Inventor · disambiguated record
Dong Seup Lee
Also filed as: LEE DONG SEUP
21 granted patents·21 pending applications·18 citations·filing 2015–2025
91Inventor score
Top patents by PatentIndex Score
42 records- 0191US11742390B2Electronic device with gallium nitride transistors and method of making sameTEXAS INSTRUMENTS INC·Filed 2020·Granted Aug 29, 2023·2 cites·20 claims
- 0288US9741557B1Silicon nitride process for reduction of threshold shiftTEXAS INSTRUMENTS INC·Filed 2016·Granted Aug 22, 2017·6 cites·16 claims
- 0387US10014231B1Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devicesTEXAS INSTRUMENTS INC·Filed 2017·Granted Jul 3, 2018·5 cites·11 claims
- 0484US2025063755A1Gallium nitride transistor with a doped regionTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 0583US12166119B2Gallium nitride transistor with a doped regionTEXAS INSTRUMENTS INC·Filed 2023·Granted Dec 10, 2024·0 cites·18 claims
- 0680US12142639B2Electronic device with gallium nitride transistors and method of making sameTEXAS INSTRUMENTS INC·Filed 2023·Granted Nov 12, 2024·0 cites·22 claims
- 0780US10134596B1Recessed solid state apparatusesTEXAS INSTRUMENTS INC·Filed 2017·Granted Nov 20, 2018·2 cites·20 claims
- 0879US2025040208A1Electronic device with gallium nitride transistors and method of making sameTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 0977US11508830B2Transistor with buffer structure having carbon doped profileTEXAS INSTRUMENTS INC·Filed 2020·Granted Nov 22, 2022·1 cites·11 claims
- 1076US11067620B2HEMT wafer probe current collapse screeningTEXAS INSTRUMENTS INC·Filed 2019·Granted Jul 20, 2021·1 cites·20 claims
- 1174US11769824B2Gallium nitride transistor with a doped regionTEXAS INSTRUMENTS INC·Filed 2021·Granted Sep 26, 2023·0 cites·22 claims
- 1272US2024274705A1Normally-on gallium nitride based transistor with p-type gateTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 1370US10192799B2Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devicesTEXAS INSTRUMENTS INC·Filed 2018·Granted Jan 29, 2019·1 cites·20 claims
- 1467US12444600B2Gallium nitride device having a combination of surface passivation layersTEXAS INSTRUMENTS INC·Filed 2021·Granted Oct 14, 2025·0 cites·25 claims
- 1567US2025176253A1Group iii-v ic with different sheet resistance 2-deg resistorsTEXAS INSTRUMENTS INC·Filed 2025·Application pending·0 cites
- 1666US12211835B2Group III-V IC with different sheet resistance 2-DEG resistorsTEXAS INSTRUMENTS INC·Filed 2021·Granted Jan 28, 2025·0 cites·19 claims
- 1763US10964803B2Gallium nitride transistor with a doped regionTEXAS INSTRUMENTS INC·Filed 2018·Granted Mar 30, 2021·0 cites·11 claims
- 1862US11888027B2Monolithic integration of high and low-side GaN FETs with screening back gating effectTEXAS INSTRUMENTS INC·Filed 2021·Granted Jan 30, 2024·0 cites·20 claims
- 1960US11978790B2Normally-on gallium nitride based transistor with p-type gateTEXAS INSTRUMENTS INC·Filed 2020·Granted May 7, 2024·0 cites·24 claims
- 2060US10312095B1Recessed solid state apparatusesTEXAS INSTRUMENTS INC·Filed 2018·Granted Jun 4, 2019·0 cites·20 claims
- 2160US2025311315A1Semiconductor devices with guard ring structuresTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 2258US10707324B2Group IIIA-N HEMT with a tunnel diode in the gate stackTEXAS INSTRUMENTS INC·Filed 2019·Granted Jul 7, 2020·0 cites·21 claims
- 2357US11527619B2Nitride-based semiconductor layer sharing between transistorsTEXAS INSTRUMENTS INC·Filed 2020·Granted Dec 13, 2022·0 cites·20 claims
- 2456US2025220947A1HEMT Device with Unmetallized GateTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 2556US2025006593A1Substrate contact integration in gallium nitride devicesTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 2655US2025040171A1Semiconductor device having a doped region underlying a gate layer and in a barrier layerTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 2755US2024363394A1Integrated circuit with improved isolationTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 2854US2024405017A1Integrated boot diode with high forward bias capabilityTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 2953US10381456B2Group IIIA-N HEMT with a tunnel diode in the gate stackTEXAS INSTRUMENTS INC·Filed 2017·Granted Aug 13, 2019·0 cites·20 claims
- 3053US2024204055A1Screen layer integration in gallium nitride technologyTEXAS INSTRUMENTS INC·Filed 2022·Application pending·0 cites
- 3153US2024322006A1High band-gap devices with self-aligned contactTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 3252US2023411461A1Gan device with extended drain contactTEXAS INSTRUMENTS INC·Filed 2022·Application pending·0 cites
- 3352US2024405078A1Integrated devices with conductive barrier structureTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 3452US2024332369A1Field plates for integrated circuitsTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 3550US10861943B2Transistor with multiple GaN-based alloy layersTEXAS INSTRUMENTS INC·Filed 2018·Granted Dec 8, 2020·0 cites·17 claims
- 3650US2024055488A1High band-gap devices with a doped high band-gap gate electrode extensionTEXAS INSTRUMENTS INC·Filed 2022·Application pending·0 cites
- 3749US2024047529A1Gan devices with modified heterojunction structure and methods of making thereofTEXAS INSTRUMENTS INC·Filed 2022·Application pending·0 cites
- 3847US2023101543A1Gallium-nitride device field-plate systemTEXAS INSTRUMENTS INC·Filed 2021·Application pending·0 cites
- 3947US2022231156A1Drain contact extension layout for hard switching robustnessTEXAS INSTRUMENTS INC·Filed 2021·Application pending·0 cites
- 4046US9711594B2Improving linearity in semiconductor devicesMASSACHUSETTS INST TECHNOLOGY·Filed 2015·Granted Jul 18, 2017·0 cites·25 claims
- 4145US2022130988A1Electronic device with enhancement mode gallium nitride transistor, and method of making sameTEXAS INSTRUMENTS INC·Filed 2020·Application pending·0 cites
- 4240US2023361222A1Resistor structure including charge control layerTEXAS INSTRUMENTS INC·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →