Inventor · disambiguated record
Dian Sugiarto
Also filed as: PARK SOHYUN · SUGIARTO DIAN
25 granted patents·2 pending applications·1,045 citations·filing 1996–2008
97Inventor score
Top patents by PatentIndex Score
27 records- 0197US6764958B1Method of depositing dielectric filmsAPPLIED MATERIALS INC·Filed 2000·Granted Jul 20, 2004·314 cites·45 claims
- 0296US6486082B1CVD plasma assisted lower dielectric constant sicoh filmAPPLIED MATERIALS INC·Filed 2001·Granted Nov 26, 2002·80 cites·30 claims
- 0395US6258735B1Method for using bypass lines to stabilize gas flow and maintain plasma inside a deposition chamberAPPLIED MATERIALS INC·Filed 2000·Granted Jul 10, 2001·84 cites·23 claims
- 0493US7745328B2Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)APPLIED MATERIALS INC·Filed 2008·Granted Jun 29, 2010·12 cites·5 claims
- 0592US7030041B2Adhesion improvement for low k dielectricsAPPLIED MATERIALS INC·Filed 2004·Granted Apr 18, 2006·45 cites·20 claims
- 0691US7465659B2Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)APPLIED MATERIALS INC·Filed 2006·Granted Dec 16, 2008·8 cites·12 claims
- 0791US6514857B1Damascene structure fabricated using a layer of silicon-based photoresist materialAPPLIED MATERIALS INC·Filed 2001·Granted Feb 4, 2003·57 cites·16 claims
- 0891US6204168B1Damascene structure fabricated using a layer of silicon-based photoresist materialAPPLIED MATERIALS INC·Filed 1998·Granted Mar 20, 2001·113 cites·9 claims
- 0990US6077764AProcess for depositing high deposition rate halogen-doped silicon oxide layerAPPLIED MATERIALS INC·Filed 1997·Granted Jun 20, 2000·91 cites·33 claims
- 1088US6838393B2Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbideAPPLIED MATERIALS INC·Filed 2002·Granted Jan 4, 2005·24 cites·27 claims
- 1186US6632735B2Method of depositing low dielectric constant carbon doped silicon oxideAPPLIED MATERIALS INC·Filed 2001·Granted Oct 14, 2003·37 cites·13 claims
- 1285US7008484B2Method and apparatus for deposition of low dielectric constant materialsAPPLIED MATERIALS INC·Filed 2002·Granted Mar 7, 2006·19 cites·15 claims
- 1385US6395092B1Apparatus for depositing high deposition rate halogen-doped silicon oxide layerAPPLIED MATERIALS INC·Filed 2000·Granted May 28, 2002·30 cites·19 claims
- 1481US5885751AMethod and apparatus for depositing deep UV photoresist filmsAPPLIED MATERIALS INC·Filed 1996·Granted Mar 23, 1999·46 cites·7 claims
- 1579US7117064B2Method of depositing dielectric filmsAPPLIED MATERIALS INC·Filed 2006·Granted Oct 3, 2006·5 cites·20 claims
- 1675US7153787B2CVD plasma assisted lower dielectric constant SICOH filmAPPLIED MATERIALS INC·Filed 2005·Granted Dec 26, 2006·3 cites·20 claims
- 1775US6825562B2Damascene structure fabricated using a layer of silicon-based photoresist materialAPPLIED MATERIALS INC·Filed 2002·Granted Nov 30, 2004·14 cites·9 claims
- 1872US7459404B2Adhesion improvement for low k dielectricsAPPLIED MATERIALS INC·Filed 2006·Granted Dec 2, 2008·2 cites·16 claims
- 1971US7157384B2Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)APPLIED MATERIALS INC·Filed 2004·Granted Jan 2, 2007·7 cites·20 claims
- 2067US6589715B2Process for depositing and developing a plasma polymerized organosilicon photoresist filmFRANCE TELECOM·Filed 2001·Granted Jul 8, 2003·10 cites·17 claims
- 2165US7001850B2Method of depositing dielectric filmsAPPLIED MATERIALS INC·Filed 2004·Granted Feb 21, 2006·7 cites·32 claims
- 2264US6943127B2CVD plasma assisted lower dielectric constant SICOH filmAPPLIED MATERIALS INC·Filed 2002·Granted Sep 13, 2005·6 cites·22 claims
- 2363US6911403B2Methods of reducing plasma-induced damage for advanced plasma CVD dielectricsAPPLIED MATERIALS INC·Filed 2003·Granted Jun 28, 2005·5 cites·31 claims
- 2463US6090530AMethod and apparatus for depositing deep UV photoresist filmsAPPLIED MATERIALS INC·Filed 1998·Granted Jul 18, 2000·15 cites·6 claims
- 2553US2006144334A1Method and apparatus for deposition of low dielectric constant materialsAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 2647US6238844B1Process for depositing a plasma polymerized organosilicon photoresist filmAPPLIED MATERIALS INC·Filed 1999·Granted May 29, 2001·11 cites·17 claims
- 2737US2003211244A1Reacting an organosilicon compound with an oxidizing gas to form an ultra low k dielectricAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →