Inventor · disambiguated record
Dianne L. Lacey
Also filed as: LACEY DIANNE L
11 granted patents·4 pending applications·243 citations·filing 1987–2009
91Inventor score
Top patents by PatentIndex Score
15 records- 0196US6982230B2Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structuresIBM·Filed 2002·Granted Jan 3, 2006·112 cites·14 claims
- 0284US6573197B2Thermally stable poly-Si/high dielectric constant material interfacesIBM·Filed 2001·Granted Jun 3, 2003·32 cites·39 claims
- 0380US6798953B1Guides lithographically fabricated on semiconductor devicesIBM·Filed 2000·Granted Sep 28, 2004·23 cites·21 claims
- 0475US7115959B2Method of forming metal/high-k gate stacks with high mobilityIBM·Filed 2004·Granted Oct 3, 2006·17 cites·26 claims
- 0572US7667277B2TiC as a thermally stable p-metal carbide on high k SiO2 gate stacksIBM·Filed 2005·Granted Feb 23, 2010·4 cites·18 claims
- 0672US4859253AMethod for passivating a compound semiconductor surface and device having improved semiconductor-insulator interfaceIBM·Filed 1988·Granted Aug 22, 1989·39 cites·34 claims
- 0769US8288237B2TiC as a thermally stable p-metal carbide on high k SiO2 gate stacksCALLEGARI ALESSANDRO C·Filed 2009·Granted Oct 16, 2012·5 cites·14 claims
- 0860US7521346B2Method of forming HfSiN metal for n-FET applicationsIBM·Filed 2007·Granted Apr 21, 2009·1 cites·1 claims
- 0952US7566938B2Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structuresIBM·Filed 2005·Granted Jul 28, 2009·0 cites·13 claims
- 1051US2008245658A1METHOD OF FORMING HfSiN METAL FOR n-FET APPLICATIONSIBM·Filed 2008·Application pending·0 cites
- 1149US8153514B2Method of forming metal/high-κ gate stacks with high mobilityANDREONI WANDA·Filed 2008·Granted Apr 10, 2012·0 cites·5 claims
- 1246US2006151846A1Method of forming HfSiN metal for n-FET applicationsIBM·Filed 2005·Application pending·0 cites
- 1345US4853346AOhmic contacts for semiconductor devices and method for forming ohmic contactsIBM·Filed 1987·Granted Aug 1, 1989·10 cites·27 claims
- 1444US2006289903A1Method of forming metal/high-k gate stacks with high mobilityANDREONI WANDA·Filed 2006·Application pending·0 cites
- 1539US2005082624A1Germanate gate dielectrics for semiconductor devicesFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →