Inventor · disambiguated record
Erich Griebl
Also filed as: GRIEBL ERICH
28 granted patents·5 pending applications·76 citations·filing 2002–2025
94Inventor score
Files withINFINEON TECHNOLOGIES AG19INFINEON TECHNOLOGIES AUSTRIA AG6INFINEON TECH DRESDEN GMBH & CO KG5OTREMBA RALF2INFINEON TECHNOLOGIES AUSTRIA1
Top patents by PatentIndex Score
33 records- 0186US9825023B2Insulated gate bipolar transistor comprising negative temperature coefficient thermistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Nov 21, 2017·6 cites·19 claims
- 0284US9666663B2Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2013·Granted May 30, 2017·5 cites·7 claims
- 0381US8815647B2Chip package and a method for manufacturing a chip packageOTREMBA RALF·Filed 2012·Granted Aug 26, 2014·6 cites·24 claims
- 0480US10304952B2Power semiconductor device with dV/dt controllability and cross-trench arrangementINFINEON TECHNOLOGIES AG·Filed 2018·Granted May 28, 2019·2 cites·31 claims
- 0579US7112868B2IGBT with monolithic integrated antiparallel diodeINFINEON TECHNOLOGIES AG·Filed 2003·Granted Sep 26, 2006·26 cites·9 claims
- 0676US8766430B2Semiconductor modules and methods of formation thereofOTREMBA RALF·Filed 2012·Granted Jul 1, 2014·4 cites·23 claims
- 0770USD609191SPackage for electronic deviceINFINEON TECHNOLOGIES AG·Filed 2008·Granted Feb 2, 2010·17 cites·1 claims
- 0868US11610986B2Power semiconductor switch having a cross-trench structureINFINEON TECHNOLOGIES AG·Filed 2021·Granted Mar 21, 2023·0 cites·16 claims
- 0968US10600862B2High voltage termination structure of a power semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Mar 24, 2020·1 cites·20 claims
- 1065US11888061B2Power semiconductor device having elevated source regions and recessed body regionsINFINEON TECH DRESDEN GMBH & CO KG·Filed 2022·Granted Jan 30, 2024·0 cites·15 claims
- 1165US2020227518A1Semiconductor Device with Stripe-Shaped Cell Trench Structures and Recessed Contacts and Method of Manufacturing ThereofINFINEON TECHNOLOGIES AG·Filed 2020·Application pending·0 cites
- 1265US2022359428A1Method for Processing a Semiconductor Wafer and Semiconductor Composite StructureINFINEON TECHNOLOGIES AG·Filed 2022·Application pending·0 cites
- 1363US11949006B2Power semiconductor device with p-contact and doped insulation blocks defining contact holesINFINEON TECH DRESDEN GMBH & CO KG·Filed 2021·Granted Apr 2, 2024·0 cites·20 claims
- 1462US9224806B2Edge termination structure with trench isolation regionsINFINEON TECHNOLOGIES AG·Filed 2013·Granted Dec 29, 2015·1 cites·19 claims
- 1561US11075290B2Power semiconductor device having a cross-trench arrangementINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jul 27, 2021·0 cites·18 claims
- 1660US10629676B2Semiconductor device with cell trench structures and recessed contacts and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2018·Granted Apr 21, 2020·0 cites·21 claims
- 1759US11515264B2Method for processing a semiconductor wafer, semiconductor composite structure and support structure for semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2019·Granted Nov 29, 2022·0 cites·15 claims
- 1858US11257946B2Method of forming a power semiconductor deviceINFINEON TECH DRESDEN GMBH & CO KG·Filed 2020·Granted Feb 22, 2022·0 cites·17 claims
- 1958US11018051B2Power semiconductor device with reliably verifiable p-contact and methodINFINEON TECH DRESDEN GMBH & CO KG·Filed 2019·Granted May 25, 2021·0 cites·23 claims
- 2058US9385222B2Semiconductor device with insert structure at a rear side and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jul 5, 2016·0 cites·3 claims
- 2158US7821141B2Semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2008·Granted Oct 26, 2010·1 cites·29 claims
- 2257US9997359B2Semiconductor device with rear-side insert structureINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jun 12, 2018·0 cites·7 claims
- 2357US6714397B2Protection configuration for schottky diodeINFINEON TECHNOLOGIES AG·Filed 2002·Granted Mar 30, 2004·7 cites·10 claims
- 2456US9640401B2Method of manufacturing a semiconductor device having a rear-side insert structureINFINEON TECHNOLOGIES AG·Filed 2016·Granted May 2, 2017·0 cites·10 claims
- 2555US2017243969A1Semiconductor Device with Cell Trench Structures and Contacts and Method of Manufacturing a Semiconductor DeviceINFINEON TECHNOLOGIES AG·Filed 2017·Application pending·0 cites
- 2649US2025324628A1Power Semiconductor Device and Method of Producing a Power Semiconductor DeviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2025·Application pending·0 cites
- 2748US2025318252A1Power Semiconductor Device and Method of Producing a Power Semiconductor DeviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2025·Application pending·0 cites
- 2845US9406572B2Method for processing a substrate and a method of process screening for integrated circuitsINFINEON TECHNOLOGIES AG·Filed 2014·Granted Aug 2, 2016·0 cites·19 claims
- 2944US11469317B2Rc igbtINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Oct 11, 2022·0 cites·20 claims
- 3044US11011629B2Power semiconductor switch with improved controllabilityINFINEON TECH DRESDEN GMBH & CO KG·Filed 2019·Granted May 18, 2021·0 cites·22 claims
- 3143US10424645B2Semiconductor device, method for testing a semiconductor device and method for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Sep 24, 2019·0 cites·19 claims
- 3242US9111989B2Insulated gate bipolar transistor including emitter short regionsINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Aug 18, 2015·0 cites·20 claims
- 3341US10177248B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Jan 8, 2019·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →