Inventor · disambiguated record
Ebrahim Abedifard
Also filed as: ABEDIFARD EBRAHIM
128 granted patents·8 pending applications·1,312 citations·filing 2000–2025
99Inventor score
Files withMICRON TECHNOLOGY INC62AVALANCHE TECHNOLOGY INC51ABEDIFARD EBRAHIM11SATOH KIMIHIRO4KESHTBOD PARVIZ2
Top patents by PatentIndex Score
136 records- 0199US8883520B2Redeposition control in MRAM fabrication processSATOH KIMIHIRO·Filed 2012·Granted Nov 11, 2014·72 cites·4 claims
- 0299US8574928B2MRAM fabrication method with sidewall cleaningSATOH KIMIHIRO·Filed 2012·Granted Nov 5, 2013·131 cites·14 claims
- 0398US8792269B1Fast programming of magnetic random access memory (MRAM)AVALANCHE TECHNOLOGY INC·Filed 2013·Granted Jul 29, 2014·61 cites·5 claims
- 0496US7180781B2Memory block erasing in a flash memory deviceMICRON TECHNOLOGY INC·Filed 2005·Granted Feb 20, 2007·41 cites·20 claims
- 0596US6975538B2Memory block erasing in a flash memory deviceMICRON TECHNOLOGY INC·Filed 2003·Granted Dec 13, 2005·89 cites·24 claims
- 0695US10395710B1Magnetic memory emulating dynamic random access memory (DRAM)AVALANCHE TECHNOLOGY INC·Filed 2018·Granted Aug 27, 2019·24 cites·6 claims
- 0795US8796795B2MRAM with sidewall protection and method of fabricationSATOH KIMIHIRO·Filed 2011·Granted Aug 5, 2014·23 cites·9 claims
- 0894US8724380B1Method for reading and writing multi-level cellsAVALANCHE TECHNOLOGY INC·Filed 2013·Granted May 13, 2014·22 cites·21 claims
- 0993US11211107B1Magnetic memory read circuit and calibration method thereforAVALANCHE TECHNOLOGY INC·Filed 2020·Granted Dec 28, 2021·3 cites·23 claims
- 1091US9013045B2MRAM with sidewall protection and method of fabricationAVALANCHE TECHNOLOGY INC·Filed 2014·Granted Apr 21, 2015·11 cites·22 claims
- 1191US8238145B2Shared transistor in a spin-torque transfer magnetic random access memory (STTMRAM) cellABEDIFARD EBRAHIM·Filed 2010·Granted Aug 7, 2012·14 cites·6 claims
- 1291US6304488B1Current limiting negative switch circuitMICRON TECHNOLOGY INC·Filed 2000·Granted Oct 16, 2001·43 cites·52 claims
- 1389US8295083B2Method and apparatus for increasing the reliability of an access transitor coupled to a magnetic tunnel junction (MTJ)ABEDIFARD EBRAHIM·Filed 2010·Granted Oct 23, 2012·9 cites·25 claims
- 1489US6366524B1Address decoding in multiple-bank memory architecturesMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 2, 2002·54 cites·40 claims
- 1589US6275446B1Clock generation circuits and methodsMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 14, 2001·43 cites·53 claims
- 1688US6711056B2Memory with row redundancyMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 23, 2004·40 cites·38 claims
- 1787US6711701B1Write and erase protection in a synchronous memoryMICRON TECHNOLOGY INC·Filed 2000·Granted Mar 23, 2004·36 cites·15 claims
- 1886US8693240B1Method and apparatus for reading a magnetic tunnel junction using a sequence of short pulsesAVALANCHE TECHNOLOGY INC·Filed 2012·Granted Apr 8, 2014·7 cites·12 claims
- 1986US7663925B2Method and apparatus for programming flash memoryMICRON TECHNOLOGY INC·Filed 2006·Granted Feb 16, 2010·15 cites·42 claims
- 2086US6671214B2Methods of operating a multiple bit line column redundancy scheme having primary and redundant local and global bit linesMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 30, 2003·31 cites·10 claims
- 2186US6504768B1Redundancy selection in memory devices with concurrent read and writeMICRON TECHNOLOGY INC·Filed 2000·Granted Jan 7, 2003·42 cites·61 claims
- 2286US6496425B1Multiple bit line column redundancyMICRON TECHNOLOGY INC·Filed 2000·Granted Dec 17, 2002·32 cites·40 claims
- 2386US6445625B1Memory device redundancy selection having test inputsMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 3, 2002·36 cites·38 claims
- 2485US8363460B2Method and apparatus for programming a magnetic tunnel junction (MTJ)AVALANCHE TECHNOLOGY INC·Filed 2010·Granted Jan 29, 2013·7 cites·13 claims
- 2584US9728240B2Pulse programming techniques for voltage-controlled magnetoresistive tunnel junction (MTJ)AVALANCHE TECHNOLOGY INC·Filed 2014·Granted Aug 8, 2017·8 cites·8 claims
- 2684US8289757B2Embedded magnetic random access memory (MRAM)KESHTBOD PARVIZ·Filed 2010·Granted Oct 16, 2012·5 cites·8 claims
- 2783US7751242B2NAND memory device and programming methodsMICRON TECHNOLOGY INC·Filed 2005·Granted Jul 6, 2010·11 cites·6 claims
- 2883US7176077B2Methods of forming memory cells and arrays having underlying source-line connectionsMICRON TECHNOLOGY INC·Filed 2005·Granted Feb 13, 2007·5 cites·20 claims
- 2982US8477529B2Embedded magnetic random access memory (MRAM)KESHTBOD PARVIZ·Filed 2012·Granted Jul 2, 2013·4 cites·9 claims
- 3082US6665221B2Multiple bit line column redundancy with primary local and global bit lines and redundant local and global bit linesMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 16, 2003·25 cites·16 claims
- 3181US9793003B2Programming of non-volatile memory subjected to high temperature exposureAVALANCHE TECHNOLOGY INC·Filed 2016·Granted Oct 17, 2017·5 cites·13 claims
- 3281US8953396B2NAND interfaceABEDIFARD EBRAHIM·Filed 2011·Granted Feb 10, 2015·6 cites·27 claims
- 3381US8148174B1Magnetic tunnel junction (MTJ) formation with two-step processABEDIFARD EBRAHIM·Filed 2011·Granted Apr 3, 2012·5 cites·20 claims
- 3481US6721206B2Methods of accessing floating-gate memory cells having underlying source-line connectionsMICRON TECHNOLOGY INC·Filed 2003·Granted Apr 13, 2004·14 cites·23 claims
- 3580US7974129B2Method and apparatus for programming flash memoryMICRON TECHNOLOGY INC·Filed 2010·Granted Jul 5, 2011·6 cites·18 claims
- 3680US6774426B2Flash cell with trench source-line connectionMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 10, 2004·13 cites·59 claims
- 3779US8891326B1Method of sensing data in magnetic random access memory with overlap of high and low resistance distributionsAVALANCHE TECHNOLOGY INC·Filed 2013·Granted Nov 18, 2014·6 cites·14 claims
- 3879US7903461B2Sensing for memory read and program verify operations in a non-volatile memory deviceMICRON TECHNOLOGY INC·Filed 2008·Granted Mar 8, 2011·9 cites·31 claims
- 3978US9858977B1Programming of magnetic random access memory (MRAM) by boosting gate voltageAVALANCHE TECHNOLOGY INC·Filed 2017·Granted Jan 2, 2018·3 cites·13 claims
- 4078US9786344B1Programming of magnetic random access memory (MRAM) by boosting gate voltageAVALANCHE TECHNOLOGY INC·Filed 2017·Granted Oct 10, 2017·3 cites·8 claims
- 4178US9691464B2Fast programming of magnetic random access memory (MRAM)AVALANCHE TECHNOLOGY INC·Filed 2017·Granted Jun 27, 2017·3 cites·7 claims
- 4278US9070692B2Shields for magnetic memory chip packagesAVALANCHE TECHNOLOGY INC·Filed 2013·Granted Jun 30, 2015·5 cites·27 claims
- 4378US8670264B1Multi-port magnetic random access memory (MRAM)ABEDIFARD EBRAHIM·Filed 2012·Granted Mar 11, 2014·5 cites·7 claims
- 4478US8644060B2Method of sensing data of a magnetic random access memories (MRAM)ABEDIFARD EBRAHIM·Filed 2012·Granted Feb 4, 2014·6 cites·7 claims
- 4578US8611145B2Spin-transfer torque magnetic random access memory (STTMRAM) device with shared transistor and minimal written data disturbanceAVALANCHE TECHNOLOGY INC·Filed 2012·Granted Dec 17, 2013·5 cites·23 claims
- 4677US11289142B2Nonvolatile memory sensing circuit including variable current sourceAVALANCHE TECHNOLOGY INC·Filed 2020·Granted Mar 29, 2022·1 cites·13 claims
- 4777US9558802B2Fast programming of magnetic random access memory (MRAM)AVALANCHE TECHNOLOGY INC·Filed 2016·Granted Jan 31, 2017·3 cites·3 claims
- 4876US8830737B2Method and apparatus for sensing the state of a magnetic tunnel junction (MTJ)AVALANCHE TECHNOLOGY INC·Filed 2012·Granted Sep 9, 2014·5 cites·17 claims
- 4975US8313960B1Magnetic tunnel junction (MTJ) formation using multiple etching processesABEDIFARD EBRAHIM·Filed 2012·Granted Nov 20, 2012·3 cites·17 claims
- 5075US6859392B2Preconditioning global bitlinesMICRON TECHNOLOGY INC·Filed 2002·Granted Feb 22, 2005·17 cites·30 claims
Showing the top 50 of 136 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →