Inventor · disambiguated record
Faiz Dahmani
Also filed as: DAHMANI FAIZ
8 granted patents·7 pending applications·69 citations·filing 2007–2020
82Inventor score
Files withDAHMANI FAIZ6COMMISSARIAT ENERGIE ATOMIQUE4ALTIS SEMICONDUCTOR SNC2PINNOW CAY-UWE1QIMONDA AG1
Top patents by PatentIndex Score
15 records- 0194US7682841B2Method of forming integrated circuit having a magnetic tunnel junction deviceQIMONDA AG·Filed 2007·Granted Mar 23, 2010·53 cites·48 claims
- 0285US9722177B2Resistive random access memory device with a solid electrolyte including a region made of a first metal oxide and doped by a second element distinct from the first metalCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Aug 1, 2017·9 cites·10 claims
- 0380US8501525B2Method of fabrication of programmable memory microelectric deviceDAHMANI FAIZ·Filed 2011·Granted Aug 6, 2013·3 cites·16 claims
- 0471US9431607B2Metal-oxide-based conductive-bridging random access memory (CBRAM) having the solid electrolyte doped with a second metalCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Aug 30, 2016·4 cites·11 claims
- 0546US2013270505A1Microelectronic device with programmable memory, including a layer of doped chalcogenide that withstands high temperaturesALTIS SEMICONDUCTOR SNC·Filed 2012·Application pending·0 cites
- 0645US11313030B2Method of forming a thin film of tantalum with low resistivityX FAB FRANCE·Filed 2020·Granted Apr 26, 2022·0 cites·18 claims
- 0745US2012073957A1Use of a process for deposition by sputtering of a chalcogenide layerDAHMANI FAIZ·Filed 2011·Application pending·0 cites
- 0843US11145812B2Resistive random access memory deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Oct 12, 2021·0 cites·8 claims
- 0942US8597975B2Method of fabricating a microelectronic device with programmable memoryDAHMANI FAIZ·Filed 2012·Granted Dec 3, 2013·0 cites·14 claims
- 1041US8268664B2Methods of manufacturing a semiconductor device; method of manufacturing a memory cell; semiconductor device; semiconductor processing device; integrated circuit having a memory cellDAHMANI FAIZ·Filed 2007·Granted Sep 18, 2012·0 cites·44 claims
- 1139US2008272448A1Integrated circuit having a magnetic tunnel junction deviceDAHMANI FAIZ·Filed 2007·Application pending·0 cites
- 1238US2015364680A1Resistive random access memory deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Application pending·0 cites
- 1337US2009103351A1Integrated Circuit, Method of Manufacturing an Integrated Circuit, and Memory ModulePINNOW CAY-UWE·Filed 2007·Application pending·0 cites
- 1434US2014021433A1Microelectronic device with programmable memoryALTIS SEMICONDUCTOR SNC·Filed 2013·Application pending·0 cites
- 1532US2008273375A1Integrated circuit having a magnetic deviceDAHMANI FAIZ·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →