Inventor · disambiguated record
Dmytro Apalkov
Also filed as: APALKOV DMYTRO
80 granted patents·12 pending applications·773 citations·filing 2005–2024
99Inventor score
Files withSAMSUNG ELECTRONICS CO LTD58APALKOV DMYTRO18GRANDIS INC6KHVALKOVSKIY ALEXEY VASILYEVITCH2KROUNBI MOHAMAD TOWFIK2
Top patents by PatentIndex Score
92 records- 0199US7518835B2Magnetic elements having a bias field and magnetic memory devices using the magnetic elementsGRANDIS INC·Filed 2005·Granted Apr 14, 2009·128 cites·23 claims
- 0299US7486552B2Method and system for providing a spin transfer device with improved switching characteristicsGRANDIS INC·Filed 2007·Granted Feb 3, 2009·185 cites·52 claims
- 0398USRE49797EVertical spin orbit torque devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 9, 2024·3 cites·18 claims
- 0498US9608039B1Magnetic junctions programmable using spin-orbit interaction torque in the absence of an external magnetic fieldSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 28, 2017·45 cites·17 claims
- 0598US9130155B2Magnetic junctions having insertion layers and magnetic memories using the magnetic junctionsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 8, 2015·59 cites·31 claims
- 0696US9460397B2Quantum computing device spin transfer torque magnetic memorySAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Oct 4, 2016·28 cites·20 claims
- 0796US9105830B2Method and system for providing dual magnetic tunneling junctions using spin-orbit interaction-based switching and memories utilizing the dual magnetic tunneling junctionsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 11, 2015·21 cites·30 claims
- 0896US9076537B2Method and system for providing a magnetic tunneling junction using spin-orbit interaction based switching and memories utilizing the magnetic tunneling junctionKHVALKOVSKIY ALEXEY VASILYEVITCH·Filed 2012·Granted Jul 7, 2015·50 cites·43 claims
- 0994US10381550B1Method and system for engineering the secondary barrier layer in dual magnetic junctionsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 13, 2019·8 cites·18 claims
- 1091US9076954B2Method and system for providing magnetic memories switchable using spin accumulation and selectable using magnetoelectric devicesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 7, 2015·15 cites·19 claims
- 1190US9966901B2Spin-torque oscillator based on easy-cone anisotropySAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 8, 2018·5 cites·19 claims
- 1289US9490421B2Method and system for providing vertical spin transfer switched magnetic junctions and memories using such junctionsAPALKOV DMYTRO·Filed 2013·Granted Nov 8, 2016·7 cites·48 claims
- 1389US8766383B2Method and system for providing a magnetic junction using half metallic ferromagnetsAPALKOV DMYTRO·Filed 2012·Granted Jul 1, 2014·10 cites·22 claims
- 1489US8422285B2Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memoriesAPALKOV DMYTRO·Filed 2011·Granted Apr 16, 2013·9 cites·10 claims
- 1588US9634241B2Method and system for providing magnetic junctions including Heusler multilayersSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 25, 2017·7 cites·20 claims
- 1688US9384811B2Method and system for providing a thermally assisted spin transfer torque magnetic device including smart thermal barriersSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jul 5, 2016·6 cites·20 claims
- 1788US9029965B2Method and system for providing magnetic junctions having a thermally stable and easy to switch magnetic free layerSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted May 12, 2015·6 cites·20 claims
- 1887US12512137B2Multilayered vertical spin-orbit torque devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 30, 2025·2 cites·20 claims
- 1987US8786039B2Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropyAPALKOV DMYTRO·Filed 2012·Granted Jul 22, 2014·11 cites·40 claims
- 2087US8159866B2Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memoriesAPALKOV DMYTRO·Filed 2009·Granted Apr 17, 2012·16 cites·20 claims
- 2185US9087633B2Magnetic device having a magnetic material in a contact structure coupled to a magnetic element and method of manufacture thereofKHVALKOVSKIY ALEXEY VASILYEVITCH·Filed 2011·Granted Jul 21, 2015·7 cites·26 claims
- 2285US8698259B2Method and system for providing a magnetic tunneling junction using thermally assisted switchingKROUNBI MOHAMAD TOWFIK·Filed 2011·Granted Apr 15, 2014·11 cites·14 claims
- 2385US8456882B2Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memoriesAPALKOV DMYTRO·Filed 2012·Granted Jun 4, 2013·8 cites·16 claims
- 2485US8406045B1Three terminal magnetic elementCHEN EUGENE YOUJUN·Filed 2011·Granted Mar 26, 2013·10 cites·14 claims
- 2584US8399941B2Magnetic junction elements having an easy cone anisotropy and a magnetic memory using such magnetic junction elementsAPALKOV DMYTRO·Filed 2010·Granted Mar 19, 2013·9 cites·31 claims
- 2683US10585630B2Selectorless 3D stackable memorySAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 10, 2020·3 cites·16 claims
- 2783US9287322B2Method for controlling magnetic properties through ion diffusion in a magnetic junction usable in spin transfer torque magnetic random access memory applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Mar 15, 2016·4 cites·23 claims
- 2882US9166152B2Diffusionless transformations in MTJ stacksSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 20, 2015·4 cites·33 claims
- 2982US8704319B2Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memoriesTANG XUETI·Filed 2011·Granted Apr 22, 2014·9 cites·33 claims
- 3082US8374048B2Method and system for providing magnetic tunneling junction elements having a biaxial anisotropyGRANDIS INC·Filed 2010·Granted Feb 12, 2013·4 cites·39 claims
- 3180US7800942B2Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabledGRANDIS INC·Filed 2008·Granted Sep 21, 2010·11 cites·30 claims
- 3278US9076541B2Architecture for magnetic memories including magnetic tunneling junctions using spin-orbit interaction based switchingSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 7, 2015·6 cites·25 claims
- 3377US10885961B2Race-track memory with improved writing schemeSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 5, 2021·3 cites·20 claims
- 3477US9082534B2Magnetic element having perpendicular anisotropy with enhanced efficiencyCHEPULSKYY ROMAN·Filed 2013·Granted Jul 14, 2015·6 cites·22 claims
- 3576US10439133B2Method and system for providing a magnetic junction having a low damping hybrid free layerSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 8, 2019·4 cites·17 claims
- 3674US10121961B2Magnetic devices including magnetic junctions having tilted easy axes and enhanced damping programmable using spin orbit torqueSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 6, 2018·2 cites·18 claims
- 3774US8710602B2Method and system for providing magnetic junctions having improved characteristicsTANG XUETI·Filed 2011·Granted Apr 29, 2014·3 cites·34 claims
- 3872US10305026B2Cross-point architecture for spin-transfer torque magnetoresistive random access memory with spin orbit writingSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 28, 2019·3 cites·12 claims
- 3972US8890267B2Method and system for providing magnetic junctions having a graded magnetic free layerAPALKOV DMYTRO·Filed 2012·Granted Nov 18, 2014·4 cites·44 claims
- 4072US8780665B2Method and system for providing magnetic tunneling junction elements having an easy cone anisotropySAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 15, 2014·2 cites·24 claims
- 4172US8446761B2Method and system for providing multiple logic cells in a single stackAPALKOV DMYTRO·Filed 2011·Granted May 21, 2013·5 cites·23 claims
- 4272US2024237542A1Perpendicular shape anisotropy design with asymmetric composite free layerSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4372US2024234000A1Perpendicular shape anisotropy design with dual spin filteringSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4472US2024237543A1Perpendicular shape anisotropy design with reduced aexSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4571US10411184B1Vertical spin orbit torque devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 10, 2019·2 cites·18 claims
- 4671US9792971B2Method and system for providing magnetic junctions with rare earth-transition metal layersSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 17, 2017·3 cites·19 claims
- 4771US9478730B2Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memoriesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 25, 2016·4 cites·18 claims
- 4871US8723557B2Multi-supply symmetric driver circuit and timing methodONG ADRIAN E·Filed 2011·Granted May 13, 2014·4 cites·10 claims
- 4971US8378438B2Method and system for providing magnetic elements having enhanced magnetic anisotropy and memories using such magnetic elementsGRANDIS INC·Filed 2008·Granted Feb 19, 2013·3 cites·29 claims
- 5067US10205092B2Method and system for providing a diluted free layer magnetic junction usable in spin transfer or spin-orbit torque applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 12, 2019·2 cites·20 claims
Showing the top 50 of 92 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →