Inventor · disambiguated record
Fabrizio Roccaforte
Also filed as: ROCCAFORTE FABRIZIO
7 granted patents·11 pending applications·8 citations·filing 2005–2025
76Inventor score
Top patents by PatentIndex Score
18 records- 0192US11316025B2Silicon carbide-based electronic device and method of manufacturing the sameST MICROELECTRONICS SRL·Filed 2020·Granted Apr 26, 2022·4 cites·20 claims
- 0283US10566450B2Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2018·Granted Feb 18, 2020·4 cites·20 claims
- 0377US2025393223A1Contextual formation of a junction barrier diode and a schottky diode in a mps device based on silicon carbide, and mps deviceST MICROELECTRONICS SRL·Filed 2025·Application pending·0 cites
- 0473US2025015155A1Silicon carbide-based electronic device and method of manufacturing the sameST MICROELECTRONICS SRL·Filed 2024·Application pending·0 cites
- 0569US11699748B2Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2021·Granted Jul 11, 2023·0 cites·16 claims
- 0666US12426285B2Contextual formation of a junction barrier diode and a Schottky diode in a MPS device based on silicon carbide, and MPS deviceST MICROELECTRONICS SRL·Filed 2022·Granted Sep 23, 2025·0 cites·21 claims
- 0766US12051731B2Silicon carbide-based electronic device and method of manufacturing the sameST MICROELECTRONICS SRL·Filed 2022·Granted Jul 30, 2024·0 cites·20 claims
- 0863US11038047B2Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2020·Granted Jun 15, 2021·0 cites·20 claims
- 0952US2024079455A1Sic-based electronic device with improved gate dielectric and manufacturing method thereof, diodeST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 1051US2023246086A1Wide band gap transistor with nanolaminated insulating gate structure and process for manufacturing a wide band gap transistorST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 1151US2023246100A1Enhancement-mode hemt and manufacturing process of the sameST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 1251US2023246088A1Manufacturing process of an ohmic contact of a hemt device and hemt deviceST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 1349US2025113506A1One-step front ohmic and schottky contact foramtion on sic power devices with laser annealingST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 1448US2023299173A1Forming an electronic device, such as a jbs or mps diode, based on 3c-sic, and 3c-sic electronic deviceST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 1547US2025275161A1Method for regulating the schottky barrier height in a silicon carbide power diode, and power diodeST MICROELECTRONICS INT NV·Filed 2025·Application pending·0 cites
- 1647US2022208961A1Silicon carbide mosfet transistor device with improved characteristics and corresponding manufacturing processST MICROELECTRONICS SRL·Filed 2021·Application pending·0 cites
- 1738US2006183267A1Process for manufacturing a schottky contact on a semiconductor substrateST MICROELECTRONICS SRL·Filed 2005·Application pending·0 cites
- 1834US9711599B2Wide bandgap high-density semiconductor switching device and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2015·Granted Jul 18, 2017·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →