Inventor · disambiguated record
Erhard Kohn
Also filed as: KOHN ERHARD
19 granted patents·3 pending applications·207 citations·filing 1981–2012
95Inventor score
Files withTELEFUNKEN ELECTRONIC GMBH5THOMSON CSF3GFD GES FUR DIAMANTPRODUKTE MB2MICROGAN GMBH2SIEMENS CORP RES & SUPPORT2
Top patents by PatentIndex Score
22 records- 0184US7981721B2Diamond transistor and method of manufacture thereofDIAMOND MICROWAVE DEVICES LTD·Filed 2006·Granted Jul 19, 2011·14 cites·78 claims
- 0283US8497513B2III-V nitride semiconductor device comprising a diamond layerKOHN ERHARD·Filed 2009·Granted Jul 30, 2013·17 cites·22 claims
- 0375US5393990AHEMT structureSIEMENS CORP RES INC·Filed 1992·Granted Feb 28, 1995·40 cites·10 claims
- 0460US4698654AField effect transistor with a submicron vertical structure and its production processTHOMSON CSF·Filed 1986·Granted Oct 6, 1987·19 cites·6 claims
- 0560US4612560AField effect transistor operating in the enhancement modeTHOMSON CSF·Filed 1984·Granted Sep 16, 1986·15 cites·8 claims
- 0658US4541000AVaractor or mixer diode with surrounding substrate metal contact and top surface isolationTELEFUNKEN ELECTRONIC GMBH·Filed 1981·Granted Sep 10, 1985·15 cites·15 claims
- 0757US7394112B2Heterostructure with rear-face donor dopingMICROGAN GMBH·Filed 2006·Granted Jul 1, 2008·2 cites·23 claims
- 0856US7352008B2Heterostructure with rear-face donor dopingMICROGAN GMBH·Filed 2001·Granted Apr 1, 2008·9 cites·20 claims
- 0950US2012312353A1Semiconductor component having diamond-containing electrodes and use thereofKUSTERER JOACHIM·Filed 2010·Application pending·0 cites
- 1044US4855797AModulation doped high electron mobility transistor with n-i-p-i structureSIEMENS CORP RES & SUPPORT·Filed 1987·Granted Aug 8, 1989·9 cites·19 claims
- 1144US4721985AVariable capacitance element controllable by a D.C. voltageTHOMSON CSF·Filed 1985·Granted Jan 26, 1988·11 cites·11 claims
- 1244US4494132ASemiconductor opto-electronic switchTELEFUNKEN ELECTRONIC GMBH·Filed 1982·Granted Jan 15, 1985·9 cites·11 claims
- 1343US7504658B2Sensor elements with cantilevered bar structures made of semiconductors based on group III-nitrideKUNZE MIKE·Filed 2004·Granted Mar 17, 2009·4 cites·53 claims
- 1443US4438445AVariable capacitance diode and method of making the sameTELEFUNKEN ELECTRONIC GMBH·Filed 1981·Granted Mar 20, 1984·8 cites·17 claims
- 1542US6505914B2Microactuator based on diamondMERCKLE GMBH·Filed 2001·Granted Jan 14, 2003·4 cites·19 claims
- 1638US2012286289A1Semiconductor device and method for manufacturing a semiconductor deviceDIPALO MICHELE·Filed 2012·Application pending·0 cites
- 1737US4916716AVaractor diodeTELEFUNKEN ELECTRONIC GMBH·Filed 1981·Granted Apr 10, 1990·10 cites·15 claims
- 1836US6614095B1Diamond component with rear side contact and a method for the production thereofGFD GES FUR DIAMANTPRODUKTE MB·Filed 1999·Granted Sep 2, 2003·7 cites·21 claims
- 1936US2003109867A1Ablation instrument and method for cutting, fragmenting and/or removing materialGFD GES FUR DIAMANTPRODUKTE MB·Filed 2002·Application pending·0 cites
- 2033US4499651AMethod of manufacturing a field-effect transistorTELEFUNKEN ELECTRONIC GMBH·Filed 1983·Granted Feb 19, 1985·5 cites·20 claims
- 2129US4774555APower hemt structureSIEMENS CORP RES & SUPPORT·Filed 1987·Granted Sep 27, 1988·5 cites·7 claims
- 2228US6037240AGrowth substrate having growth nuclei made of diamonds and/or diamond-like carbon arranged on its growth surface as well as process for a uniform nucleation on the growth substrateDAIMLER CHRYSLER AG·Filed 1998·Granted Mar 14, 2000·4 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →