Inventor · disambiguated record
Fen-Ren Chien
Also filed as: CHIEN FEN R · CHIEN FEN-REN
35 granted patents·28 pending applications·787 citations·filing 1997–2014
97Inventor score
Top patents by PatentIndex Score
63 records- 0195US6841804B1Device of white light-emitting diodeFORMOSA EPITAXY INC·Filed 2003·Granted Jan 11, 2005·230 cites·4 claims
- 0293US7307291B2Gallium-nitride based ultraviolet photo detectorFORMOSA EPITAXY INC·Filed 2005·Granted Dec 11, 2007·24 cites·7 claims
- 0393US7173289B1Light emitting diode structure having photonic crystalsFORMOSA EPITAXY INC·Filed 2005·Granted Feb 6, 2007·44 cites·20 claims
- 0493US7148519B2Structure of GaN light-emitting diodeFORMOSA EPITAXY INC·Filed 2005·Granted Dec 12, 2006·24 cites·9 claims
- 0590US6812502B1Flip-chip light-emitting deviceUNI LIGHT TECHNOLOGY INC·Filed 1999·Granted Nov 2, 2004·113 cites·14 claims
- 0689US7589350B2Light-emitting diode chipFORMOSA EPITAXY INC·Filed 2006·Granted Sep 15, 2009·17 cites·12 claims
- 0789US6492661B1Light emitting semiconductor device having reflection layer structureFiled 1999·Granted Dec 10, 2002·148 cites·9 claims
- 0886US7105850B2GaN LED structure with p-type contacting layer grown at low-temperature and having low resistivityFORMOSA EPITAXY INC·Filed 2005·Granted Sep 12, 2006·13 cites·12 claims
- 0984US7049638B2High-brightness gallium-nitride based light emitting diode structureFORMOSA EPITAXY INC·Filed 2005·Granted May 23, 2006·12 cites·8 claims
- 1081US6914264B2Structure and manufacturing method for GaN light emitting diodesFORMOSA EPITAXY INC·Filed 2002·Granted Jul 5, 2005·38 cites·11 claims
- 1180US7374958B2Light emitting semiconductor bonding structure and method of manufacturing the sameFORMOSA EPITAXY INC·Filed 2006·Granted May 20, 2008·8 cites·4 claims
- 1278US7345321B2High-brightness gallium-nitride based light emitting diode structureFORMOSA EPITAXY INC·Filed 2005·Granted Mar 18, 2008·7 cites·24 claims
- 1374US7473939B2Light-emitting diode structure with transparent window covering layer of multiple filmsFORMOSA EPITAXY INC·Filed 2006·Granted Jan 6, 2009·6 cites·17 claims
- 1469US9371975B2Light source deviceFORMOSA EPITAXY INC·Filed 2014·Granted Jun 21, 2016·2 cites·16 claims
- 1569US6979835B1Gallium-nitride based light-emitting diode epitaxial structureFORMOSA EPITAXY INC·Filed 2004·Granted Dec 27, 2005·18 cites·10 claims
- 1669US6753552B1Growth-selective structure of light-emitting diodeFORMOSA EPITAXY INC·Filed 2003·Granted Jun 22, 2004·13 cites·7 claims
- 1768US7042019B1Gallium-nitride based multi-quantum well light-emitting diode n-type contact layer structureFORMOSA EPITAXY INC·Filed 2004·Granted May 9, 2006·12 cites·10 claims
- 1866US9488321B2Illumination device with inclined light emitting element disposed on a transparent substrateFORMOSA EPITAXY INC·Filed 2014·Granted Nov 8, 2016·0 cites·9 claims
- 1964US7442962B2High-brightness gallium-nitride based light emitting diode structureFORMOSA EPITAXY INC·Filed 2005·Granted Oct 28, 2008·2 cites·24 claims
- 2063US7476912B2Multi-directional light scattering LED and manufacturing method thereofFORMOSA EPITAXY INC·Filed 2006·Granted Jan 13, 2009·2 cites·14 claims
- 2163US6967346B2Light emitting diode structure and manufacture method thereofFORMOSA EPITAXY INC·Filed 2003·Granted Nov 22, 2005·12 cites·1 claims
- 2261US8263991B2Light-emitting gallium nitride-based III-V group compound semiconductor device and manufacturing method thereofHUANG KUO-CHIN·Filed 2007·Granted Sep 11, 2012·2 cites·9 claims
- 2356US7180096B2Gallium-nitride based light-emitting diode structure with high reverse withstanding voltage and anti-ESD capabilityFORMOSA EPITAXY INC·Filed 2004·Granted Feb 20, 2007·7 cites·4 claims
- 2456US7180097B2High-brightness gallium-nitride based light emitting diode structureFORMOSA EPITAXY INC·Filed 2004·Granted Feb 20, 2007·7 cites·4 claims
- 2555US7087924B2Gallium-nitride based light emitting diode structure with enhanced light illuminanceFORMOSA EPITAXY INC·Filed 2004·Granted Aug 8, 2006·6 cites·6 claims
- 2655US7033949B2Structure and manufacturing method for nitride-based light-emitting diodesFORMOSA EPITAXY INC·Filed 2003·Granted Apr 25, 2006·6 cites·11 claims
- 2752US9890913B2Illumination device having broad lighting distributionEPISTAR CORP·Filed 2014·Granted Feb 13, 2018·0 cites·12 claims
- 2850US7632693B2Manufacturing method of multi-directional light scattering LEDFORMOSA EPITAXY INC·Filed 2008·Granted Dec 15, 2009·0 cites·2 claims
- 2950US7042018B2Structure of GaN light-emitting diodeFORMOSA EPITAXY INC·Filed 2004·Granted May 9, 2006·2 cites·9 claims
- 3050US2009275156A1Light-emitting gallium nitride-based III-V group compound semiconductor device and manufacturing method thereofHUANG KUO-CHIN·Filed 2009·Application pending·0 cites
- 3150US2007267636A1Gallium-Nitride Based Light-Emitting Diode Structure With High Reverse Withstanding Voltage And Anti-ESD CapabilityWU LIANG-WEN·Filed 2007·Application pending·0 cites
- 3249US7692181B2Gallium-nitride based light emitting diode light emitting layer structureFORMOSA EPITAXY INC·Filed 2006·Granted Apr 6, 2010·0 cites·7 claims
- 3348US2006076574A1Gallium-nitride based light-emitting diodes structure with high reverse withstanding voltage and anti-ESD capabilityWU LIANG-WEN·Filed 2005·Application pending·0 cites
- 3447US7087922B2Light-emitting diode structureFORMOSA EPITAXY INC·Filed 2004·Granted Aug 8, 2006·2 cites·10 claims
- 3547US6248608B1Manufacturing method of a gallium nitride-based blue light emitting diode (LED) ohmic electrodesFORMOSA EPITAXY INC·Filed 2000·Granted Jun 19, 2001·3 cites·15 claims
- 3647US2006163682A1Semiconducting photo detector structurePAN SHYI-MING·Filed 2005·Application pending·0 cites
- 3744US7763902B2Light emitting diode chipFORMOSA EPITAXY INC·Filed 2006·Granted Jul 27, 2010·0 cites·20 claims
- 3844US2007090372A1Light emitting diodeFORMOSA EPITAXY INC·Filed 2006·Application pending·0 cites
- 3942US2007187697A1Nitride based MQW light emitting diode having carrier supply layerWU LIANG-WEN·Filed 2006·Application pending·0 cites
- 4042US2006054897A1Gallium-nitride based light emitting diode light emitting layer structureYU CHENG-TSANG·Filed 2004·Application pending·0 cites
- 4142US2007075346A1Light emitting diode and the package structure thereofHO ZHI-PING·Filed 2006·Application pending·0 cites
- 4242US2007090384A1Nitride based semiconductor device having multiple layer buffer structure and fabrication method thereofWU LIANG-WEN·Filed 2005·Application pending·0 cites
- 4342US2006081859A1Light emitting semiconductor bonding structure and method of manufacturing the samePAN SHYI-MING·Filed 2004·Application pending·0 cites
- 4442US2008079013A1Light emitting diode structureFORMOSA EPITAXY INC·Filed 2006·Application pending·0 cites
- 4540US5767534APassivation capping layer for ohmic contact in II-VI semiconductor light transducing deviceMINNESOTA MINING & MFG·Filed 1997·Granted Jun 16, 1998·7 cites·46 claims
- 4640US2006273333A1Light emitting diode and method of fabricating thereofWU LIANG-WEN·Filed 2005·Application pending·0 cites
- 4740US2007200119A1Flip-chip led package and led chipLI YUN-LI·Filed 2006·Application pending·0 cites
- 4839US2007080352A1Light-emitting diode chipWU LIANG-WEN·Filed 2006·Application pending·0 cites
- 4939US2005082575A1Structure and manufacturing method for GaN light emitting diodesFiled 2004·Application pending·0 cites
- 5039US2006049418A1Epitaxial structure and fabrication method of nitride semiconductor deviceWEN TZI-CHI·Filed 2004·Application pending·0 cites
Showing the top 50 of 63 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →