Inventor · disambiguated record
Du Zhang
Also filed as: ZHANG DU · ZHANG DU SI
14 granted patents·12 pending applications·5 citations·filing 2020–2025
83Inventor score
Top patents by PatentIndex Score
26 records- 0189US12434880B1Storage boxZHANG DU·Filed 2025·Granted Oct 7, 2025·1 cites·15 claims
- 0286US11024508B2Independent control of etching and passivation gas components for highly selective silicon oxide/silicon nitride etchingTOKYO ELECTRON LTD·Filed 2020·Granted Jun 1, 2021·2 cites·19 claims
- 0383USD1088538SStorage boxZHANG DU·Filed 2025·Granted Aug 19, 2025·2 cites·1 claims
- 0463US12400863B2Method for etching for semiconductor fabricationTOKYO ELECTRON LTD·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
- 0560US12308212B2In-situ adsorbate formation for plasma etch processTOKYO ELECTRON LTD·Filed 2022·Granted May 20, 2025·0 cites·16 claims
- 0660US12237172B2Etch process for oxide of alkaline earth metalTOKYO ELECTRON LTD·Filed 2022·Granted Feb 25, 2025·0 cites·18 claims
- 0760US2025308895A1Selective in-situ carbon-based mask protectionTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 0857US2025188608A1Selective non-plasma deposition of mask protection materialTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 0955US12424447B2Method to selectively etch silicon nitride to silicon oxide using water crystallizationTOKYO ELECTRON LTD·Filed 2022·Granted Sep 23, 2025·0 cites·19 claims
- 1055US12131914B2Selective etching with fluorine, oxygen and noble gas containing plasmasTOKYO ELECTRON LTD·Filed 2021·Granted Oct 29, 2024·0 cites·20 claims
- 1155US11804380B2High-throughput dry etching of films containing silicon-oxygen components or silicon-nitrogen components by proton-mediated catalyst formationTOKYO ELECTRON LTD·Filed 2021·Granted Oct 31, 2023·0 cites·17 claims
- 1255US11538692B2Cyclic plasma etching of carbon-containing materialsTOKYO ELECTRON LTD·Filed 2021·Granted Dec 27, 2022·0 cites·20 claims
- 1354US2024332029A1High aspect ratio contact etching with additive gasTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 1454US2025046603A1Atomic Layer Deposition of Passivation LayerTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 1554US2024420965A1Method of deposition in high aspect ratio (har) featuresTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 1654US2025232981A1High aspect ratio carbon layer etch with improved throughput and process windowTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 1752US2024162043A1Sidewall Inorganic Passivation for Dielectric Etching Via Surface ModificationTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 1852US2024395557A1Systems and methods for semiconductor etchingTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 1951US11189499B2Atomic layer etch (ALE) of tungsten or other metal layersTOKYO ELECTRON LTD·Filed 2020·Granted Nov 30, 2021·0 cites·23 claims
- 2051US2024112919A1Low-Temperature EtchTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 2151US2024112888A1In-Situ Adsorbate Formation for Dielectric EtchTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 2250US11152217B2Highly selective silicon oxide/silicon nitride etching by selective boron nitride or aluminum nitride depositionTOKYO ELECTRON LTD·Filed 2020·Granted Oct 19, 2021·0 cites·20 claims
- 2349US11756306B2Anti-drowning safety alarm method and device for swimming poolHANGZHOU JUYAN XINCHENG TECH CO LTD·Filed 2023·Granted Sep 12, 2023·0 cites·7 claims
- 2449US2022199410A1Conformal amorphous carbon layer etch with side-wall passivationTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
- 2548US11158517B2Selective plasma etching of silicon oxide relative to silicon nitride by gas pulsingTOKYO ELECTRON LTD·Filed 2020·Granted Oct 26, 2021·0 cites·19 claims
- 2645US2021233775A1High-throughput dry etching of silicon oxide and silicon nitride materials by in-situ autocatalyst formationTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →