Inventor · disambiguated record
Faran Nouri
Also filed as: NOURI FARAN
14 granted patents·3 pending applications·380 citations·filing 1992–2011
92Inventor score
Files withAPPLIED MATERIALS INC9PHILIPS SEMICONDUCTORS INC2THIRUPAPULIYUR SUNDERRAJ2ANALOG DEVICES INC1KONINKL PHILIPS ELECTRONICS NV1
Top patents by PatentIndex Score
17 records- 0195US6221735B1Method for eliminating stress induced dislocations in CMOS devicesPHILIPS SEMICONDUCTORS INC·Filed 2000·Granted Apr 24, 2001·255 cites·15 claims
- 0294US7413957B2Methods for forming a transistorAPPLIED MATERIALS INC·Filed 2005·Granted Aug 19, 2008·25 cites·18 claims
- 0382US7795124B2Methods for contact resistance reduction of advanced CMOS devicesAPPLIED MATERIALS INC·Filed 2006·Granted Sep 14, 2010·9 cites·24 claims
- 0478US8105908B2Methods for forming a transistor and modulating channel stressTHIRUPAPULIYUR SUNDERRAJ·Filed 2005·Granted Jan 31, 2012·10 cites·6 claims
- 0572US7569502B2Method of forming a silicon oxynitride layerAPPLIED MATERIALS INC·Filed 2006·Granted Aug 4, 2009·3 cites·5 claims
- 0670US7994015B2NMOS transistor devices and methods for fabricating sameAPPLIED MATERIALS INC·Filed 2010·Granted Aug 9, 2011·2 cites·14 claims
- 0764US6235609B1Method for forming isolation areas with improved isolation oxidePHILIPS ELECTRONICS NA·Filed 2000·Granted May 22, 2001·12 cites·22 claims
- 0858US6251747B1Use of an insulating spacer to prevent threshold voltage roll-off in narrow devicesPHILIPS SEMICONDUCTORS INC·Filed 1999·Granted Jun 26, 2001·23 cites·15 claims
- 0957US7968413B2Methods for forming a transistorAPPLIED MATERIALS INC·Filed 2008·Granted Jun 28, 2011·0 cites·17 claims
- 1057US7833869B2Methods for forming a transistorAPPLIED MATERIALS INC·Filed 2008·Granted Nov 16, 2010·0 cites·18 claims
- 1147US6274445B1Method of manufacturing shallow source/drain junctions in a salicide processPHILIPS SEMI CONDUCTOR INC·Filed 1999·Granted Aug 14, 2001·16 cites·34 claims
- 1246US8330225B2NMOS transistor devices and methods for fabricating sameTHIRUPAPULIYUR SUNDERRAJ·Filed 2011·Granted Dec 11, 2012·0 cites·19 claims
- 1345US5422510AMOS transistor with non-uniform channel dopant profileANALOG DEVICES INC·Filed 1992·Granted Jun 6, 1995·13 cites·2 claims
- 1444US6313011B1Method for suppressing narrow width effects in CMOS technologyKONINKL PHILIPS ELECTRONICS NV·Filed 1999·Granted Nov 6, 2001·12 cites·5 claims
- 1542US2005130448A1Method of forming a silicon oxynitride layerAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 1640US2007284668A1CMOS S/D SiGe DEVICE MADE WITH ALTERNATIVE INTEGRATION PROCESSAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 1740US2007287244A1ALTERNATIVE INTEGRATION SCHEME FOR CMOS S/D SiGe PROCESSAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →