Inventor · disambiguated record
Effendi Leobandung
Also filed as: LEOBANDUNG EFFENDI
496 granted patents·46 pending applications·3,837 citations·filing 1997–2023
99Inventor score
Top patents by PatentIndex Score
542 records- 0199US10090429B2Integrated on chip detector and zero waveguide module structure for use in DNA sequencingIBM·Filed 2017·Granted Oct 2, 2018·72 cites·18 claims
- 0299US9997413B1Stacked vertical devicesIBM·Filed 2017·Granted Jun 12, 2018·51 cites·11 claims
- 0399US9666748B2Integrated on chip detector and zero waveguide module structure for use in DNA sequencingIBM·Filed 2015·Granted May 30, 2017·74 cites·14 claims
- 0498US10062752B1Fabrication of nanowire vertical gate devicesIBM·Filed 2017·Granted Aug 28, 2018·22 cites·20 claims
- 0598US9779355B1Back propagation gates and storage capacitor for neural networksIBM·Filed 2016·Granted Oct 3, 2017·72 cites·12 claims
- 0698US9450381B1Monolithic integrated photonics with lateral bipolar and BiCMOSIBM·Filed 2015·Granted Sep 20, 2016·29 cites·9 claims
- 0798US9372307B1Monolithically integrated III-V optoelectronics with SI CMOSIBM·Filed 2015·Granted Jun 21, 2016·15 cites·20 claims
- 0898US8994081B2Stacked semiconductor nanowires with tunnel spacersIBM·Filed 2013·Granted Mar 31, 2015·36 cites·10 claims
- 0998US8969149B2Stacked semiconductor nanowires with tunnel spacersIBM·Filed 2013·Granted Mar 3, 2015·39 cites·10 claims
- 1098US8492228B1Field effect transistor devices having thick gate dielectric layers and thin gate dielectric layersLEOBANDUNG EFFENDI·Filed 2012·Granted Jul 23, 2013·80 cites·20 claims
- 1198US8445334B1SOI FinFET with recessed merged Fins and liner for enhanced stress couplingBASKER VEERARAGHAVAN S·Filed 2011·Granted May 21, 2013·41 cites·6 claims
- 1298US7723750B2MOSFET with super-steep retrograded islandIBM·Filed 2007·Granted May 25, 2010·124 cites·15 claims
- 1398US6881635B1Strained silicon NMOS devices with embedded source/drainIBM·Filed 2004·Granted Apr 19, 2005·176 cites·13 claims
- 1498US6483156B1Double planar gated SOI MOSFET structureIBM·Filed 2000·Granted Nov 19, 2002·210 cites·7 claims
- 1598US6069380ASingle-electron floating-gate MOS memoryUNIV MINNESOTA·Filed 1997·Granted May 30, 2000·271 cites·5 claims
- 1697US10217512B1Unit cell with floating gate MOSFET for analog memoryIBM·Filed 2018·Granted Feb 26, 2019·33 cites·18 claims
- 1797US10014372B1Vertical gate-all-around transistor with top and bottom source/drain epitaxy on a replacement nanowire, and method of manufacturing the sameIBM·Filed 2017·Granted Jul 3, 2018·21 cites·20 claims
- 1897US9899397B1Integration of floating gate memory and logic device in replacement gate flowIBM·Filed 2016·Granted Feb 20, 2018·18 cites·19 claims
- 1997US9882047B2Self-aligned replacement metal gate spacerless vertical field effect transistorIBM·Filed 2016·Granted Jan 30, 2018·22 cites·11 claims
- 2097US9653347B1Vertical air gap subtractive etch back end metalIBM·Filed 2016·Granted May 16, 2017·22 cites·9 claims
- 2197US9362444B1Optoelectronics and CMOS integration on GOI substrateIBM·Filed 2015·Granted Jun 7, 2016·18 cites·7 claims
- 2297US8815670B2Preventing Fin erosion and limiting EPI overburden in FinFET structures by composite hardmaskIBM·Filed 2013·Granted Aug 26, 2014·29 cites·13 claims
- 2397US6653698B2Integration of dual workfunction metal gate CMOS devicesIBM·Filed 2001·Granted Nov 25, 2003·145 cites·9 claims
- 2497US6214694B1Process of making densely patterned silicon-on-insulator (SOI) region on a waferIBM·Filed 1998·Granted Apr 10, 2001·244 cites·17 claims
- 2596US10622283B2Self-contained liquid cooled semiconductor packagingIBM·Filed 2018·Granted Apr 14, 2020·13 cites·18 claims
- 2696US10347657B1Semiconductor circuit including nanosheets and fins on the same waferIBM·Filed 2018·Granted Jul 9, 2019·16 cites·19 claims
- 2796US9691709B2Semiconductor device securityIBM·Filed 2015·Granted Jun 27, 2017·12 cites·13 claims
- 2896US9627478B1Integrated vertical nanowire memoryIBM·Filed 2015·Granted Apr 18, 2017·13 cites·15 claims
- 2996US9412840B1Sacrificial layer for replacement metal semiconductor alloy contact formationIBM·Filed 2015·Granted Aug 9, 2016·19 cites·20 claims
- 3096US9391074B1Structure for FinFET finsIBM·Filed 2015·Granted Jul 12, 2016·12 cites·14 claims
- 3196US9368569B1Punch through stopper for semiconductor deviceIBM·Filed 2015·Granted Jun 14, 2016·13 cites·2 claims
- 3296US9331076B2Group III nitride integration with CMOS technologyIBM·Filed 2015·Granted May 3, 2016·11 cites·12 claims
- 3396US8815668B2Preventing FIN erosion and limiting Epi overburden in FinFET structures by composite hardmaskIBM·Filed 2012·Granted Aug 26, 2014·21 cites·20 claims
- 3496US8455313B1Method for fabricating finFET with merged fins and vertical silicideBASKER VEERARAGHAVAN S·Filed 2012·Granted Jun 4, 2013·28 cites·7 claims
- 3596US6991998B2Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transferIBM·Filed 2004·Granted Jan 31, 2006·101 cites·18 claims
- 3695US9735273B1Method of forming a III-V compound semiconductor channel post replacement gateIBM·Filed 2016·Granted Aug 15, 2017·10 cites·14 claims
- 3795US9722022B2Sidewall image transfer nanosheetIBM·Filed 2015·Granted Aug 1, 2017·9 cites·19 claims
- 3895US9508833B1Punch through stopper for semiconductor deviceIBM·Filed 2015·Granted Nov 29, 2016·11 cites·18 claims
- 3995US9455347B1Mandrel removal last in lateral semiconductor growth and structure for sameIBM·Filed 2015·Granted Sep 27, 2016·11 cites·16 claims
- 4095US9330984B1CMOS fin integration on SOI substrateIBM·Filed 2015·Granted May 3, 2016·10 cites·20 claims
- 4195US9257545B2Stacked nanowire device with variable number of nanowire channelsGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 9, 2016·18 cites·13 claims
- 4295US8673729B1finFET eDRAM strap connection structureIBM·Filed 2012·Granted Mar 18, 2014·18 cites·16 claims
- 4395US8586449B1Raised isolation structure self-aligned to fin structuresCHANG JOSEPHINE B·Filed 2012·Granted Nov 19, 2013·23 cites·22 claims
- 4495US7288451B2Method and structure for forming self-aligned, dual stress liner for CMOS devicesIBM·Filed 2005·Granted Oct 30, 2007·32 cites·13 claims
- 4594US11079337B1Secure wafer inspection and identificationIBM·Filed 2020·Granted Aug 3, 2021·3 cites·20 claims
- 4694US10741611B1Resistive processing units with complementary metal-oxide-semiconductor non-volatile analog memoryIBM·Filed 2019·Granted Aug 11, 2020·16 cites·20 claims
- 4794US10658483B2Non-planar field effect transistor devices with wrap-around source/drain contactsIBM·Filed 2019·Granted May 19, 2020·7 cites·20 claims
- 4894US10418493B2Tight pitch stack nanowire isolationIBM·Filed 2017·Granted Sep 17, 2019·7 cites·16 claims
- 4994US10347717B2Fabrication of nanowire vertical gate devicesIBM·Filed 2018·Granted Jul 9, 2019·7 cites·20 claims
- 5094US10134472B1Floating gate architecture for deep neural network applicationIBM·Filed 2017·Granted Nov 20, 2018·16 cites·20 claims
Showing the top 50 of 542 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →