Inventor · disambiguated record
Edward Yi Chang
Also filed as: CHANG EDWARD · CHANG EDWARD Y · CHANG EDWARD YI
35 granted patents·29 pending applications·258 citations·filing 1995–2024
96Inventor score
Files withUNIV NAT CHIAO TUNG18CHANG EDWARD YI15NATIONAL YANG MING CHIAO TUNG UNIV15UNIV NATIONAL CHIAO TUNG5IND TECH RES INST3
Top patents by PatentIndex Score
64 records- 0195US8169002B2High electron mobility transistor and method for fabricating the sameCHANG EDWARD YI·Filed 2010·Granted May 1, 2012·100 cites·20 claims
- 0292US8581638B2High-side driver circuitCHEN TSUNG-LIN·Filed 2012·Granted Nov 12, 2013·17 cites·6 claims
- 0389US11646732B1Power moduleNATIONAL YANG MING CHIAO TUNG UNIV·Filed 2022·Granted May 9, 2023·2 cites·8 claims
- 0487US7420227B2Cu-metalized compound semiconductor deviceUNIV NAT CHIAO TUNG·Filed 2005·Granted Sep 2, 2008·17 cites·9 claims
- 0581US7368822B2Copper metalized ohmic contact electrode of compound deviceUNIV NAT CHIAO TUNG·Filed 2006·Granted May 6, 2008·12 cites·8 claims
- 0677US11387824B1Voltage-controlled varied frequency pulse width modulatorNATIONAL YANG MING CHIAO TUNG UNIV·Filed 2021·Granted Jul 12, 2022·1 cites·13 claims
- 0777US7940143B2Vertical transmission line structure that includes bump elements for flip-chip mountingUNIV NAT CHIAO TUNG·Filed 2008·Granted May 10, 2011·7 cites·18 claims
- 0876US8169276B2Vertical transmission line structure that includes bump elements for flip-chip mountingCHANG EDWARD YI·Filed 2011·Granted May 1, 2012·4 cites·5 claims
- 0975US11271109B2Silicon metal-oxide-semiconductor field effect transistor (Si MOSFET) with a wide-bandgap III-V compound semiconductor group drain and method for fabricating the sameUNIV NATIONAL CHIAO TUNG·Filed 2020·Granted Mar 8, 2022·1 cites·18 claims
- 1073US7847410B2Interconnect of group III-V semiconductor device and fabrication method for making the sameUNIV NAT CHIAO TUNG·Filed 2005·Granted Dec 7, 2010·9 cites·11 claims
- 1172US8536616B2Multilayer substrate having gallium nitride layer and method for forming the sameCHANG EDWARD YI·Filed 2012·Granted Sep 17, 2013·3 cites·4 claims
- 1268US12426344B2Method of manufacturing semiconductor deviceNATIONAL YANG MING CHIAO TUNG UNIV·Filed 2023·Granted Sep 23, 2025·0 cites·8 claims
- 1368US6943068B2Method for fabricating nanometer gate in semiconductor device using thermally reflowed resist technologyUNIV NAT CHIAO TUNG·Filed 2003·Granted Sep 13, 2005·20 cites·11 claims
- 1467US8736349B2Current limit circuit apparatusCHEN TSUNG-LIN·Filed 2012·Granted May 27, 2014·3 cites·7 claims
- 1567US5766967AMethod for fabricating a submicron T-shaped gateIND TECH RES INST·Filed 1996·Granted Jun 16, 1998·35 cites·18 claims
- 1666US8263425B2Multilayer substrate having gallium nitride layer and method for forming the sameCHANG EDWARD YI·Filed 2010·Granted Sep 11, 2012·2 cites·6 claims
- 1765US8735713B2Sun-chasing deviceSIE YOU-LONG·Filed 2012·Granted May 27, 2014·3 cites·7 claims
- 1863US7259084B2Growth of GaAs epitaxial layers on Si substrate by using a novel GeSi buffer layerUNIV NAT CHIAO TUNG·Filed 2003·Granted Aug 21, 2007·9 cites·13 claims
- 1959US12347678B2MOCVD method for growing INALGAN/GAN heterostructureNATIONAL YANG MING CHIAO TUNG UNIV·Filed 2023·Granted Jul 1, 2025·0 cites·9 claims
- 2058US12369375B2Gallium nitride transistorNATIONAL YANG MING CHIAO TUNG UNIV·Filed 2023·Granted Jul 22, 2025·0 cites·17 claims
- 2158US8435875B1Method for forming T-shaped gate structureCHANG EDWARD YI·Filed 2012·Granted May 7, 2013·1 cites·10 claims
- 2257US11670699B2Semiconductor device and method of manufacturing the sameNATIONAL YANG MING CHIAO TUNG UNIV·Filed 2020·Granted Jun 6, 2023·0 cites·9 claims
- 2357US8034654B2Method for forming a GexSi1-x buffer layer of solar-energy battery on a silicon waferUNIV NAT CHIAO TUNG·Filed 2009·Granted Oct 11, 2011·2 cites·2 claims
- 2457US2015128930A1Sun tracking mechanismUNIV NAT CHIAO TUNG·Filed 2014·Application pending·0 cites
- 2556US2025273994A1Wireless charging receiving deviceNATIONAL YANG MING CHIAO TUNG UNIV·Filed 2024·Application pending·0 cites
- 2655US8547712B2Power circuit and direct current to direct current converter thereofCHANG EDWARD-YI·Filed 2011·Granted Oct 1, 2013·1 cites·13 claims
- 2754US12155256B2Fast charging driverNATIONAL YANG MING CHIAO TUNG UNIV·Filed 2022·Granted Nov 26, 2024·0 cites·20 claims
- 2854US12088114B2Inductive resonant wireless charging system, resonant wireless charging transmitting device, wireless charging relay device and inductive wireless charging receiving deviceNATIONAL YANG MING CHIAO TUNG UNIV·Filed 2021·Granted Sep 10, 2024·0 cites·12 claims
- 2954US2024234538A9High electron mobility transistor and method for fabricating the sameNATIONAL YANG MING CHIAO TUNG UNIV·Filed 2023·Application pending·0 cites
- 3053US11342179B2Semiconductor structure having a Si substrate heterointegrated with GaN and method for fabricating the sameUNIV NATIONAL CHIAO TUNG·Filed 2020·Granted May 24, 2022·0 cites·8 claims
- 3153US2025072025A1High electron mobility transistor and method for manufacturing the sameNATIONAL YANG MING CHIAO TUNG UNIV·Filed 2023·Application pending·0 cites
- 3252US2025253776A1Bidirectional voltage conversion deviceNATIONAL YANG MING CHIAO TUNG UNIV·Filed 2024·Application pending·0 cites
- 3350US12495569B2High electron mobility transistorNATIONAL YANG MING CHIAO TUNG UNIV·Filed 2023·Granted Dec 9, 2025·0 cites·10 claims
- 3450US8033039B2High frequency flip chip package process of polymer substrate and structure thereofUNIV NAT CHIAO TUNG·Filed 2009·Granted Oct 11, 2011·0 cites·7 claims
- 3549US2007134901A1Growth of GaAs expitaxial layers on Si substrate by using a novel GeSi buffer layerUNIV NAT CHIAO TUNG·Filed 2007·Application pending·0 cites
- 3646US8519488B2III-V metal-oxide-semiconductor deviceUNIV NAT CHIAO TUNG·Filed 2013·Granted Aug 27, 2013·0 cites·2 claims
- 3746US8258606B2High frequency flip chip package structure of polymer substrateCHANG EDWARD-YI·Filed 2011·Granted Sep 4, 2012·0 cites·5 claims
- 3846US2023093515A1Synchronous buck converter using a single gate drive controlNATIONAL YANG MING CHIAO TUNG UNIV·Filed 2021·Application pending·0 cites
- 3946US2020373153A1SEMICONDUCTOR STRUCTURE HAVING A Si SUBSTRATE HETEROINTEGRATED WITH GaN AND METHOD FOR FABRICATING THE SAMEUNIV NATIONAL CHIAO TUNG·Filed 2019·Application pending·0 cites
- 4045US11569696B2Control method of a minimum power inputNATIONAL YANG MING CHIAO TUNG UNIV·Filed 2021·Granted Jan 31, 2023·0 cites·9 claims
- 4144US2012238064A1Enhancement-mode high-electron-mobility transistor and the manufacturing method thereofCHANG EDWARD YI·Filed 2012·Application pending·0 cites
- 4244US2012305991A1Device having series-connected high electron mobility transistors and manufacturing method thereofCHANG EDWARD YI·Filed 2012·Application pending·0 cites
- 4343US11322398B2Process for making interconnect of group III-V semiconductor device, and group III-V semiconductor device including interconnect made therebyUNIV NATIONAL CHIAO TUNG·Filed 2019·Granted May 3, 2022·0 cites·15 claims
- 4443US5744734AFabrication process for high temperature aluminum alloys by squeeze castingIND TECH RES INST·Filed 1995·Granted Apr 28, 1998·9 cites·20 claims
- 4541US2022374676A1Computing method and computing system for transformer modelHTC CORP·Filed 2022·Application pending·0 cites
- 4641US2012098037A1Device having series-connected high electron mobility transistors and manufacturing method thereofCHANG EDWARD YI·Filed 2010·Application pending·0 cites
- 4741US2012025270A1Enhancement-mode high-electron-mobility transistor and the manufacturing method thereofCHANG EDWARD YI·Filed 2010·Application pending·0 cites
- 4841US2007066051A1Method for forming gate pattern for electronic deviceUNIV NAT CHIAO TUNG·Filed 2005·Application pending·0 cites
- 4940US2009194846A1Fully Cu-metallized III-V group compound semiconductor device with palladium/germanium/copper ohmic contact systemCHANG EDWARD YI·Filed 2008·Application pending·0 cites
- 5037US2005194545A1[adjustable collimator and sputtering apparatus with the same]Filed 2004·Application pending·0 cites
Showing the top 50 of 64 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →