Inventor · disambiguated record
Dominique Golanski
Also filed as: GOLANSKI DOMINIQUE
8 granted patents·8 pending applications·4 citations·filing 2001–2025
75Inventor score
Files withST MICROELECTRONICS CROLLES 2 SAS9ST MICROELECTRONICS INT NV3ST MICROELECTRONICS RES & DEV LTD2ST MICROELECTRONICS SA1STMICROELECTRONICS ROUSSET1
Top patents by PatentIndex Score
16 records- 0173US12324251B2Integrated circuit comprising a single photon avalanche diode and corresponding manufacturing methodST MICROELECTRONICS CROLLES 2 SAS·Filed 2024·Granted Jun 3, 2025·0 cites·23 claims
- 0270US12324250B2Single-photon avalanche photodiodeST MICROELECTRONICS CROLLES 2 SAS·Filed 2022·Granted Jun 3, 2025·0 cites·17 claims
- 0369US9786755B2Process for producing, from an SOI and in particular an FDSOI type substrate, transistors having gate oxides of different thicknesses, and corresponding integrated circuitST MICROELECTRONICS CROLLES 2 SAS·Filed 2015·Granted Oct 10, 2017·2 cites·5 claims
- 0466US11581449B2Single-photon avalanche photodiodeST MICROELECTRONICS CROLLES 2 SAS·Filed 2019·Granted Feb 14, 2023·0 cites·20 claims
- 0565US11949035B2Integrated circuit comprising a single photon avalanche diode and corresponding manufacturing methodST MICROELECTRONICS CROLLES 2 SAS·Filed 2021·Granted Apr 2, 2024·0 cites·19 claims
- 0657US12087873B2SPAD photodiodeST MICROELECTRONICS CROLLES 2 SAS·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 0756US2024405146A1Spad photodiodeST MICROELECTRONICS CROLLES 2 SAS·Filed 2024·Application pending·0 cites
- 0855US2025133843A1Single photon avalanche diodeST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 0952US2024014342A1Single photon avalanche diodeST MICROELECTRONICS RES & DEV LTD·Filed 2023·Application pending·0 cites
- 1052US2025275279A1Optoelectronic deviceST MICROELECTRONICS INT NV·Filed 2025·Application pending·0 cites
- 1151US2024014341A1Single photon avalanche diodeST MICROELECTRONICS RES & DEV LTD·Filed 2023·Application pending·0 cites
- 1251US2024204127A1Avalanche photodiodeST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 1339US7015105B2Method of simultaneously making a pair of transistors with insulated gates having respectively a thin oxide and a thick oxide, and corresponding integrated circuit comprising such a pair of transistorsST MICROELECTRONICS SA·Filed 2001·Granted Mar 21, 2006·2 cites·9 claims
- 1437US2018374983A1Method of manufacturing a spad cellST MICROELECTRONICS CROLLES 2 SAS·Filed 2018·Application pending·0 cites
- 1536US2017317106A1Mos transistor structure, in particular for high voltages using a technology of the silicon-on-insulator typeSTMICROELECTRONICS ROUSSET·Filed 2016·Application pending·0 cites
- 1634US9876032B2Method of manufacturing a device with MOS transistorsST MICROELECTRONICS CROLLES 2 SAS·Filed 2016·Granted Jan 23, 2018·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →