Inventor · disambiguated record
Fang-Yi Liao
Also filed as: Liao fang-yi
8 granted patents·4 pending applications·20 citations·filing 2012–2024
79Inventor score
Top patents by PatentIndex Score
12 records- 0187US8595861B2Thermal probeLIU BERNARD HAOCHIH·Filed 2012·Granted Nov 26, 2013·12 cites·10 claims
- 0283US8578511B2Thermal probeLIU BERNARD HAOCHIH·Filed 2012·Granted Nov 5, 2013·8 cites·10 claims
- 0376US12002719B2Gapfill structure and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·0 cites·20 claims
- 0476US2024274476A1Gapfill structure and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0576US2025126822A1Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0674US2024387279A1Hybrid Fin Structure of Semiconductor Device and Method of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0773US2024371975A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0871US11557518B2Gapfill structure and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 17, 2023·0 cites·20 claims
- 0970US12218221B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 4, 2025·0 cites·20 claims
- 1064US12507433B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 23, 2025·0 cites·20 claims
- 1164US12148672B2Hybrid fin structure of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 19, 2024·0 cites·20 claims
- 1264US12087843B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 10, 2024·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →