Inventor · disambiguated record
Didier Landru
Also filed as: LANDRU DIDIER
56 granted patents·17 pending applications·750 citations·filing 2008–2024
98Inventor score
Files withSOITEC SILICON ON INSULATOR51LANDRU DIDIER9COMMISSARIAT ENERGIE ATOMIQUE6SADAKA MARIAM2BOURDELLE KONSTANTIN1
Top patents by PatentIndex Score
73 records- 0198US9224704B2Process for realizing a connecting structureLANDRU DIDIER·Filed 2011·Granted Dec 29, 2015·229 cites·15 claims
- 0298US8716105B2Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures and intermediate structures formed using such methodsSADAKA MARIAM·Filed 2011·Granted May 6, 2014·219 cites·28 claims
- 0398US8501537B2Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures formed using such methodsSADAKA MARIAM·Filed 2011·Granted Aug 6, 2013·221 cites·18 claims
- 0491US9914233B2Device for separating two substratesSOITEC SILICON ON INSULATOR·Filed 2013·Granted Mar 13, 2018·12 cites·17 claims
- 0585US12490656B2Hybrid structure and a method for manufacturing the sameSOITEC SILICON ON INSULATOR·Filed 2024·Granted Dec 2, 2025·0 cites·15 claims
- 0683US11349065B2Method for manufacturing a hybrid structureSOITEC SILICON ON INSULATOR·Filed 2016·Granted May 31, 2022·3 cites·14 claims
- 0782US12094759B2Method for transferring blocks from a donor substrate onto a receiver substrate by implanting ions in the donor substrate through a mask, bonding the donor substrate to the receiver substrate, and detaching the donor substrate along an embrittlement planeSOITEC SILICON ON INSULATOR·Filed 2023·Granted Sep 17, 2024·0 cites·14 claims
- 0882US10250282B2Structure for radiofrequency applicationsSOITEC SILICON ON INSULATOR·Filed 2015·Granted Apr 2, 2019·3 cites·19 claims
- 0981US8735946B2Substrate having a charged zone in an insulating buried layerSOITEC SILICON ON INSULATOR·Filed 2013·Granted May 27, 2014·4 cites·16 claims
- 1081US8614501B2Method of producing a layer of cavitiesLANDRU DIDIER·Filed 2010·Granted Dec 24, 2013·6 cites·20 claims
- 1180US12165900B2Method of mechanical separation for a double layer transferSOITEC SILICON ON INSULATOR·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 1280US2025022748A1Method for transferring blocks from a donor substrate onto a receiver substrate by implanting ions in the donor substrate through a mask, bonding the donor substrate to the receiver substrate, and detaching the donorSOITEC SILICON ON INSULATOR·Filed 2024·Application pending·0 cites
- 1379US8429960B2Process for measuring an adhesion energy, and associated substratesLANDRU DIDIER·Filed 2010·Granted Apr 30, 2013·3 cites·19 claims
- 1477US11930710B2Hybrid structure and a method for manufacturing the sameSOITEC SILICON ON INSULATOR·Filed 2022·Granted Mar 12, 2024·0 cites·19 claims
- 1576US8535996B2Substrate having a charged zone in an insulating buried layerSHAHEEN MOHAMAD·Filed 2008·Granted Sep 17, 2013·6 cites·11 claims
- 1675US7892951B2SOI substrates with a fine buried insulating layerSOITEC SILICON ON INSULATOR·Filed 2008·Granted Feb 22, 2011·6 cites·20 claims
- 1773US8951887B2Process for fabricating a semiconductor structure employing a temporary bondLETERTRE FABRICE·Filed 2012·Granted Feb 10, 2015·3 cites·16 claims
- 1873US2024222158A1System for fracturing a plurality of wafer assembliesSOITEC SILICON ON INSULATOR·Filed 2024·Application pending·0 cites
- 1972US9437473B2Method for separating at least two substrates along a selected interfaceSOITEC SILICON ON INSULATOR·Filed 2013·Granted Sep 6, 2016·2 cites·20 claims
- 2072US9136113B2Process to dissolve the oxide layer in the peripheral ring of a structure of semiconductor-on-insulator typeSOITEC SILICON ON INSULATOR·Filed 2013·Granted Sep 15, 2015·3 cites·18 claims
- 2172US8497190B2Process for treating a semiconductor-on-insulator structureLANDRU DIDIER·Filed 2011·Granted Jul 30, 2013·4 cites·21 claims
- 2271US11742233B2Method of mechanical separation for a double layer transferSOITEC SILICON ON INSULATOR·Filed 2020·Granted Aug 29, 2023·0 cites·12 claims
- 2370US8623740B2Method of detaching semi-conductor layers at low temperatureLANDRU DIDIER·Filed 2009·Granted Jan 7, 2014·6 cites·20 claims
- 2469US8324072B2Process for locally dissolving the oxide layer in a semiconductor-on-insulator type structureVEYTIZOU CHRISTELLE·Filed 2009·Granted Dec 4, 2012·5 cites·14 claims
- 2568US11776843B2Method for transferring blocks from a donor substrate onto a receiver substrate by implanting ions in the donor substrate through a mask, bonding the donor substrate to the receiver substrate, and detaching the donor substrate along an embrittlement planeSOITEC SILICON ON INSULATOR·Filed 2020·Granted Oct 3, 2023·0 cites·18 claims
- 2667US9198294B2Electronic device for radiofrequency or power applications and process for manufacturing such a deviceLANDRU DIDIER·Filed 2011·Granted Nov 24, 2015·3 cites·11 claims
- 2767US8507332B2Method for manufacturing componentsRIOU GREGORY·Filed 2010·Granted Aug 13, 2013·3 cites·24 claims
- 2866US11670540B2Substrates including useful layersSOITEC SILICON ON INSULATOR·Filed 2021·Granted Jun 6, 2023·0 cites·18 claims
- 2966US8513092B2Method for producing a stack of semi-conductor thin filmsLANDRU DIDIER·Filed 2009·Granted Aug 20, 2013·3 cites·14 claims
- 3065US11742817B2Process for transferring a thin layer to a support substrate that have different thermal expansion coefficientsSOITEC SILICON ON INSULATOR·Filed 2018·Granted Aug 29, 2023·1 cites·17 claims
- 3164US9607879B2Process for fabrication of a structure with a view to a subsequent separationSOITEC SILICON ON INSULATOR·Filed 2013·Granted Mar 28, 2017·1 cites·20 claims
- 3264US2023353115A1Process for transferring a thin layer to a support substrate that have different thermal expansion coefficientsSOITEC SILICON ON INSULATOR·Filed 2023·Application pending·0 cites
- 3363US12002690B2System for fracturing a plurality of wafer assembliesSOITEC SILICON ON INSULATOR·Filed 2020·Granted Jun 4, 2024·0 cites·20 claims
- 3463US10220603B2Method for separating a layer from a composite structureLANDRU DIDIER·Filed 2012·Granted Mar 5, 2019·1 cites·15 claims
- 3557US9799549B2Process for manufacturing a composite structureSOITEC SILICON ON INSULATOR·Filed 2014·Granted Oct 24, 2017·1 cites·12 claims
- 3655US10910250B2Method of mechanical separation for a double layer transferSOITEC SILICON ON INSULATOR·Filed 2016·Granted Feb 2, 2021·0 cites·17 claims
- 3755US9875914B2Process for manufacturing a plurality of structuresSOITEC SILICON ON INSULATOR·Filed 2014·Granted Jan 23, 2018·1 cites·12 claims
- 3855US9718261B2Assembly process of two substratesSOITEC SILICON ON INSULATOR·Filed 2015·Granted Aug 1, 2017·1 cites·20 claims
- 3954US2025137928A1Method for monitoring embrittlement of an interface between a substrate and layer and a device enabling such monitoringCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Application pending·0 cites
- 4053US10093086B2Method for separating at least two substrates along a selected interfaceSOITEC SILICON ON INSULATOR·Filed 2016·Granted Oct 9, 2018·0 cites·20 claims
- 4153US9514960B2Method for dissolving a silicon dioxide layerSOITEC SILICON ON INSULATOR·Filed 2014·Granted Dec 6, 2016·0 cites·20 claims
- 4253US2014225182A1Substrate having a charged zone in an insulating buried layerSOITEC SILICON ON INSULATOR·Filed 2014·Application pending·0 cites
- 4352US10950491B2Method for transferring a useful layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Mar 16, 2021·0 cites·18 claims
- 4452US2025210410A1Method for transferring a thin film onto a support substrateSOITEC SILICON ON INSULATOR·Filed 2023·Application pending·0 cites
- 4552US2025201625A1Method for transferring a thin film onto a support substrateSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 4651US2025391704A1Method for transferring a thin layer onto a support substrateSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 4750US12417942B2Process for hydrophilically bonding substratesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Sep 16, 2025·0 cites·15 claims
- 4850US12142517B2Method for transferring a useful layer from a donor substrate onto a support substrate by applying a predetermined stressSOITEC SILICON ON INSULATOR·Filed 2020·Granted Nov 12, 2024·0 cites·20 claims
- 4950US12002697B2Method for detecting the splitting of a substrate weakened by implanting atomic speciesSOITEC SILICON ON INSULATOR·Filed 2019·Granted Jun 4, 2024·0 cites·20 claims
- 5050US2011275226A1Process to dissolve the oxide layer in the peripheral ring of a structure of semiconductor-on-insulator typeLANDRU DIDIER·Filed 2009·Application pending·0 cites
Showing the top 50 of 73 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →