Inventor · disambiguated record
Donghun Kang
Also filed as: KANG DONGHUN
19 granted patents·16 pending applications·46 citations·filing 2010–2025
91Inventor score
Top patents by PatentIndex Score
35 records- 0190US8810816B2Electronic document having a component of an integrated display and a component of an electronic circuit formed on a common substrate and a method of manufacture thereofFISCHER JOERG·Filed 2010·Granted Aug 19, 2014·24 cites·13 claims
- 0286US2025056825A1Method for making nanostructure transistors with offset source/drain dopant blocking structures including a superlatticeATOMERA INC·Filed 2024·Application pending·0 cites
- 0386US2025056824A1Method for making nanostructure transistors with flush source/drain dopant blocking structures including a superlatticeATOMERA INC·Filed 2024·Application pending·0 cites
- 0485US12230694B2Method for making nanostructure transistors with source/drain trench contact linersATOMERA INC·Filed 2024·Granted Feb 18, 2025·0 cites·16 claims
- 0585US12142669B2Method for making nanostructure transistors with flush source/drain dopant blocking structures including a superlatticeATOMERA INC·Filed 2024·Granted Nov 12, 2024·0 cites·20 claims
- 0685US12142662B2Method for making nanostructure transistors with offset source/drain dopant blocking structures including a superlatticeATOMERA INC·Filed 2024·Granted Nov 12, 2024·0 cites·20 claims
- 0784US9754945B2Non-volatile memory device employing a deep trench capacitorGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 5, 2017·4 cites·10 claims
- 0877US9997348B2Wafer stress control and topography compensationIBM·Filed 2016·Granted Jun 12, 2018·2 cites·20 claims
- 0977US2025151309A1Method for making nanostructure transistors with source/drain trench contact linersATOMERA INC·Filed 2025·Application pending·0 cites
- 1076US10020202B2Fabrication of multi threshold-voltage devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 10, 2018·2 cites·20 claims
- 1175US8963413B2Device comprising an organic light emitting displayFISCHER JORG·Filed 2010·Granted Feb 24, 2015·4 cites·29 claims
- 1274US2025048729A1Complementary field effect transistor (cfet) devices including superlattice isolation layerATOMERA INC·Filed 2024·Application pending·0 cites
- 1374US2025048718A1Method for making complementary field effect transistor (cfet) devices including superlattice isolation layerATOMERA INC·Filed 2024·Application pending·0 cites
- 1474US2024371883A1Methods for making semiconductor devices including localized semiconductor-on-insulator (soi) regionsATOMERA INC·Filed 2024·Application pending·0 cites
- 1574US2024371943A1Semiconductor devices including localized semiconductor-on-insulator (soi) regionsATOMERA INC·Filed 2024·Application pending·0 cites
- 1673US9870960B2Capacitance monitoring using X-ray diffractionIBM·Filed 2014·Granted Jan 16, 2018·2 cites·20 claims
- 1770US2025248090A1Method for making semiconductor device including superlattice source/drainATOMERA INC·Filed 2025·Application pending·0 cites
- 1870US2025248091A1Semiconductor device including superlattice source/drainATOMERA INC·Filed 2025·Application pending·0 cites
- 1969US2025393462A1Apparatus and method for manufacturing display deviceSAMSUNG DISPLAY CO LTD·Filed 2025·Application pending·0 cites
- 2068US9653534B2Trench metal-insulator-metal capacitor with oxygen gettering layerIBM·Filed 2014·Granted May 16, 2017·1 cites·8 claims
- 2165US9269607B2Wafer stress control with backside patterningGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 23, 2016·1 cites·7 claims
- 2263US10580719B2Semiconductor memory device providing analysis and correcting of soft data fail in stacked chipsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 3, 2020·4 cites·16 claims
- 2363US9960118B2Contact using multilayer linerGLOBALFOUNDRIES INC·Filed 2016·Granted May 1, 2018·1 cites·14 claims
- 2463US2024395977A1Semiconductor light emitting device for pixel and method for manufacturing the sameLG ELECTRONICS INC·Filed 2024·Application pending·0 cites
- 2563US2025125187A1Methods for making semiconductor transistor devices with recessed superlattice over well regionsATOMERA INC·Filed 2024·Application pending·0 cites
- 2658US2025326218A1Method of manufacturing display apparatusSAMSUNG DISPLAY CO LTD·Filed 2025·Application pending·0 cites
- 2756US9911597B2Trench metal insulator metal capacitor with oxygen gettering layerIBM·Filed 2017·Granted Mar 6, 2018·0 cites·14 claims
- 2855US10008421B2Capacitance monitoring using x-ray diffractionIBM·Filed 2017·Granted Jun 26, 2018·0 cites·3 claims
- 2953US10083967B2Non-volatile memory device employing a deep trench capacitorGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 25, 2018·0 cites·8 claims
- 3052USD1092546SDisplay screen or portion thereof with transitional graphical user interfaceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Sep 9, 2025·1 cites·1 claims
- 3152US2023200193A1Electroluminescence displayLG DISPLAY CO LTD·Filed 2022·Application pending·0 cites
- 3251US10483205B2Contact using multilayer linerGLOBALFOUNDRIES INC·Filed 2018·Granted Nov 19, 2019·0 cites·17 claims
- 3348US2024274751A1Red-light-emitting semiconductor light-emitting device and method for manufacturing sameLG ELECTRONICS INC·Filed 2021·Application pending·0 cites
- 3443US2016181249A1Semiconductor structures with deep trench capacitor and methods of manufactureIBM·Filed 2014·Application pending·0 cites
- 3532USD1092547SDisplay screen or portion thereof with graphical user interfaceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Sep 9, 2025·0 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →