 2008·47 cites·12 claims
- 0990US7389664B1Electromagnetic forming device for sheet of materialMETAL IND RES & DEV CT·Filed 2007·Granted Jun 24, 2008·20 cites·14 claims
- 1087US8124961B2Single electron transistorSUK SUNG-DAE·Filed 2011·Granted Feb 28, 2012·10 cites·9 claims
- 1177US8528376B2Mold set for manufacturing case and the method thereofLI MING-FU·Filed 2010·Granted Sep 10, 2013·5 cites·13 claims
- 1276US7955932B2Single electron transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 7, 2011·6 cites·20 claims
- 1372US8426901B2Semiconductor devices having a support structure for an active layer patternOH CHANG-WOO·Filed 2011·Granted Apr 23, 2013·2 cites·10 claims
- 1472US7858457B2Methods of forming integrated circuit devices including a depletion barrier layer at source/drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Dec 28, 2010·3 cites·21 claims
- 1566US7989854B2Semiconductor devices having a support structure for an active layer patternSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 2, 2011·2 cites·19 claims
- 1664US7504328B2Schottky barrier source/drain n-mosfet using ytterbium silicideUNIV SINGAPORE·Filed 2005·Granted Mar 17, 2009·3 cites·7 claims
- 1756US8008141B2Method of fabricating a semiconductor device with multiple channelsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 30, 2011·0 cites·12 claims
- 1855US8680588B2Field effect transistor with buried gate patternLI MING·Filed 2008·Granted Mar 25, 2014·0 cites·16 claims
- 1952US2024014015A1C-shroud Modification For Plasma Uniformity Without Impacting Mechanical Strength Or Lifetime Of The C-shroudLAM RES CORP·Filed 2022·Application pending·0 cites
- 2051US7579657B2Semiconductor device with multiple channelsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 25, 2009·0 cites·9 claims
- 2147US2009163005A1Schottky barrier source/drain N-MOSFET using ytterbium silicideUNIV SINGAPORE·Filed 2009·Application pending·0 cites
- 2246US2009179281A1Schottky barrier source/drain N-MOSFET using ytterbium silicideZHU SHIYANG·Filed 2009·Application pending·0 cites
- 2345US2008224236A1Metal gate electrode for semiconductor devicesUNIV SINGAPORE·Filed 2008·Application pending·0 cites
- 2443US2005285208A1Metal gate electrode for semiconductor devicesREN CHI·Filed 2005·Application pending·0 cites
- 2539US2004245602A1Method of fabricating metal-insulator-metal capacitor (MIM) using lanthanide-doped HfO2Filed 2004·Application pending·0 cites
- 2634US11815155B2Zero-stiffness impact isolation deviceUNIV BEIHANG·Filed 2020·Granted Nov 14, 2023·0 cites·7 claims
- 2734US2005056827A1CMOS compatible low band offset double barrier resonant tunneling diodeAGENCY SCIENCE TECH & RES·Filed 2004·Application pending·0 cites
- 2832US2015213274A1Device and method of shielding region of display screenSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
- 2924US7514360B2Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereofYU HONG YU·Filed 2004·Granted Apr 7, 2009·0 cites·24 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →