Inventor · disambiguated record
Edoardo Zanetti
Also filed as: ZANETTI EDOARDO
12 granted patents·13 pending applications·6 citations·filing 2009–2025
84Inventor score
Top patents by PatentIndex Score
25 records- 0191US11798981B24H—SiC electronic device with improved short-circuit performances, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2021·Granted Oct 24, 2023·2 cites·18 claims
- 0282US12308235B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2023·Granted May 20, 2025·0 cites·17 claims
- 0378US11854809B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2022·Granted Dec 26, 2023·0 cites·18 claims
- 0478US2025151322A1Mosfet device with shielding region and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2024·Application pending·0 cites
- 0576US11018008B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2018·Granted May 25, 2021·1 cites·20 claims
- 0674US12342582B24H-SiC electronic device with improved short-circuit performances, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2023·Granted Jun 24, 2025·0 cites·9 claims
- 0773US11251296B2MOSFET device with shielding region and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2019·Granted Feb 15, 2022·1 cites·20 claims
- 0873US2025280573A14h-sic electronic device with improved short-circuit performances, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2025·Application pending·0 cites
- 0971US11545362B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2021·Granted Jan 3, 2023·0 cites·20 claims
- 1069US12148824B2MOSFET device with shielding region and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2022·Granted Nov 19, 2024·0 cites·19 claims
- 1167US2022344467A14h-sic mosfet device and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2022·Application pending·0 cites
- 1264US8344449B2Manufacturing process of a power electronic device integrated in a semiconductor substrate with wide band gap and electronic device thus obtainedST MICROELECTRONICS SRL·Filed 2009·Granted Jan 1, 2013·2 cites·26 claims
- 1360US11329131B24H-SiC MOSFET device and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2020·Granted May 10, 2022·0 cites·10 claims
- 1458US2024297249A1Electronic device with auto aligned csl and edge termination structure, and manufacturing method thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 1558US2025234587A1Self-aligned trench bottom protective region for a trench-gate metal-oxide-semiconductor field-effect transistorST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 1657US2024297044A1Process for manufacturing localized ion implants in silicon-carbide power electronic devicesST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 1755US2024071912A1Sic-based electronic device with fuse element for short-circuits protection, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 1853US2025294801A1Power mosfet provided with a variable transparency edge ring formed by a high-depth auto-aligned implantST MICROELECTRONICS INT NV·Filed 2025·Application pending·0 cites
- 1953US2024297043A1Process for manufacturing a power electronic device having a current spreading layerST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 2052US2024079455A1Sic-based electronic device with improved gate dielectric and manufacturing method thereof, diodeST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 2151US12255233B2Silicon carbide vertical conduction MOSFET device for power applications and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2022·Granted Mar 18, 2025·0 cites·20 claims
- 2248US8580640B2Manufacturing process of a power electronic device integrated in a semiconductor substrate with wide band gap and electronic device thus obtainedST MICROELECTRONICS SRL·Filed 2012·Granted Nov 12, 2013·0 cites·19 claims
- 2348US2025203977A1Silicon carbide vertical conduction mosfet device for power applications and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2025·Application pending·0 cites
- 2447US2022246771A1Vertical conduction electronic device comprising a jbs diode and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2022·Application pending·0 cites
- 2547US2022208961A1Silicon carbide mosfet transistor device with improved characteristics and corresponding manufacturing processST MICROELECTRONICS SRL·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →