Inventor · disambiguated record
F. Scott Johnson
Also filed as: JOHNSON F S · JOHNSON F SCOTT
20 granted patents·5 pending applications·460 citations·filing 1995–2007
95Inventor score
Top patents by PatentIndex Score
25 records- 0196US6441715B1Method of fabricating a miniaturized integrated circuit inductor and transformer fabricationTEXAS INSTRUMENTS INC·Filed 2000·Granted Aug 27, 2002·132 cites·14 claims
- 0286US6030874ADoped polysilicon to retard boron diffusion into and through thin gate dielectricsTEXAS INSTRUMENTS INC·Filed 1998·Granted Feb 29, 2000·70 cites·5 claims
- 0381US6239477B1Self-aligned transistor contact for epitaxial layersTEXAS INSTRUMENTS INC·Filed 1998·Granted May 29, 2001·49 cites·4 claims
- 0472US6248650B1Self-aligned BJT emitter contactTEXAS INSTRUMENTS INC·Filed 1998·Granted Jun 19, 2001·33 cites·9 claims
- 0572US6028345AReduced resistance base contact for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layerTEXAS INSTRUMENTS INC·Filed 1995·Granted Feb 22, 2000·27 cites·9 claims
- 0672US5593905AMethod of forming stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base linkTEXAS INSTRUMENTS INC·Filed 1995·Granted Jan 14, 1997·28 cites·14 claims
- 0768US5592017ASelf-aligned double poly BJT using sige spacers as extrinsic base contactsTEXAS INSTRUMENTS INC·Filed 1995·Granted Jan 7, 1997·28 cites·4 claims
- 0861US6620700B2Silicided undoped polysilicon for capacitor bottom plateTEXAS INSTRUMENTS INC·Filed 2002·Granted Sep 16, 2003·6 cites·5 claims
- 0959US5502330AStacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base linkTEXAS INSTRUMENTS INC·Filed 1995·Granted Mar 26, 1996·16 cites·6 claims
- 1058US6380609B1Silicided undoped polysilicon for capacitor bottom plateTEXAS INSTRUMENTS INC·Filed 2000·Granted Apr 30, 2002·5 cites·12 claims
- 1156US6501152B1Advanced lateral PNP by implant negationTEXAS INSTRUMENTS INC·Filed 1999·Granted Dec 31, 2002·16 cites·5 claims
- 1256US5629556AHigh speed bipolar transistor using a patterned etch stop and diffusion sourceTEXAS INSTRUMENTS INC·Filed 1995·Granted May 13, 1997·14 cites·6 claims
- 1349US6682994B2Methods for transistor gate formation using gate sidewall implantationTEXAS INSTRUMENTS INC·Filed 2002·Granted Jan 27, 2004·3 cites·22 claims
- 1449US5616508AHigh speed bipolar transistor using a patterned etch stop and diffusion sourceTEXAS INSTRUMENTS INC·Filed 1995·Granted Apr 1, 1997·10 cites·14 claims
- 1549US5541121AReduced resistance base contact method for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layerTEXAS INSTRUMENTS INC·Filed 1995·Granted Jul 30, 1996·10 cites·14 claims
- 1648US7098098B2Methods for transistors formation using selective gate implantationTEXAS INSTRUMENTS INC·Filed 2002·Granted Aug 29, 2006·2 cites·6 claims
- 1746US2006270139A1Methods for Transistor Formation Using Selective Gate ImplantationJOHNSON F SCOTT·Filed 2006·Application pending·0 cites
- 1841US7572693B2Methods for transistor formation using selective gate implantationTEXAS INSTRUMENTS INC·Filed 2006·Granted Aug 11, 2009·0 cites·17 claims
- 1941US2008233695A1Integration method of inversion oxide (TOXinv) thickness reduction in CMOS flow without added patternTEXAS INSTRUMENTS INC·Filed 2007·Application pending·0 cites
- 2039US6194280B1Method for forming a self-aligned BJT emitter contactTEXAS INSTRUMENTS INC·Filed 1999·Granted Feb 27, 2001·6 cites·14 claims
- 2138US6281530B1LPNP utilizing base ballast resistorTEXAS INSTRUMENTS INC·Filed 1999·Granted Aug 28, 2001·5 cites·7 claims
- 2235US2006057853A1Thermal oxidation for improved silicide formationMEHROTRA MANOJ·Filed 2004·Application pending·0 cites
- 2334US2002097129A1Method of fabricating a miniaturized integrated circuit inductor and transformer fabricationFiled 2002·Application pending·0 cites
- 2433US2001002061A1Self-aligned in situ doped plug emitterFiled 2000·Application pending·0 cites
- 2524US6645804B1System for fabricating a metal/anti-reflective coating/insulator/metal (MAIM) capacitorTEXAS INSTRUMENTS INC·Filed 2002·Granted Nov 11, 2003·0 cites·20 claims
Join the waitlist — get patent alerts
Get an alert when F. Scott Johnson files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →