Semiconductor package

Abstract

A semiconductor package includes a first electric integrated circuit component, a second integrated circuit component, and a first plasmonic bridge. The second electric integrated circuit component is aside the first electric integrated circuit component. The first plasmonic bridge is vertically overlapped with both the first electric integrated circuit component and the second electric integrated circuit component. The first plasmonic bridge includes a first plasmonic waveguide optically connecting the first electric integrated circuit component and the second electric integrated circuit component.

What is claimed is: 
     
         1 . A semiconductor package, comprising:
 a first electric integrated circuit component;   a second electric integrated circuit component aside the first electric integrated circuit component; and   a first plasmonic bridge vertically overlapped with both the first electric integrated circuit component and the second electric integrated circuit component, wherein the first plasmonic bridge comprises a first plasmonic waveguide optically connecting the first electric integrated circuit component and the second electric integrated circuit component.   
     
     
         2 . The semiconductor package according to  claim 1 , wherein the first plasmonic bridge further comprises:
 a first electrical-optical conversion module, electrically coupled to the first electric integrated circuit component and optically coupled to the first plasmonic waveguide; and   a second electrical-optical conversion module, electrically coupled to the second electric integrated circuit component and optically coupled to the first plasmonic waveguide.   
     
     
         3 . The semiconductor package according to  claim 2 , wherein the first plasmonic waveguide optically connects the first electric integrated circuit component and the second electric integrated circuit component respectively through the first electrical-optical conversion module and the second electrical-optical conversion module. 
     
     
         4 . The semiconductor package according to  claim 1 , further comprising:
 a substrate underneath the first plasmonic bridge; and   an insulating encapsulant disposed on the substrate, wherein the insulating encapsulant encapsulates the first plasmonic bridge.   
     
     
         5 . The semiconductor package according to  claim 4 , further comprising a plurality of through vias penetrating through the substrate and the insulating encapsulant. 
     
     
         6 . The semiconductor package according to  claim 5 , wherein each of the through vias comprises a through insulating via and a through semiconductor via connected to the through insulating via, the through insulating via penetrates through the insulating encapsulant, and the through semiconductor via penetrates through the substrate. 
     
     
         7 . The semiconductor package according to  claim 4 , further comprising a second plasmonic bridge embedded in the insulating encapsulant, and the second plasmonic bridge is coupled to the second electric circuit component. 
     
     
         8 . The semiconductor package according to  claim 7 , wherein the second plasmonic bridge comprises a third electrical-optical conversion module, a fourth electrical-optical conversion module, and a second plasmonic waveguide extending horizontally between the third electrical-optical conversion module and the fourth electrical-optical conversion module, and both of the third electrical-optical conversion module and the fourth electrical-optical conversion module are electrically connected to the second integrated circuit component and are optically connected to the second plasmonic waveguide. 
     
     
         9 . The semiconductor package according to  claim 4 , further comprising a plurality of conductive terminals on the substrate opposite to the insulating encapsulant. 
     
     
         10 . A semiconductor package, comprising:
 a first electric integrated circuit component;   a second electric integrated circuit component disposed adjacent to the first electric integrated circuit component; and   a first plasmonic bridge comprising a first terminal, a second terminal, and a first plasmonic waveguide optically connecting the first terminal and the second terminal, wherein the first terminal is connected to the first electric integrated circuit component, and the second terminal is connected to the second electric integrated circuit component.   
     
     
         11 . The semiconductor package according to  claim 10 , further comprising:
 a substrate over the first plasmonic bridge; and   an insulating encapsulant filled among the substrate, the first electric integrated circuit component, and the second electric integrated circuit component, wherein the insulating encapsulant encapsulates the first plasmonic bridge.   
     
     
         12 . The semiconductor package according to  claim 11 , further comprising a plurality of through vias penetrating through the substrate and the insulating encapsulant. 
     
     
         13 . The semiconductor package according to  claim 11 , further comprising a second plasmonic bridge embedded in the insulating encapsulant, and the second plasmonic bridge is coupled to the second electric circuit component. 
     
     
         14 . The semiconductor package according to  claim 13 , wherein the second plasmonic bridge comprises a third terminal, a fourth terminal, and a second plasmonic waveguide optically connecting the third terminal and the fourth terminal, and both of the third terminal and the fourth terminal are connected to the second electric integrated circuit component. 
     
     
         15 . The semiconductor package according to  claim 11 , further comprising a plurality of conductive terminals on the substrate opposite to the insulating encapsulant. 
     
     
         16 . A semiconductor package, comprising:
 a substrate;   an insulating encapsulant disposed on the substrate;   a first plasmonic bridge embedded in the insulating encapsulant, wherein the first plasmonic bridge comprises a first electrical-optical conversion module, a second electrical-optical conversion module, and a first plasmonic waveguide optically connecting the first electrical-optical conversion module and the second electrical-optical conversion module;   a first electric integrated circuit component and a second electric integrated circuit component over the insulating encapsulant and the first plasmonic bridge;   a first redistribution structure sandwiched between the first electric integrated circuit component and the insulating encapsulant, wherein the first redistribution structure electrically connects the first electric integrated circuit component and the first electrical-optical conversion module; and   a second redistribution structure sandwiched between the second electric integrated circuit component and the insulating encapsulant, wherein the second redistribution structure electrically connects the second electric integrated circuit component and the second electrical-optical conversion module.   
     
     
         17 . The semiconductor package according to  claim 16 , further comprising a plurality of conductive terminals on the substrate opposite to the insulating encapsulant. 
     
     
         18 . The semiconductor package according to  claim 17 , further comprising a plurality of through vias penetrating through the substrate and the insulating encapsulant to electrically connect the first redistribution structure and the conductive terminals and to electrically connect the second redistribution structure and the conductive terminals. 
     
     
         19 . The semiconductor package according to  claim 16 , further comprising a second plasmonic bridge embedded in the insulating encapsulant, and the second plasmonic bridge is coupled to the second redistribution structure. 
     
     
         20 . The semiconductor package according to  claim 19 , wherein the second plasmonic bridge comprises a third electrical-optical conversion module, a fourth electrical-optical conversion module, and a second plasmonic waveguide optically connecting the third electrical-optical conversion module and the fourth electrical-optical conversion module, and the second redistribution structure electrically connects the second electric integrated circuit component and the third electrical-optical conversion module and electrically connects the second electric integrated circuit component and the fourth electrical-optical conversion module.