Inventor · disambiguated record
Dong-Ick Lee
Also filed as: LEE DONG ICK
9 granted patents·1 pending application·97 citations·filing 2011–2025
86Inventor score
Top patents by PatentIndex Score
10 records- 0197US9818836B1Gate cut method for replacement metal gate integrationGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 14, 2017·24 cites·15 claims
- 0296US8643122B2Silicide contacts having different shapes on regions of a semiconductor deviceIBM·Filed 2012·Granted Feb 4, 2014·26 cites·9 claims
- 0396US8415250B2Method of forming silicide contacts of different shapes selectively on regions of a semiconductor deviceALPTEKIN EMRE·Filed 2011·Granted Apr 9, 2013·40 cites·9 claims
- 0483US12327759B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 10, 2025·1 cites·16 claims
- 0576US10283617B1Hybrid spacer integration for field-effect transistorsGLOBALFOUNDRIES INC·Filed 2017·Granted May 7, 2019·2 cites·20 claims
- 0675US10733354B2System and method employing three-dimensional (3D) emulation of in-kerf optical macrosGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 4, 2020·2 cites·20 claims
- 0768US2025273512A1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0865US8241981B1Method of fabricating a deep trench (DT) metal-insulator-metal (MIM) capacitorKRISHNAN RISHIKESH·Filed 2011·Granted Aug 14, 2012·2 cites·17 claims
- 0951US8981565B2Techniques to form uniform and stable silicideLAVOIE CHRISTIAN·Filed 2012·Granted Mar 17, 2015·0 cites·7 claims
- 1050US9373696B2Techniques to form uniform and stable silicideGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 21, 2016·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →