Inventor · disambiguated record
Jagar Singh
Also filed as: SINGH JAGAR
94 granted patents·36 pending applications·297 citations·filing 2004–2024
99Inventor score
Files withGLOBALFOUNDRIES INC70GLOBALFOUNDRIES US INC40PSEMI CORP7MURATA MANUFACTURING CO5AGENCY SCIENCE TECH & RES2
Top patents by PatentIndex Score
130 records- 0196US10164006B1LDMOS FinFET structures with trench isolation in the drain extensionGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 25, 2018·17 cites·20 claims
- 0294US11967637B2Fin-based lateral bipolar junction transistor with reduced base resistance and methodGLOBALFOUNDRIES US INC·Filed 2022·Granted Apr 23, 2024·2 cites·20 claims
- 0394US7002175B1Method of making resonant tunneling diodes and CMOS backend-process-compatible three dimensional (3-D) integrationAGENCY SCIENCE TECH & RES·Filed 2004·Granted Feb 21, 2006·108 cites·40 claims
- 0493US9276088B1Method for making high voltage integrated circuit devices in a fin-type process and resulting devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Mar 1, 2016·13 cites·12 claims
- 0593US9263385B1Semiconductor fuses and fabrication methods thereofGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 16, 2016·9 cites·19 claims
- 0692US10236358B1Integration of gate structures and spacers with air gapsGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 19, 2019·7 cites·20 claims
- 0792US10121878B1LDMOS finFET structures with multiple gate structuresGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 6, 2018·7 cites·20 claims
- 0891US9773781B1Resistor and capacitor disposed directly upon a SAC cap of a gate structure of a semiconductor structureGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 26, 2017·8 cites·13 claims
- 0991US9324827B1Non-planar schottky diode and method of fabricationGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 26, 2016·13 cites·15 claims
- 1090US9704966B1Fin-based RF diodesGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 11, 2017·6 cites·12 claims
- 1190US9177951B2Three-dimensional electrostatic discharge semiconductor deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 3, 2015·7 cites·12 claims
- 1288US9876010B1Resistor disposed directly upon a sac cap of a gate structure of a semiconductor structureGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 23, 2018·6 cites·16 claims
- 1388US9520396B2Method for making high voltage integrated circuit devices in a fin-type process and resulting devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Dec 13, 2016·5 cites·18 claims
- 1487US11710771B2Non-self-aligned lateral bipolar junction transistorsGLOBALFOUNDRIES US INC·Filed 2021·Granted Jul 25, 2023·1 cites·20 claims
- 1586US9905668B2Bipolar junction transistors and methods of fabricationGLOBALFOUNDRIES INC·Filed 2016·Granted Feb 27, 2018·4 cites·20 claims
- 1686US9508795B2Methods of fabricating nanowire structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 29, 2016·5 cites·19 claims
- 1786US8476684B2Field effect transistors having improved breakdown voltages and methods of forming the sameCOYNE EDWARD JOHN·Filed 2010·Granted Jul 2, 2013·11 cites·19 claims
- 1885US11652142B2Lateral bipolar junction transistors having an emitter extension and a halo regionGLOBALFOUNDRIES US INC·Filed 2021·Granted May 16, 2023·1 cites·20 claims
- 1985US10276700B2Symmetrical lateral bipolar junction transistor and use of same in characterizing and protecting transistorsGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 30, 2019·4 cites·9 claims
- 2084US9437713B2Devices and methods of forming higher tunability FinFET varactorGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 6, 2016·7 cites·11 claims
- 2183US11575029B2Lateral bipolar junction transistor and methodGLOBALFOUNDRIES US INC·Filed 2021·Granted Feb 7, 2023·1 cites·20 claims
- 2283US9741713B1Parasitic lateral bipolar transistor with improved ideality and leakage currentsGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 22, 2017·3 cites·20 claims
- 2383US9330971B2Method for fabricating integrated circuits including contacts for metal resistorsGLOBALFOUNDRIES INC·Filed 2014·Granted May 3, 2016·6 cites·19 claims
- 2481US9230913B1Metallization layers configured for reduced parasitic capacitanceGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 5, 2016·6 cites·20 claims
- 2580US11152496B2IC structure base and inner E/C material on raised insulator, and methods to form sameGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 19, 2021·1 cites·20 claims
- 2680US10290712B1LDMOS finFET structures with shallow trench isolation inside the finGLOBALFOUNDRIES INC·Filed 2017·Granted May 14, 2019·3 cites·20 claims
- 2780US9966459B2Symmetrical lateral bipolar junction transistor and use of same in characterizing and protecting transistorsGLOBALFOUNDRIES INC·Filed 2014·Granted May 8, 2018·4 cites·5 claims
- 2879US10115719B2Integrated circuits with resistor structures formed from MIM capacitor material and methods for fabricating sameGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 30, 2018·3 cites·17 claims
- 2978US12336243B2Lateral bipolar transistor with gated collectorGLOBALFOUNDRIES US INC·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 3078US12159926B2Lateral bipolar transistorGLOBALFOUNDRIES US INC·Filed 2023·Granted Dec 3, 2024·0 cites·19 claims
- 3178US11133397B2Method for forming lateral heterojunction bipolar devices and the resulting devicesGLOBALFOUNDRIES US INC·Filed 2019·Granted Sep 28, 2021·2 cites·17 claims
- 3278US9960248B2Fin-based RF diodesGLOBALFOUNDRIES INC·Filed 2017·Granted May 1, 2018·2 cites·18 claims
- 3376US10056368B2Fin diode with increased junction areaGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 21, 2018·2 cites·10 claims
- 3476US10020386B1High-voltage and analog bipolar devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 10, 2018·2 cites·18 claims
- 3574US10510662B2Vertically oriented metal silicide containing e-fuse device and methods of making sameGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 17, 2019·1 cites·18 claims
- 3674US2024363741A1Lateral bipolar transistorsGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 3773US12074211B2Lateral bipolar transistorsGLOBALFOUNDRIES US INC·Filed 2022·Granted Aug 27, 2024·0 cites·20 claims
- 3873US10832842B2Insulating inductor conductors with air gap using energy evaporation material (EEM)GLOBALFOUNDRIES INC·Filed 2019·Granted Nov 10, 2020·0 cites·20 claims
- 3972US9418993B2Device and method for a LDMOS design for a FinFET integrated circuitGLOBALFOUNDRIES INC·Filed 2013·Granted Aug 16, 2016·3 cites·8 claims
- 4071US10593754B2SOI device structures with doped regions providing charge sinkingGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 17, 2020·1 cites·19 claims
- 4171US9666717B2Split well zero threshold voltage field effect transistor for integrated circuitsGLOBALFOUNDRIES INC·Filed 2014·Granted May 30, 2017·2 cites·16 claims
- 4271US9455316B2Three-dimensional electrostatic discharge semiconductor deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Sep 27, 2016·1 cites·6 claims
- 4370US9620587B2Three-dimensional electrostatic discharge semiconductor deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 11, 2017·1 cites·7 claims
- 4470US9508743B2Dual three-dimensional and RF semiconductor devices using local SOIGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 29, 2016·2 cites·12 claims
- 4569US11810969B2Lateral bipolar transistorGLOBALFOUNDRIES US INC·Filed 2021·Granted Nov 7, 2023·0 cites·19 claims
- 4669US10236367B2Bipolar semiconductor device with silicon alloy region in silicon well and method for makingGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 19, 2019·1 cites·20 claims
- 4769US9601428B2Semiconductor fuses with nanowire fuse links and fabrication methods thereofGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 21, 2017·1 cites·12 claims
- 4868US2024313081A1Low Leakage Replacement Metal Gate FETMURATA MANUFACTURING CO·Filed 2023·Application pending·0 cites
- 4967US11935923B2Lateral bipolar transistor with gated collectorGLOBALFOUNDRIES US INC·Filed 2021·Granted Mar 19, 2024·0 cites·15 claims
- 5066US11508810B2Diode structuresGLOBALFOUNDRIES INC·Filed 2020·Granted Nov 22, 2022·0 cites·20 claims
Showing the top 50 of 130 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →