Inventor · disambiguated record
Douglas T. Grider
Also filed as: GRIDER DOUGLAS · GRIDER DOUGLAS T · GRIDER DOUGLAS TAD · GRIDER III DOUGLAS TAD
52 granted patents·6 pending applications·1,339 citations·filing 1990–2020
98Inventor score
Files withTEXAS INSTRUMENTS INC41LSI LOGIC CORP4UNIV NORTH CAROLINA STATE4BU HAOWEN2CHAKRAVARTHI SRINIVASAN1
Top patents by PatentIndex Score
58 records- 0197US6136654AMethod of forming thin silicon nitride or silicon oxynitride gate dielectricsTEXAS INSTRUMENTS INC·Filed 1997·Granted Oct 24, 2000·207 cites·21 claims
- 0294US5089872ASelective germanium deposition on silicon and resulting structuresUNIV NORTH CAROLINA STATE·Filed 1990·Granted Feb 18, 1992·135 cites·4 claims
- 0393US5242847ASelective deposition of doped silion-germanium alloy on semiconductor substrateUNIV NORTH CAROLINA STATE·Filed 1992·Granted Sep 7, 1993·159 cites·20 claims
- 0492US6503846B1Temperature spike for uniform nitridization of ultra-thin silicon dioxide layers in transistor gatesTEXAS INSTRUMENTS INC·Filed 2001·Granted Jan 7, 2003·64 cites·13 claims
- 0591US6699763B2Disposable spacer technology for reduced cost CMOS processingTEXAS INSTRUMENTS INC·Filed 2003·Granted Mar 2, 2004·80 cites·6 claims
- 0691US6548366B2Method of two-step annealing of ultra-thin silicon dioxide layers for uniform nitrogen profileTEXAS INSTRUMENTS INC·Filed 2001·Granted Apr 15, 2003·56 cites·16 claims
- 0790US6632747B2Method of ammonia annealing of ultra-thin silicon dioxide layers for uniform nitrogen profileTEXAS INSTRUMENTS INC·Filed 2001·Granted Oct 14, 2003·51 cites·11 claims
- 0887US9343468B1Feed-forward bidirectional implanted split-gate flash memory cellTEXAS INSTRUMENTS INC·Filed 2015·Granted May 17, 2016·5 cites·12 claims
- 0986US6737333B2Semiconductor device isolation structure and method of formingTEXAS INSTRUMENTS INC·Filed 2002·Granted May 18, 2004·39 cites·12 claims
- 1086US6030874ADoped polysilicon to retard boron diffusion into and through thin gate dielectricsTEXAS INSTRUMENTS INC·Filed 1998·Granted Feb 29, 2000·70 cites·5 claims
- 1185US9966380B1Select gate self-aligned patterning in split-gate flash memory cellTEXAS INSTRUMENTS INC·Filed 2016·Granted May 8, 2018·6 cites·20 claims
- 1281US6632718B1Disposable spacer technology for reduced cost CMOS processingTEXAS INSTRUMENTS INC·Filed 1999·Granted Oct 14, 2003·52 cites·14 claims
- 1378US7560792B2Reliable high voltage gate dielectric layers using a dual nitridation processTEXAS INSTRUMENTS INC·Filed 2007·Granted Jul 14, 2009·5 cites·4 claims
- 1478US7226834B2PMD liner nitride films and fabrication methods for improved NMOS performanceTEXAS INSTRUMENTS INC·Filed 2004·Granted Jun 5, 2007·21 cites·22 claims
- 1578US6933248B2Method for transistor gate dielectric layer with uniform nitrogen concentrationTEXAS INSTRUMENTS INC·Filed 2001·Granted Aug 23, 2005·20 cites·12 claims
- 1678US5646073AProcess for selective deposition of polysilicon over single crystal silicon substrate and resulting productLSI LOGIC CORP·Filed 1995·Granted Jul 8, 1997·54 cites·11 claims
- 1778US5336903ASelective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structuresUNIV NORTH CAROLINA STATE·Filed 1993·Granted Aug 9, 1994·55 cites·12 claims
- 1876US5818100AProduct resulting from selective deposition of polysilicon over single crystal silicon substrateLSI LOGIC CORP·Filed 1997·Granted Oct 6, 1998·43 cites·22 claims
- 1973US7847401B2Methods, systems and structures for forming semiconductor structures incorporating high-temperature processing stepsTEXAS INSTRUMENTS INC·Filed 2009·Granted Dec 7, 2010·3 cites·6 claims
- 2073US7670892B2Nitrogen based implants for defect reduction in strained siliconTEXAS INSTRUMENTS INC·Filed 2005·Granted Mar 2, 2010·3 cites·7 claims
- 2172US10553596B2Select gate self-aligned patterning in split-gate flash memory cellTEXAS INSTRUMENTS INC·Filed 2018·Granted Feb 4, 2020·2 cites·19 claims
- 2272US5585286AImplantation of a semiconductor substrate with controlled amount of noble gas ions to reduce channeling and/or diffusion of a boron dopant subsequently implanted into the substrate to form P- LDD region of a PMOS deviceLSI LOGIC CORP·Filed 1995·Granted Dec 17, 1996·39 cites·16 claims
- 2371US8084312B2Nitrogen based implants for defect reduction in strained siliconCHAKRAVARTHI SRINIVASAN·Filed 2010·Granted Dec 27, 2011·3 cites·9 claims
- 2470US6326281B1Integrated circuit isolationTEXAS INSTRUMENTS INC·Filed 1999·Granted Dec 4, 2001·37 cites·3 claims
- 2569US9761581B1Single mask level including a resistor and a through-gate implantTEXAS INSTRUMENTS INC·Filed 2016·Granted Sep 12, 2017·1 cites·12 claims
- 2667US7553718B2Methods, systems and structures for forming semiconductor structures incorporating high-temperature processing stepsTEXAS INSTRUMENTS INC·Filed 2005·Granted Jun 30, 2009·2 cites·12 claims
- 2765US12490427B2Select gate self-aligned patterning in split-gate flash memory cellTEXAS INSTRUMENTS INC·Filed 2020·Granted Dec 2, 2025·0 cites·16 claims
- 2864US8471307B2In-situ carbon doped e-SiGeCB stack for MOS transistorKHAMANKAR RAJESH B·Filed 2009·Granted Jun 25, 2013·4 cites·7 claims
- 2963US11152068B2Integrated circuit including vertical capacitorsTEXAS INSTRUMENTS INC·Filed 2020·Granted Oct 19, 2021·0 cites·21 claims
- 3063US6093659ASelective area halogen doping to achieve dual gate oxide thickness on a waferTEXAS INSTRUMENTS INC·Filed 1998·Granted Jul 25, 2000·28 cites·17 claims
- 3162US7244654B2Drive current improvement from recessed SiGe incorporation close to gateTEXAS INSTRUMENTS INC·Filed 2004·Granted Jul 17, 2007·10 cites·20 claims
- 3261US10622073B2Integrated circuit including vertical capacitorsTEXAS INSTRUMENTS INC·Filed 2018·Granted Apr 14, 2020·1 cites·17 claims
- 3360US11189626B2Partially disposed gate layer into the trenchesTEXAS INSTRUMENTS INC·Filed 2019·Granted Nov 30, 2021·0 cites·18 claims
- 3460US6063670AGate fabrication processes for split-gate transistorsTEXAS INSTRUMENTS INC·Filed 1998·Granted May 16, 2000·21 cites·18 claims
- 3560US2021050445A1Transistors with dual wellsTEXAS INSTRUMENTS INC·Filed 2020·Application pending·0 cites
- 3658US7183165B2Reliable high voltage gate dielectric layers using a dual nitridation processTEXAS INSTRUMENTS INC·Filed 2003·Granted Feb 27, 2007·5 cites·6 claims
- 3757US10446563B1Partially disposed gate layer into the trenchesTEXAS INSTRUMENTS INC·Filed 2018·Granted Oct 15, 2019·0 cites·13 claims
- 3857US5162246ASelective germanium deposition on silicon and resulting structuresUNIV NORTH CAROLINA STATE·Filed 1991·Granted Nov 10, 1992·29 cites·26 claims
- 3955US10811534B2Transistors with dual wellsTEXAS INSTRUMENTS INC·Filed 2018·Granted Oct 20, 2020·0 cites·18 claims
- 4055US10026730B2Single mask level including a resistor and a through-gate implantTEXAS INSTRUMENTS INC·Filed 2017·Granted Jul 17, 2018·0 cites·19 claims
- 4155US7192894B2High performance CMOS transistors using PMD liner stressTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 20, 2007·5 cites·19 claims
- 4255US6645840B2Multi-layered polysilicon processTEXAS INSTRUMENTS INC·Filed 2001·Granted Nov 11, 2003·7 cites·11 claims
- 4353US6709938B2Source/drain extension fabrication process with direct implantationTEXAS INSTRUMENTS INC·Filed 2002·Granted Mar 23, 2004·4 cites·10 claims
- 4452US9177802B2High tilt angle plus twist drain extension implant for CHC lifetime improvementTEXAS INSTRUMENTS INC·Filed 2013·Granted Nov 3, 2015·0 cites·17 claims
- 4549US8084787B2PMD liner nitride films and fabrication methods for improved NMOS performanceBU HAOWEN·Filed 2007·Granted Dec 27, 2011·0 cites·8 claims
- 4648US9461060B1Feed-forward bidirectional implanted split-gate flash memory cellTEXAS INSTRUMENTS INC·Filed 2016·Granted Oct 4, 2016·0 cites·8 claims
- 4747US9431248B2High tilt angle plus twist drain extension implant for CHC lifetime improvementTEXAS INSTRUMENTS INC·Filed 2015·Granted Aug 30, 2016·0 cites·9 claims
- 4846US9318337B2Three dimensional three semiconductor high-voltage capacitorsTEXAS INSTRUMENTS INC·Filed 2014·Granted Apr 19, 2016·0 cites·16 claims
- 4945US8809141B2High performance CMOS transistors using PMD liner stressBU HAOWEN·Filed 2007·Granted Aug 19, 2014·0 cites·5 claims
- 5044US6737354B2Method of CMOS source/drain extension with the PMOS implant spaced by poly oxide and cap oxide from the gatesTEXAS INSTRUMENTS INC·Filed 2002·Granted May 18, 2004·2 cites·2 claims
Showing the top 50 of 58 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →