Inventor · disambiguated record
Fang Chen
Also filed as: CHEN FANG · CHEN FANG-CHENG
58 granted patents·14 pending applications·966 citations·filing 1998–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD43TAIWAN SEMICONDUCTOR MFG25CHEN JINXIANG1IND TECH RES INST1TSAI WEN-CHI1
Top patents by PatentIndex Score
72 records- 0198US10797031B2Semiconductor packageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 6, 2020·45 cites·20 claims
- 0298US10333623B1Optical transceiverTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 25, 2019·91 cites·20 claims
- 0398US6265317B1Top corner rounding for shallow trench isolationTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jul 24, 2001·249 cites·20 claims
- 0497US10804401B2Structure and method for FinFET device with contact over dielectric gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 13, 2020·5 cites·20 claims
- 0597US10276554B1Integrated standard cell structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·26 cites·20 claims
- 0696US11855072B2Integrated standard cell structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 0796US11527651B2FinFET device with contact over dielectric gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·3 cites·20 claims
- 0896US9972571B1Logic cell structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 15, 2018·14 cites·20 claims
- 0995US10050042B2SRAM cell and logic cell designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 14, 2018·12 cites·20 claims
- 1095US6869868B2Method of fabricating a MOSFET device with metal containing gate structuresTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Mar 22, 2005·134 cites·32 claims
- 1194US10529860B2Structure and method for FinFET device with contact over dielectric gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 7, 2020·8 cites·20 claims
- 1293US10468418B2SRAM cell and logic cell designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·7 cites·20 claims
- 1393US9947657B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 17, 2018·8 cites·21 claims
- 1492US9653594B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 16, 2017·7 cites·20 claims
- 1591US2025344433A1Structure And Method For Finfet Device With Contact Over Dielectric GateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1690US10720436B2SRAM cell and logic cell designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 21, 2020·4 cites·20 claims
- 1789US10269797B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·4 cites·19 claims
- 1888US7511349B2Contact or via hole structure with enlarged bottom critical dimensionTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Mar 31, 2009·17 cites·16 claims
- 1988US6174818B1Method of patterning narrow gate electrodeTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jan 16, 2001·77 cites·15 claims
- 2087US10914895B2Package structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 9, 2021·5 cites·20 claims
- 2187US6867084B1Gate structure and method of forming the gate dielectric with mini-spacerTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Mar 15, 2005·31 cites·22 claims
- 2286US2025294889A1Integrated Standard Cell StructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2385US12324247B2Integrated standard cell structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
- 2485US10770449B2Integrated standard cell structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 8, 2020·2 cites·20 claims
- 2585US9871046B2SRAM circuits with aligned gate electrodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 16, 2018·3 cites·20 claims
- 2685US7122412B2Method of fabricating a necked FINFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Oct 17, 2006·33 cites·24 claims
- 2784US11037934B2SRAM circuits with aligned gate electrodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·2 cites·20 claims
- 2883US11830861B2Semiconductor packageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 28, 2023·1 cites·20 claims
- 2982US12432962B2FinFET device with source/drain contact extending over dielectric gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 30, 2025·0 cites·20 claims
- 3082US12041761B2SRAM circuits with aligned gate electrodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·0 cites·20 claims
- 3182US10332896B2SRAM circuits with aligned gate electrodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 25, 2019·2 cites·20 claims
- 3282US6001538ADamage free passivation layer etching processTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Dec 14, 1999·72 cites·12 claims
- 3381US10515961B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 24, 2019·2 cites·19 claims
- 3479US11980015B2SRAM cell and logic cell designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 7, 2024·0 cites·20 claims
- 3578US9252019B2Semiconductor device and method for forming the sameTSAI WEN-CHI·Filed 2011·Granted Feb 2, 2016·5 cites·20 claims
- 3677US11955425B2Interconnect structure for logic circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 9, 2024·0 cites·20 claims
- 3777US6500727B1Silicon shallow trench etching with round top corner by photoresist-free processTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Dec 31, 2002·25 cites·39 claims
- 3875US11605637B2SRAM circuits with aligned gate electrodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·0 cites·20 claims
- 3974US2023411373A1Semiconductor packageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4072US11508737B2SRAM cell and logic cell designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·20 claims
- 4172US11373993B2Integrated standard cell structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·0 cites·20 claims
- 4271US10651170B2Isolated wells for resistor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 12, 2020·1 cites·20 claims
- 4371US10483204B2Logic cell structure with interconnection design and configurationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·1 cites·20 claims
- 4468US11081563B2Formation of silicide contacts in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 3, 2021·1 cites·20 claims
- 4564US11152249B2Methods of forming FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 19, 2021·0 cites·20 claims
- 4664US11127742B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 21, 2021·0 cites·20 claims
- 4762US11581256B2Interconnect structure for logic circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 14, 2023·0 cites·20 claims
- 4862US11257761B2Logic cell structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 22, 2022·0 cites·20 claims
- 4962US6828237B1Sidewall polymer deposition method for forming a patterned microelectronic layerTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Dec 7, 2004·8 cites·20 claims
- 5061US6051505APlasma etch method for forming metal-fluoropolymer residue free vias through silicon containing dielectric layersTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Apr 18, 2000·31 cites·15 claims
Showing the top 50 of 72 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →