Inventor · disambiguated record
Erh-Kun Lai
Also filed as: LAI ERH-KUN
236 granted patents·30 pending applications·3,792 citations·filing 2001–2024
99Inventor score
Top patents by PatentIndex Score
266 records- 0199US8426294B23D memory array arranged for FN tunneling program and eraseLUNG HSIANG-LAN·Filed 2012·Granted Apr 23, 2013·165 cites·18 claims
- 0299US8203187B23D memory array arranged for FN tunneling program and eraseLUNG HSIANG-LAN·Filed 2010·Granted Jun 19, 2012·309 cites·24 claims
- 0399US7697316B2Multi-level cell resistance random access memory with metal oxidesMACRONIX INT CO LTD·Filed 2006·Granted Apr 13, 2010·270 cites·25 claims
- 0499US7608848B2Bridge resistance random access memory device with a singular contact structureMACRONIX INT CO LTD·Filed 2006·Granted Oct 27, 2009·282 cites·18 claims
- 0599US7586778B2Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory statesMACRONIX INT CO LTD·Filed 2008·Granted Sep 8, 2009·259 cites·16 claims
- 0698US11871588B2Memory device and method for manufacturing the sameMACRONIX INT CO LTD·Filed 2021·Granted Jan 9, 2024·3 cites·10 claims
- 0798US10141221B1Method for manufacturing three dimensional stacked semiconductor structure and structure manufactured by the sameMACRONIX INT CO LTD·Filed 2017·Granted Nov 27, 2018·37 cites·20 claims
- 0898US10043819B1Method for manufacturing 3D NAND memory using gate replacement, and resulting structuresMACRONIX INT CO LTD·Filed 2017·Granted Aug 7, 2018·40 cites·14 claims
- 0998US9484353B1Memory device and method for fabricating the sameMACRONIX INT CO LTD·Filed 2015·Granted Nov 1, 2016·27 cites·14 claims
- 1098US8437192B23D two bit-per-cell NAND flash memoryLUNG HSIANG-LAN·Filed 2010·Granted May 7, 2013·61 cites·13 claims
- 1198US8089137B2Integrated circuit memory with single crystal silicon on silicide driver and manufacturing methodLUNG HSIANG-LAN·Filed 2009·Granted Jan 3, 2012·124 cites·19 claims
- 1298US8067815B2Aluminum copper oxide based memory devices and methods for manufactureCHIEN WEI-CHIH·Filed 2008·Granted Nov 29, 2011·104 cites·21 claims
- 1398US7450423B2Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structureMACRONIX INT CO LTD·Filed 2007·Granted Nov 11, 2008·278 cites·24 claims
- 1497US10910393B23D NOR memory having vertical source and drain structuresMACRONIX INT CO LTD·Filed 2019·Granted Feb 2, 2021·24 cites·20 claims
- 1597US9455403B1Semiconductor structure and method for manufacturing the sameMACRONIX INT CO LTD·Filed 2015·Granted Sep 27, 2016·22 cites·20 claims
- 1697US9362302B1Source line formation in 3D vertical channel and memoryMACRONIX INT CO LTD·Filed 2015·Granted Jun 7, 2016·30 cites·17 claims
- 1797US7999295B2Stacked thin film transistor, non-volatile memory devices and methods for fabricating the sameMACRONIX INT CO LTD·Filed 2008·Granted Aug 16, 2011·49 cites·18 claims
- 1897US7576386B2Non-volatile memory semiconductor device having an oxide-nitride-oxide (ONO) top dielectric layerMACRONIX INT CO LTD·Filed 2005·Granted Aug 18, 2009·55 cites·16 claims
- 1996US9245925B1RRAM process with metal protection layerMACRONIX INT CO LTD·Filed 2015·Granted Jan 26, 2016·17 cites·20 claims
- 2096US8482052B2Silicon on insulator and thin film transistor bandgap engineered split gate memoryLUE HANG-TING·Filed 2008·Granted Jul 9, 2013·42 cites·22 claims
- 2196US8111541B2Method of a multi-level cell resistance random access memory with metal oxidesLAI ERH-KUN·Filed 2010·Granted Feb 7, 2012·28 cites·18 claims
- 2296US7777215B2Resistive memory structure with buffer layerMACRONIX INT CO LTD·Filed 2008·Granted Aug 17, 2010·57 cites·29 claims
- 2396US7560337B2Programmable resistive RAM and manufacturing methodMACRONIX INT CO LTD·Filed 2006·Granted Jul 14, 2009·47 cites·20 claims
- 2496US7473589B2Stacked thin film transistor, non-volatile memory devices and methods for fabricating the sameMACRONIX INT CO LTD·Filed 2006·Granted Jan 6, 2009·47 cites·47 claims
- 2596US7463530B2Operating method of non-volatile memory deviceMACRONIX INT CO LTD·Filed 2006·Granted Dec 9, 2008·44 cites·18 claims
- 2696US6432778B1Method of forming a system on chip (SOC) with nitride read only memory (NROM)MACRONIX INT CO LTD·Filed 2001·Granted Aug 13, 2002·144 cites·11 claims
- 2795US11069704B23D NOR memory having vertical gate structuresMACRONIX INT CO LTD·Filed 2019·Granted Jul 20, 2021·11 cites·17 claims
- 2895US9559113B2SSL/GSL gate oxide in 3D vertical channel NANDMACRONIX INT CO LTD·Filed 2014·Granted Jan 31, 2017·14 cites·13 claims
- 2995US9461063B1Method for forming a semiconductor structureMACRONIX INT CO LTD·Filed 2015·Granted Oct 4, 2016·22 cites·15 claims
- 3095US9455270B1Semiconductor structure and manufacturing method of the sameMACRONIX INT CO LTD·Filed 2015·Granted Sep 27, 2016·14 cites·20 claims
- 3195US9324731B1Method for fabricating memory deviceMACRONIX INT CO LTD·Filed 2015·Granted Apr 26, 2016·12 cites·11 claims
- 3295US8395935B2Cross-point self-aligned reduced cell size phase change memoryLUNG HSIANG-LAN·Filed 2010·Granted Mar 12, 2013·25 cites·6 claims
- 3395US8310864B2Self-aligned bit line under word line memory arrayLUNG HSIANG-LAN·Filed 2010·Granted Nov 13, 2012·17 cites·30 claims
- 3495US7800094B2Resistance memory with tungsten compound and manufacturingMACRONIX INT CO LTD·Filed 2007·Granted Sep 21, 2010·26 cites·17 claims
- 3594US9748262B1Memory structure and manufacturing method of the sameMACRONIX INT CO LTD·Filed 2016·Granted Aug 29, 2017·17 cites·18 claims
- 3694US8080440B2Resistor random access memory cell with L-shaped electrodeLAI ERH-KUN·Filed 2010·Granted Dec 20, 2011·15 cites·17 claims
- 3794US7923285B2Method for forming self-aligned thermal isolation cell for a variable resistance memory arrayMACRONIX INT CO LTD·Filed 2009·Granted Apr 12, 2011·23 cites·11 claims
- 3894US7709334B2Stacked non-volatile memory device and methods for fabricating the sameMACRONIX INT CO LTD·Filed 2006·Granted May 4, 2010·25 cites·28 claims
- 3993US10636812B1Reducing word line capacitance in 3D memoryMACRONIX INT CO LTD·Filed 2019·Granted Apr 28, 2020·12 cites·20 claims
- 4093US10026750B1Memory device and method for operating the sameMACRONIX INT CO LTD·Filed 2017·Granted Jul 17, 2018·10 cites·17 claims
- 4193US9537093B1Memory structureMACRONIX INT CO LTD·Filed 2016·Granted Jan 3, 2017·15 cites·16 claims
- 4292US11916011B23D virtual ground memory and manufacturing methods for sameMACRONIX INT CO LTD·Filed 2021·Granted Feb 27, 2024·2 cites·23 claims
- 4392US10157963B1Semiconductor device with memory structureMACRONIX INT CO LTD·Filed 2017·Granted Dec 18, 2018·8 cites·13 claims
- 4492US7605079B2Manufacturing method for phase change RAM with electrode layer processMACRONIX INT CO LTD·Filed 2006·Granted Oct 20, 2009·25 cites·25 claims
- 4591US9425391B1Damascene process of RRAM top electrodesMACRONIX INT CO LTD·Filed 2015·Granted Aug 23, 2016·8 cites·12 claims
- 4691US8704205B2Semiconductor structure with improved capacitance of bit lineCHEN SHIH-HUNG·Filed 2012·Granted Apr 22, 2014·13 cites·15 claims
- 4791US7388771B2Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory statesMACRONIX INT CO LTD·Filed 2006·Granted Jun 17, 2008·20 cites·19 claims
- 4890US9431417B1Semiconductor structure and method for manufacturing the sameMACRONIX INT CO LTD·Filed 2015·Granted Aug 30, 2016·7 cites·12 claims
- 4990US8106376B2Method for manufacturing a resistor random access memory with a self-aligned air gap insulatorLAI ERH KUN·Filed 2007·Granted Jan 31, 2012·20 cites·21 claims
- 5090US7816661B2Air cell thermal isolation for a memory array formed of a programmable resistive materialMACRONIX INT CO LTD·Filed 2006·Granted Oct 19, 2010·20 cites·20 claims
Showing the top 50 of 266 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →