Inventor · disambiguated record
Farhad Moghadam
Also filed as: MOGHADAM FARHAD · MOGHADAM FARHAD K
55 granted patents·9 pending applications·5,935 citations·filing 1992–2024
99Inventor score
Top patents by PatentIndex Score
64 records- 0199US7399388B2Sequential gas flow oxide deposition techniqueAPPLIED MATERIALS INC·Filed 2003·Granted Jul 15, 2008·622 cites·28 claims
- 0299US6413583B1Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compoundAPPLIED MATERIALS INC·Filed 1999·Granted Jul 2, 2002·725 cites·6 claims
- 0399US6303523B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1998·Granted Oct 16, 2001·751 cites·53 claims
- 0498US6340435B1Integrated low K dielectrics and etch stopsAPPLIED MATERIALS INC·Filed 1999·Granted Jan 22, 2002·536 cites·14 claims
- 0597US7256139B2Methods and apparatus for e-beam treatment used to fabricate integrated circuit devicesAPPLIED MATERIALS INC·Filed 2005·Granted Aug 14, 2007·46 cites·19 claims
- 0697US6936551B2Methods and apparatus for E-beam treatment used to fabricate integrated circuit devicesAPPLIED MATERIALS INC·Filed 2003·Granted Aug 30, 2005·52 cites·36 claims
- 0797US6858153B2Integrated low K dielectrics and etch stopsAPPLIED MATERIALS INC·Filed 2001·Granted Feb 22, 2005·256 cites·21 claims
- 0897US6593247B1Method of depositing low k films using an oxidizing plasmaAPPLIED MATERIALS INC·Filed 2000·Granted Jul 15, 2003·129 cites·63 claims
- 0997US6583071B1Ultrasonic spray coating of liquid precursor for low K dielectric coatingsAPPLIED MATERIALS INC·Filed 2000·Granted Jun 24, 2003·146 cites·14 claims
- 1097US6562690B1Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2000·Granted May 13, 2003·102 cites·26 claims
- 1197US6448187B2Method of improving moisture resistance of low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2001·Granted Sep 10, 2002·98 cites·30 claims
- 1297US6348725B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1999·Granted Feb 19, 2002·161 cites·38 claims
- 1397US6170428B1Symmetric tunable inductively coupled HDP-CVD reactorAPPLIED MATERIALS INC·Filed 1996·Granted Jan 9, 2001·430 cites·26 claims
- 1496US7081414B2Deposition-selective etch-deposition process for dielectric film gapfillAPPLIED MATERIALS INC·Filed 2003·Granted Jul 25, 2006·98 cites·9 claims
- 1596US6890850B2Method of depositing dielectric materials in damascene applicationsAPPLIED MATERIALS INC·Filed 2002·Granted May 10, 2005·92 cites·27 claims
- 1696US6734115B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2002·Granted May 11, 2004·67 cites·12 claims
- 1796US6660656B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2001·Granted Dec 9, 2003·111 cites·11 claims
- 1896US6596655B1Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2001·Granted Jul 22, 2003·77 cites·20 claims
- 1996US6541282B1Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2000·Granted Apr 1, 2003·80 cites·17 claims
- 2096US6245690B1Method of improving moisture resistance of low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1998·Granted Jun 12, 2001·132 cites·20 claims
- 2195US7560377B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2005·Granted Jul 14, 2009·19 cites·16 claims
- 2295US7514353B2Contact metallization scheme using a barrier layer over a silicide layerAPPLIED MATERIALS INC·Filed 2006·Granted Apr 7, 2009·37 cites·33 claims
- 2394US6706138B2Adjustable dual frequency voltage dividing plasma reactorAPPLIED MATERIALS INC·Filed 2001·Granted Mar 16, 2004·56 cites·12 claims
- 2493US6958112B2Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generationAPPLIED MATERIALS INC·Filed 2003·Granted Oct 25, 2005·77 cites·11 claims
- 2593US6743737B2Method of improving moisture resistance of low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2002·Granted Jun 1, 2004·39 cites·29 claims
- 2693US6669858B2Integrated low k dielectrics and etch stopsAPPLIED MATERIALS INC·Filed 2001·Granted Dec 30, 2003·47 cites·14 claims
- 2792US6869896B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2003·Granted Mar 22, 2005·37 cites·16 claims
- 2891US7381052B2Apparatus and method for heating substratesAPPLIED MATERIALS INC·Filed 2006·Granted Jun 3, 2008·14 cites·7 claims
- 2991US7097886B2Deposition process for high aspect ratio trenchesAPPLIED MATERIALS INC·Filed 2002·Granted Aug 29, 2006·56 cites·19 claims
- 3091US5326723AMethod for improving stability of tungsten chemical vapor depositionINTEL CORP·Filed 1992·Granted Jul 5, 1994·146 cites·10 claims
- 3189US7227244B2Integrated low k dielectrics and etch stopsAPPLIED MATERIALS INC·Filed 2004·Granted Jun 5, 2007·27 cites·8 claims
- 3289US6806207B2Method of depositing low K filmsAPPLIED MATERIALS INC·Filed 2003·Granted Oct 19, 2004·34 cites·20 claims
- 3389US5426076ADielectric deposition and cleaning process for improved gap filling and device planarizationINTEL CORP·Filed 1993·Granted Jun 20, 1995·115 cites·28 claims
- 3488US7151053B2Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applicationsAPPLIED MATERIALS INC·Filed 2005·Granted Dec 19, 2006·8 cites·23 claims
- 3587US6930061B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2003·Granted Aug 16, 2005·32 cites·25 claims
- 3687US6511923B1Deposition of stable dielectric filmsAPPLIED MATERIALS INC·Filed 2000·Granted Jan 28, 2003·42 cites·20 claims
- 3786US6632735B2Method of depositing low dielectric constant carbon doped silicon oxideAPPLIED MATERIALS INC·Filed 2001·Granted Oct 14, 2003·37 cites·13 claims
- 3885US7160821B2Method of depositing low k filmsAPPLIED MATERIALS INC·Filed 2004·Granted Jan 9, 2007·25 cites·20 claims
- 3985US6383954B1Process gas distribution for forming stable fluorine-doped silicate glass and other filmsAPPLIED MATERIALS INC·Filed 1999·Granted May 7, 2002·90 cites·33 claims
- 4079US6926926B2Silicon carbide deposited by high density plasma chemical-vapor deposition with biasAPPLIED MATERIALS INC·Filed 2001·Granted Aug 9, 2005·21 cites·18 claims
- 4177US7799698B2Deposition-selective etch-deposition process for dielectric film gapfillAPPLIED MATERIALS INC·Filed 2006·Granted Sep 21, 2010·4 cites·19 claims
- 4276US6410457B1Method for improving barrier layer adhesion to HDP-FSG thin filmsAPPLIED MATERIALS INC·Filed 2000·Granted Jun 25, 2002·17 cites·24 claims
- 4376US5260236AUV transparent oxynitride deposition in single wafer PECVD systemINTEL CORP·Filed 1992·Granted Nov 9, 1993·63 cites·10 claims
- 4475US7431585B2Apparatus and method for heating substratesAPPLIED MATERIALS INC·Filed 2002·Granted Oct 7, 2008·14 cites·33 claims
- 4575US5872401ADeposition of an inter layer dielectric formed on semiconductor wafer by sub atmospheric CVDINTEL CORP·Filed 1996·Granted Feb 16, 1999·41 cites·19 claims
- 4674US7691753B2Deposition-selective etch-deposition process for dielectric film gapfillAPPLIED MATERIALS INC·Filed 2006·Granted Apr 6, 2010·3 cites·18 claims
- 4771US6521546B1Method of making a fluoro-organosilicate layerAPPLIED MATERIALS INC·Filed 2000·Granted Feb 18, 2003·14 cites·39 claims
- 4871US5883436AContact and via fabrication technologiesINTEL CORP·Filed 1997·Granted Mar 16, 1999·37 cites·14 claims
- 4970US6803325B2Apparatus for improving barrier layer adhesion to HDP-FSG thin filmsAPPLIED MATERIALS INC·Filed 2002·Granted Oct 12, 2004·12 cites·7 claims
- 5064US2025118538A1Remote plasma sourceAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
Showing the top 50 of 64 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →