Inventor · disambiguated record
Dong-Kak Lee
Also filed as: LEE DONG-KAK
10 granted patents·3 pending applications·245 citations·filing 2006–2023
86Inventor score
Top patents by PatentIndex Score
13 records- 0198US8354308B2Conductive layer buried-type substrate, method of forming the conductive layer buried-type substrate, and method of fabricating semiconductor device using the conductive layer buried-type substrateSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 15, 2013·230 cites·13 claims
- 0283US9349821B2Electrode structure, method of fabricating the same, and semiconductor device including the electrode structureLEE DONG-KAK·Filed 2015·Granted May 24, 2016·3 cites·14 claims
- 0380US8766355B2Semiconductor trench isolation including polysilicon and nitride layersLEE DONG-KAK·Filed 2011·Granted Jul 1, 2014·8 cites·11 claims
- 0470US12382687B2Semiconductor device including insulating layers and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·16 claims
- 0567US10957647B2Integrated circuit devices including a boron-containing insulating patternSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 23, 2021·1 cites·19 claims
- 0664US8692372B2Semiconductor device having impurity doped polycrystalline layer including impurity diffusion prevention layer and dynamic random memory device including the semiconductor deviceLEE DONG-KAK·Filed 2010·Granted Apr 8, 2014·2 cites·6 claims
- 0763US9202813B2Electrode structure, method of fabricating the same, and semiconductor device including the electrode structureLEE DONG-KAK·Filed 2011·Granted Dec 1, 2015·1 cites·16 claims
- 0861US10685959B2Electrode structure, method of fabricating the same, and semiconductor device including the electrode structureSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 16, 2020·0 cites·20 claims
- 0954US11605714B2Semiconductor device including insulating layers and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 14, 2023·0 cites·18 claims
- 1054US2016247802A1Electrode structure, method of fabricating the same, and semiconductor device including the electrode structureSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
- 1149US2009179252A1Flash memory device including multilayer tunnel insulator and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 1246US7846836B2Method of forming a conductive structure in a semiconductor device and method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Dec 7, 2010·0 cites·17 claims
- 1343US2008073690A1Flash memory device including multilayer tunnel insulator and method of fabricating the sameBAEK SUNG-KWEON·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →