Inventor · disambiguated record
Doo-Gon Kim
Also filed as: KIM DOO-GON
22 granted patents·3 pending applications·552 citations·filing 2007–2015
96Inventor score
Top patents by PatentIndex Score
25 records- 0199US8031544B2Semiconductor memory device with three-dimensional array and repair method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 4, 2011·269 cites·25 claims
- 0296US7539041B2Floating body semiconductor memory device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 26, 2009·98 cites·28 claims
- 0393US7843733B2Flash memory devices having three dimensional stack structures and methods of driving sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 30, 2010·29 cites·27 claims
- 0492US7940578B2Flash memory device having row decoders sharing single high voltage level shifter, system including the same, and associated methodsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 10, 2011·30 cites·13 claims
- 0591US7633785B2Semiconductor memory device and method of generating chip enable signal thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 15, 2009·21 cites·38 claims
- 0686US8451643B2Semiconductor memory device rewriting data after execution of multiple read operationsKIM DOO GON·Filed 2010·Granted May 28, 2013·11 cites·16 claims
- 0786US7672166B2Method of programming in a non-volatile memory device and non-volatile memory device for performing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 2, 2010·17 cites·23 claims
- 0885US9903901B2Leakage current detection device and nonvolatile memory device having the sameJEON BYUNG GIL·Filed 2015·Granted Feb 27, 2018·8 cites·19 claims
- 0984US8427872B2Nonvolatile memory device and system performing repair operation for defective memory cellKIM DOO GON·Filed 2011·Granted Apr 23, 2013·10 cites·18 claims
- 1080US7911835B2Programming and reading five bits of data in two non-volatile memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 22, 2011·12 cites·25 claims
- 1179USRE46994EFlash memory devices having three dimensional stack structures and methods of driving sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 14, 2018·4 cites·73 claims
- 1278US7773427B2Non-volatile memory device and method of operatingSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 10, 2010·10 cites·19 claims
- 1371US7649775B2Flash memory device applying erase voltageSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 19, 2010·7 cites·20 claims
- 1470US7957199B2Method of erasing in non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jun 7, 2011·3 cites·24 claims
- 1570US7778085B2Method of erasing in non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 17, 2010·5 cites·24 claims
- 1666US8208335B2Semiconductor memory device and system including the sameLEE DONG-HYUK·Filed 2010·Granted Jun 26, 2012·3 cites·19 claims
- 1765US7848155B2Non-volatile memory system including spare array and method of erasing a block in the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Dec 7, 2010·5 cites·15 claims
- 1860US7609571B2Semiconductor memory device having a control unit receiving a sensing block selection address signal and related methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 27, 2009·4 cites·22 claims
- 1959US7933154B2Non-volatile memory device for reducing layout area of global wordline decoder and operation method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 26, 2011·4 cites·20 claims
- 2051US8767450B2Memory controllers to refresh memory sectors in response to writing signals and memory systems including the sameKIM DOO-GON·Filed 2010·Granted Jul 1, 2014·1 cites·14 claims
- 2146US8144517B2Multilayered nonvolatile memory with adaptive controlKIM DOO GON·Filed 2009·Granted Mar 27, 2012·1 cites·35 claims
- 2244US8315105B2Method of erasing in non-volatile memory deviceKIM DOO-GON·Filed 2011·Granted Nov 20, 2012·0 cites·20 claims
- 2344US2009168482A1Three-dimensional memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2437US2008144370A1Method of programming multi-level cells and non-volatile memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2534US2016018454A1Leakage current detection device, integrated circuit device having the same, and method of detecting leakage current in nonvolatile memory deviceJEON BYUNG-GIL·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →