Inventor · disambiguated record
Du-Heon Song
Also filed as: SONG DU-HEON
27 granted patents·4 pending applications·273 citations·filing 1996–2019
96Inventor score
Files withSAMSUNG ELECTRONICS CO LTD21LG SEMICON CO LTD5CHOI YONG-LACK1HYUNDAI ELECTRONICS IND1LEE MYOUNG-BUM1
Top patents by PatentIndex Score
31 records- 0188US7153733B2Method of fabricating fin field effect transistor using isotropic etching techniqueSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 26, 2006·14 cites·11 claims
- 0286US7221023B2Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 22, 2007·11 cites·9 claims
- 0385US7402871B2Semiconductor device having resistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 22, 2008·12 cites·32 claims
- 0484US7524733B2Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 28, 2009·9 cites·11 claims
- 0583US7279774B2Bulk substrates in FinFETs with trench insulation surrounding FIN pairs having FINs separated by recess hole shallower than trenchSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 9, 2007·26 cites·8 claims
- 0683US5686331AFabrication method for semiconductor deviceLG SEMICON CO LTD·Filed 1996·Granted Nov 11, 1997·57 cites·14 claims
- 0780US10529736B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 7, 2020·4 cites·20 claims
- 0878US7491603B2Transistors of semiconductor device having channel region in a channel-portion hole and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 17, 2009·5 cites·16 claims
- 0975US7323746B2Recess gate-type semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 29, 2008·7 cites·16 claims
- 1067US7534708B2Recessed-type field effect transistor with reduced body effectSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 19, 2009·2 cites·20 claims
- 1166US7393769B2Transistor of a semiconductor device having a punchthrough protection layer and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 1, 2008·3 cites·23 claims
- 1266US7205208B2Method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 17, 2007·3 cites·16 claims
- 1366US6861313B2Semiconductor memory device and fabrication method thereof using damascene bitline processSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 1, 2005·13 cites·11 claims
- 1466US6090692AFabrication method for semiconductor memory deviceLG SEMICON CO LTD·Filed 1996·Granted Jul 18, 2000·25 cites·19 claims
- 1566US5942450AMethod of fabricating semiconductor deviceLG SEMICON CO LTD·Filed 1997·Granted Aug 24, 1999·25 cites·10 claims
- 1665US8765572B2Method of fabricating semiconductor deviceCHOI YONG-LACK·Filed 2011·Granted Jul 1, 2014·3 cites·19 claims
- 1764US7429505B2Method of fabricating fin field effect transistor using isotropic etching techniqueSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 30, 2008·2 cites·12 claims
- 1864US6191049B1Method for forming oxide film in semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1998·Granted Feb 20, 2001·28 cites·19 claims
- 1961US10896917B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 19, 2021·0 cites·20 claims
- 2059US7378320B2Method of forming asymmetric MOS transistor with a channel stopping region and a trench-type gateSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 27, 2008·8 cites·11 claims
- 2159US7354827B2Transistor having asymmetric channel region, semiconductor device including the same, and method of fabricating semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 8, 2008·2 cites·7 claims
- 2256US7696570B2Transistors of semiconductor device having channel region in a channel-portion hole and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Apr 13, 2010·0 cites·11 claims
- 2348US2007293011A1Field effect transistor device with channel fin structure and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2446US7300845B2Method of manufacturing recess type MOS transistor having a dual diode impurity layer structureSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 27, 2007·3 cites·39 claims
- 2546US2005173744A1Recessed-type field effect transistor with reduced body effectFiled 2005·Application pending·0 cites
- 2643US7034368B2Semiconductor memory device and fabrication method thereof using damascene gate and epitaxial growthSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 25, 2006·1 cites·18 claims
- 2739US2012007165A1Semiconductor devicesLEE MYOUNG-BUM·Filed 2011·Application pending·0 cites
- 2839US2008029899A1Method of fabricating a semiconductor device and semiconductor device fabricated therebySONG DU-HEON·Filed 2007·Application pending·0 cites
- 2938US6844233B2Semiconductor memory device and fabrication method thereof using damascene gate and epitaxial growthSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jan 18, 2005·0 cites·10 claims
- 3038US5849626AMethod for forming isolation region of semiconductor deviceLG SEMICON CO LTD·Filed 1997·Granted Dec 15, 1998·7 cites·8 claims
- 3133US5895258ASemiconductor device fabrication methodLG SEMICON CO LTD·Filed 1996·Granted Apr 20, 1999·3 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →