Inventor · disambiguated record
Dimitrios Pavlopoulos
Also filed as: Pavlopoulos Dimitrios
16 granted patents·7 pending applications·93 citations·filing 2015–2024
91Inventor score
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23 records- 0197US10283520B2Elevationally-extending string of memory cells individually comprising a programmable charge storage transistor and method of forming an elevationally-extending string of memory cells individually comprising a programmable charge storage transistorMICRON TECHNOLOGY INC·Filed 2016·Granted May 7, 2019·20 cites·31 claims
- 0296US10388665B1Methods of forming an array of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stackMICRON TECHNOLOGY INC·Filed 2018·Granted Aug 20, 2019·46 cites·22 claims
- 0394US10014311B2Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysiliconMICRON TECHNOLOGY INC·Filed 2016·Granted Jul 3, 2018·9 cites·15 claims
- 0494US9761599B2Integrated structures containing vertically-stacked memory cellsMICRON TECHNOLOGY INC·Filed 2015·Granted Sep 12, 2017·9 cites·22 claims
- 0588US10446681B2NAND memory arrays, and devices comprising semiconductor channel material and nitrogenMICRON TECHNOLOGY INC·Filed 2017·Granted Oct 15, 2019·4 cites·10 claims
- 0686US10381365B2Integrated structures containing vertically-stacked memory cellsMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 13, 2019·3 cites·5 claims
- 0785US11404571B2Methods of forming NAND memory arraysMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 2, 2022·1 cites·12 claims
- 0873US11621270B2Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysiliconMICRON TECHNOLOGY INC·Filed 2021·Granted Apr 4, 2023·0 cites·9 claims
- 0971US11309321B2Integrated structures containing vertically-stacked memory cellsMICRON TECHNOLOGY INC·Filed 2020·Granted Apr 19, 2022·0 cites·9 claims
- 1065US11329062B2Memory arrays and methods used in forming a memory arrayMICRON TECHNOLOGY INC·Filed 2018·Granted May 10, 2022·1 cites·19 claims
- 1165US11094705B2Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysiliconMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 17, 2021·0 cites·15 claims
- 1264US10892268B2Integrated structures containing vertically-stacked memory cellsMICRON TECHNOLOGY INC·Filed 2019·Granted Jan 12, 2021·0 cites·3 claims
- 1364US10854747B2NAND memory arrays, devices comprising semiconductor channel material and nitrogen, and methods of forming NAND memory arraysMICRON TECHNOLOGY INC·Filed 2019·Granted Dec 1, 2020·0 cites·4 claims
- 1461US10381367B2Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysiliconMICRON TECHNOLOGY INC·Filed 2018·Granted Aug 13, 2019·0 cites·15 claims
- 1559US2025132147A1Methods for treatment of high-k materials to reduce leakage current and increase capacitanceAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1657US10658382B2Elevationally-extending string of memory cells individually comprising a programmable charge storage transistor and method of forming an elevationally-extending string of memory cells individually comprising a programmable charge storage transistorMICRON TECHNOLOGY INC·Filed 2019·Granted May 19, 2020·0 cites·30 claims
- 1757US10586807B2Arrays of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stacksMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 10, 2020·0 cites·14 claims
- 1857US2025364220A1Bilayer plasma oxidation processesAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1957US2024035195A1Methods, systems, and apparatus for forming layers having single crystalline structuresAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2055US2024242962A1Bottom thick oxidation growth in high aspect ratio featuresAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2152US2023309300A1Electrical improvements for 3d nandAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 2249US2023033086A1Varying channel width in three-dimensional memory arrayINTEL CORP·Filed 2020·Application pending·0 cites
- 2342US2023395729A1Memory devices with gradient-doped control gate materialINTEL CORP·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →